Tungsten/Platinum schottky barrier Oxide passivated structure very lea
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MSASC100H45H MSASC100H45HR
Tungsten/Platinum schottky barrier Oxide passivated structure very leakage currents Guard ring protection increased reverse energy capability Epitaxial structure minimizes forward voltage drop Hermetically sealed, profile ceramic surface mount power package package inductance Very thermal resistance Available standard polarity (strap-to-anode, MSASC100H45H) reverse polarity (strap-to-cathode: MSASC100H45HR)
Volts Amps
SURFACE MOUNT VOLTAGE DROP SCHOTTKY DIODE
Maximum Ratings 25°C (unless otherwise specified)
DESCRIPTION Peak Repetitive Reverse Voltage Working Peak Reverse Voltage Blocking Voltage Average Rectified Forward Current, 125°C derating, forward current, 125°C Nonrepetitive Peak Surge Current, half-sinewave Peak Repetitive Reverse Surge Current, 1µs, 1kHz Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction Case: MSASC100H45H MSASC100H45HR SYMBOL VRRM VRWM IF(ave) dIF/dT IFSM IRRM Tstg MAX. +150 +150 0.35 UNIT Volts Volts Volts Amps Amps/°C Amps °C/W
Mechanical Outline
Datasheet# MSC0292A
MSASC100H45H MSASC100H45HR
Electrical Parameters
DESCRIPTION Reverse (Leakage) Current Forward Voltage pulse test, SYMBOL IR25 IR125 CONDITIONS Vdc, 25°C Vdc, 100°C 10A, 25°C 20A, 25°C 40A, 25°C 80A, 25°C 100A, 25°C 20A, -55°C 20A, 125°C 25°C -55°C TYP. 2800 4000 3300 UNIT
Junction Capacitance Breakdown Voltage
Datasheet# MSC0292A
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