(1N6820) Volts Amps REVERSE LEAKAGE SCHOTTKY DIODE Features

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(1N6820) Volts Amps REVERSE LEAKAGE SCHOTTKY DIODE Features

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MSASC75W100F
(1N6820)
Volts Amps REVERSE LEAKAGE SCHOTTKY DIODE
Features
Tungsten/Platinum schottky barrier Oxide passivated structure leakage currents Guard ring protection increased reverse energy capability Epitaxial structure minimizes forward voltage drop Hermetically sealed, profile ceramic surface mount power package Very thermal resistance package inductance Available reverse polarity, strap-to-cathode: MSASC75W100FR (1N6820R) TXV-level (MSASC75W100FV) S-level (MSASC75W100FS) screening i.a.w. Microsemi Internal Procedure PS11.50 available
Maximum Ratings 25°C (unless otherwise specified)
DESCRIPTION Peak Repetitive Reverse Voltage Working Peak Reverse Voltage Blocking Voltage Average Rectified Forward Current, 125°C derating, forward current, 125°C Nonrepetitive Peak Surge Current, half-sinewave Peak Repetitive Reverse Surge Current, 1µs, 1kHz Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction Case: MSASC75W100F MSASC75W100FR SYMBOL VRRM VRWM IF(ave) dIF/dT IFSM IRRM Tstg MAX. +175 +175 0.50 0.65 UNIT Volts Volts Volts Amps Amps/°C Amps °C/W
Mechanical Outline
ThinKeyTM4
Datasheet# MSC1031B
MSASC75W100F
(1N6820)
Electrical Parameters
DESCRIPTION Reverse (Leakage) Current Forward Voltage pulse test, SYMBOL IR25 IR125-1 IR125-2 IR125 VF10 VF11 VF12 VF13 VF14 VF15 VF16 CONDITIONS Vdc, 25°C Vdc, 125°C Vdc, 125°C Vdc, 125°C 25°C 25°C 25°C 25°C 25°C 25°C -55°C -55°C -55°C -55°C -55°C 125°C 125°C 125°C 125°C 125°C 25°C 125°C -55°C 25°C -55°C TYP. 1.25 1020 1100 1500 1100 1600 UNIT
Junction Capacitance Breakdown Voltage
1.200 1.000 0.800 0.600 0.400 0.200 0.000 IF(A) 1000
-55C +25C +125C
Datasheet# MSC1031B
VF(V)

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