Sirenza Microdevices NGA-586 high performance InGaP/ GaAs Heterojuncti

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Sirenza Microdevices NGA-586 high performance InGaP/ GaAs Heterojuncti

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NGA-586
Sirenza Microdevices NGA-586 high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. Darlington configuration designed with InGaP process technology provides broadband performance with excellent thermal perfomance. heterojunction increases breakdown voltage minimizes leakage current between junctions. Cancellation emitter junction non-linearities results higher suppression intermodulation products. 80mA NGA-586 typically provides +39.6 output IP3, 19.8 gain, +18.9 compressed power using single positive voltage supply. Only DC-blocking capacitors, bias resistor optional choke required operation.
Gain Return Loss Freq. L=+25°C
GAIN
DC-5.5 GHz, Cascadable InGaP/GaAs MMIC Amplifier
Product Features
High Gain 18.6 1950 Cascadable Patented InGaP Technology Operates From Single Supply Thermal Resistance Package
Gain (dB)
Return Loss (dB)
Applications
Driver Amplifier Cellular, PCS, GSM, UMTS Amplifier Wireless Data, Satellite
Units °C/W 1950 1950 1950 Frequency 1950 2400 1950 1950 Min. 17.8 19.8 18.6 17.9 18.9 18.5 39.6 34.0 5500 14.9 19.5 Max. 21.8
Frequency (GHz)
mbol P1dB OIP3
Parameter Small Signal Gain Output Compression Output Third Order Intercept Point
Bandw idth Determined Return Loss (>10dB)
RTH,
Input Return Loss Output Return Loss Noise Figure Device Operating Voltage Device Operating Current Thermal Resistance (junction lead)
RBIAS Ohms 80mA Typ.
Test Conditions:
Tone Spacing MHz, Pout tone Ohms
information provided herein believed reliable press time. Sirenza Microdevices assumes responsibility inaccuracies omissions. Sirenza Microdevices assumes responsibility this information, such information shall entirely users risk. Prices specifications subject change without notice. patent rights licenses circuits described herein implied granted third party. Sirenza Microdevices does authorize warrant Sirenza Microdevices product life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc. worldwide rights reserved.
Almanor Ave., Sunnyvale, 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101105 Rev.
Preliminary NGA-586 DC-5.5 Cascadable MMIC Amplifier Typical Performance Operating Frequencies
Frequency (MHz)
mbol Parameter Unit 1950 2400 3500
OIP3 P1dB
Small Signal Gain Output Third Order Intercept Point Output Compression Input Return Loss Output Return Loss Reverse Isolation Noise Figure
RBIAS Ohms
20.5 37.7 20.1 29.3 35.9 22.7
20.1 38.6 19.0 21.3 33.8 22.7
19.8 39.6 18.9 17.7 28.7 22.6
18.6 34.0 18.5 14.9 19.5 22.1
17.9 32.0 17.9 15.4 19.6 21.9
15.5 27.4 13.7 15.8 21.1
Test Conditions:
Typ.
OIP3 Tone Spacing MHz, Pout tone Ohms
Noise Figure Frequency
Noise Figure (dB) Frequency (GHz)
Absolute Maximum Ratings
Parameter Max. Device Current (ID) Max. Device Voltage (VD) Absolute Limit
+150°C -40°C +85°C +150°C
Max. Input Max. Junction Temp. (TJ)
Operating Temp. Range (TL)
Max. Storage Temp.
Operation this device beyond these limits cause permanent damage. reliable continous operation, device voltage current must exceed maximum operating values specified table page one. Bias Conditions should also satisfy follow expression: IDVD RTH,
OIP3 Frequency
P1dB Frequency
OIP3 (dBm) Frequency (GHz)
P1dB (dBm)
+25°C -40°C +85°C
+25°C -40°C +85°C
Frequency (GHz)
Almanor Ave., Sunnyvale, 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101105 Rev.
Preliminary NGA-586 DC-5.5 Cascadable MMIC Amplifier
Frequency Frequency
S21(dB)
+25°C -40°C +85°C
S11(dB)
+25°C -40°C +85°C
Frequency (GHz)
Frequency (GHz)
S12(dB)
Frequency
S22(dB)
Frequency
+25°C -40°C +85°C
+25°C -40°C +85°C
Frequency (GHz)
Frequency (GHz)
over Temperature fixed RBIAS= ohms
VD(Volts)
+85°C +25°C
Temperature Constant
ID(mA)
-40°C
VD(Volts)
Temperature(°C)
Note: applications circuit page RBIAS compensates voltage current variation over temperature.
Almanor Ave., Sunnyvale, 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101105 Rev.
Preliminary NGA-586 DC-5.5 Cascadable MMIC Amplifier Basic Application Circuit
BIAS
1000
Application Circuit Element Values
Reference Designator Frequency (Mhz) 1950 2400 3500
NGA-586
Recommended Bias Resistor Values ID=80mA Supply Voltage(VS) RBIAS 7.5V
RBIAS
Note: RBIAS provides bias stability over temperature.
1000 Mounting Instructions
large ground area under device pins with many plated through-holes shown. recommend ounce copper. Measurements this data sheet were made thick FR-4 board with ounce copper both sides.
Part Identification Marking part will marked with designator surface package.
Function
escription nput requi external blocki capaci chosen frequency operati onnecti ground. holes best performance reduce lead nductance close ground leads possi ble.
OUT/ output voltage BIAS present therefore blocki capaci necessary proper operati
Caution: sensitive
Part Number Ordering Information
Part Number NGA-586 Reel Size Devices/Reel 1000
Appropriate precautions handling, packaging testing devices must observed.
Almanor Ave., Sunnyvale, 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101105 Rev.
Preliminary NGA-586 DC-5.5 Cascadable MMIC Amplifier
Dimensions inches [millimeters]
Layout
Dimensions inches [millimeters] Refer drawing posted www.sirenza.com tolerances.
Nominal Package Dimensions
Almanor Ave., Sunnyvale, 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101105 Rev.

Sirenza Microdevices NGA-586 high performance InGaP/ GaAs Heterojuncti

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