BAS31 CONNECTION DIAGRAM SOT-23 High Voltage General Pu
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BAS31
BAS31
CONNECTION DIAGRAM
SOT-23
High Voltage General Purpose Diode
Sourced from Process BAV19 characteristics.
Absolute Maximum Ratings*
Symbol
if(surge) Working Inverse Voltage Average Rectified Current Forward Current Recurrent Peak Forward Current
25°C unless otherwise noted
Parameter
Value
+150
Units
Tstg
Peak Forward Surge Current Pulse width second Pulse width microsecond Storage Temperature Range Operating Junction Temperature
*These ratings limiting values above which serviceability semiconductor device impaired.
NOTES: These ratings based maximum junction temperature degrees These steady state limits. factory should consulted applications involving pulsed duty cycle operations.
Thermal Characteristics
Symbol
25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction Ambient
BAS31
Units
mW/°C °C/W
©1997 Fairchild Semiconductor Corporation
BAS31
High Voltage General Purpose Diode
(continued)
Electrical Characteristics
Symbol
25°C unless otherwise noted
Parameter
Breakdown Voltage Reverse Current Forward Voltage
Test Conditions
150°C
1.25
Units
Diode Capacitance Reverse Recovery Time
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