Qualified MIL-PRF-19500/207 Devices 2N1479 2N1480 2N1481 2N1482 Qualif
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SILICON MEDIUM POWER TRANSISTOR
Qualified MIL-PRF-19500/207 Devices 2N1479 2N1480 2N1481 2N1482 Qualified Level
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base-Current Total Power Dissipation 250C Operating Storage Junction Temperature Range
Symbol
VCEO VCBO VEBO Tstg Symbol
2N1479 2N1481
2N1480 2N1482
Unit
+200 Max.
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case Unit
TO-5*
*See Appendix Package Outline
ELECTRICAL CHARACTERISTICS 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
CHARACTERISTICS
Collector-Emitter Breakdown Voltage mAdc Collector-Emitter Breakdown Voltage Vdc, 0.25 mAdc Vdc, 0.25 mAdc Collector-Base Cutoff Current Emitter-Base Cutoff Current 2N1479, 2N1481 2N1480, 2N1482 2N1479, 2N1481 2N1480, 2N1482 2N1479, 2N1481 2N1480, 2N1482 V(BR)CEO
V(BR)CEX
ICBO IEBO
µAdc µAdc
Lake Street, Lawrence, 01841 1-800-446-1158 (978) 794-1666 Fax: (978) 689-0803
120101 Page
2N1479, 2N1480, 2N1481, 2N1482 SERIES
ELECTRICAL CHARACTERISTICS (con't)
Characteristics Symbol Min. Max. Unit
CHARACTERISTICS
Forward-Current Transfer Ratio mAdc, Collector-Emitter Saturation Voltage mAdc, mAdc mAdc, mAdc Base-Emitter Voltage mAdc, 2N1479, 2N1480 2N1481, 2N1482 2N1479, 2N1480 2N1481, 2N1482 0.75 0.75
VCE(sat)
DYNAMIC CHARACTERISTICS
Forward Current Cutoff Frequency mAdc,
SWITCHING CHARACTERISTICS
Total Switching Time Vdc; mAdc; IB1= mAdc Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%.
toff
Lake Street, Lawrence, 01841 1-800-446-1158 (978) 794-1666 Fax: (978) 689-0803
120101 Page
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