AMS232 SILICON HIGH FREQUENCY TRANSISTOR APPLICATIONS H

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

AMS232 SILICON HIGH FREQUENCY TRANSISTOR APPLICATIONS H

Datasheet Thumbnail

Top Searches for this datasheet

High Collector-Emitter Breakdown High Frequency 1.2GHz 50mA Available TO-220 Package 120V Min.
AMS232
SILICON HIGH FREQUENCY TRANSISTOR
APPLICATIONS
High density Television Computer Monitors
GENERAL DESCRIPTION
AMS232 type small signal bipolar transistor designed high performance applications such advanced color monitor drivers that require both high frequency high voltage. fully implanted technology silicon nitride passivation makes AMS232 highly reliable device. complimentary transistor applications where matching characteristics important AMS264.
ORDERING INFORMATION:
PACKAGE TYPE TO-220 AMS232 OPERATING JUNCTION TEMP. RANGE -40°C +150°C
CONNECTIONS
Emitter Collector Base
FRONT VIEW
ABSOLUTE MAXIMUM RATINGS (Note
Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current 125V 130V 3.5V 250mA Operating Junction Temperature Storage Temperature Power Dissipation =75°C Thermal Resistance, Junction Case 150°C -40°C +150°C 25°C/W
Note1: Absolute Maximum Ratings indicate limits beyond which damage device occur. guaranteed specifications test conditions,
Electrical Characteristics. guaranteed specifications apply only test conditions listed.
Advanced Monolithic Systems, Inc.
www.advanced-monolithic.com
Phone (925) 443-0722
(925) 443-0723
AMS232
ELECTRICAL CHARACTERISTICS
Electrical Characteristics 25°C, unless otherwise specified Parameter
Characteristics Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Collector Cutoff Current Characteristics Current Gain Dynamic Characteristics Output Capacitance Collector Base Capacitance Input Capacitance Transistor Frequency 10V, 1MHz 10V, 1MHz 1MHz 15V, 50mA 50mA, V(BR)CEO V(BR)CBO V(BR)EBO ICES 1mA, 100µA, 100nA, 110V,
Symbol
Conditions
AMS232
Units
TYPICAL PERFORMANCE CHARACTERISTICS
Gain Bandwidth Product Collector Current GAIN BANDWIDTH PRODUCT (MHz) 1400 CAPACITANCE (pF)
Junction Capacitance Voltage CAPACITANCE (pF)
Input Capacitance Voltage
1200
1000
=250MHz
COLLECTOR BASE VOLTAGE
COLLECTOR CURRENT (mA)
EMITTER BASE VOLTAGE
Advanced Monolithic Systems, Inc.
www.advanced-monolithic.com
Phone (925) 443-0722
(925) 443-0723
AMS232
PACKAGE DIMENSIONS inches (millimeters) unless otherwise noted.
LEAD TO-220 PLASTIC PACKAGE
0.390-0.415 (9.906-10.541)
0.147-0.155 (3.734-3.937) 0.230-0.270 (5.842-6.858) 0.570-0.620 (14.478-15.748)
0.165-0.180 (4.191-4.572) 0.045-0.055 (1.143-1.397)
0.460-0.500 (11.684-12.700)
0.330-0.370 (8.382-9.398)
0.980-1.070 (24.892-27.178) 0.218-0.252 (5.537-6.401) 0.520-0.570 (13.208-14.478)
0.090-0.110 (2.286-2.794) 0.028-0.038 (0.711-0.965)
0.050 (1.270)
0.013-0.023 (0.330-0.584)
0.095-0.115 (2.413-2.921)
(TO-220) DRW# 042193
Advanced Monolithic Systems, Inc.
www.advanced-monolithic.com
Phone (925) 443-0722
(925) 443-0723

AMS232 SILICON HIGH FREQUENCY TRANSISTOR APPLICATIONS H

Top Searches for this datasheet

Other recent searches