High Output Power: P1dB 35.0dBm (Typ.) High Gain: G1dB 5.5dB (Typ.) Hi
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FLM1314-3F
High Output Power: P1dB 35.0dBm (Typ.) High Gain: G1dB 5.5dB (Typ.) High PAE: (Typ.) -45dBc@Po 24.0dBm Broad Band: 13.75 14.5GHz Impedance Matched Zin/Zout
FLM1314-3F power GaAs that internally matched standard communication bands provide optimum power gain system. Fujitsu's stringent Quality Assurance Program assures highest reliability consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol Tstg 25°C Condition Rating 25.0 +175 Unit
Fujitsu recommends following conditions reliable operation GaAs FETs: drain-source operating voltage (VDS) should exceed volts. forward reverse gate currents should exceed 13.0 -1.4 respectively with gate resistance 100.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power G.C.P. Power Gain G.C.P. Drain Current Power-added Efficiency Gain Flatness Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise CASE STYLE: Symbol IDSS VGSO P1dB G1dB Idsr 14.5GHz, 2-Tone Test Pout 24.0dBm S.C.L. Channel Case Idsr =10V, 0.65 IDSS (Typ.), 13.75 14.5 GHz, ZS=ZL= Test Conditions 900mA 70mA -70µA Min. -0.5 -5.0 34.0 Limit Typ. Max. 1400 2100 1300 -1.5 35.0 -3.0 1100 ±0.6 Unit °C/W
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition August 1999
FLM1314-3F
Ku-Band Internally Matched
POWER DERATING CURVE Total Power Dissipation Output Power (S.C.L.) (dBc)
OUTPUT POWER INPUT POWER
VDS=10V 14.5 14.51 2-tone test
Pout
(dBc)
Case Temperature (°C)
Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level
OUTPUT POWER FREQUENCY
P1dB
OUTPUT POWER INPUT POWER
14.25
Output Power (dBm)
Output Power (dBm)
31dBm 29dBm 27dBm
Pout
25dBm
13.7 13.9 14.1 14.3 14.5
Input Power (dBm)
Frequency (GHz)
FLM1314-3F
Ku-Band Internally Matched
+j50 +j100 +j25
14.3 13.55 13.55 13.7 13.7 13.9 14.1 13.9 14.7 14.1 14.5 13.9 14.3 14.1 14.7 14.5
+90°
+j10
+j250
13.7 13.9
14.7
14.3 14.1 14.5 14.3 14.5 14.7
180°
13.7
13.55 13.55
SCALE |S21|
-j10
-j250
-j25 -j50
-j100
SCALE |S12|
-90°
FREQUENCY (MHZ) 1355 1360 1365 1370 1375 1380 1385 1390 1395 1400 1405 1410 1415 1420 1425 1430 1435 1440 1445 1450 1455 1460 1465 1470
.522 .503 .485 .461 .440 .418 .394 .370 .344 .322 .299 .275 .255 .235 .220 .205 .195 .190 .190 .193 .199 .212 .223 .245 60.0 54.7 49.3 43.5 37.4 31.2 24.4 17.6 10.0 -6.0 -15.0 -24.8 -35.9 -46.3 -58.6 -71.6 -85.3 -98.6 -111.2 -123.6 -135.6 -146.3 -155.5
S-PARAMETERS 10V, 900mA 1.928 1.973 2.012 2.044 2.080 2.114 2.145 2.160 2.181 2.187 2.197 2.196 2.193 2.186 2.174 2.152 2.133 2.107 2.081 2.042 2.021 1.984 1.944 1.909 -160.3 -165.0 -169.9 -175.0 179.9 174.5 169.3 163.8 158.3 153.1 147.5 142.0 136.5 130.8 125.4 119.9 114.5 109.0 103.7 98.7 93.4 88.3 83.4 78.2 .071 .079 .083 .087 .090 .096 .102 .105 .109 .115 .120 .123 .126 .128 .132 .133 .137 .138 .139 .139 .140 .141 .139 .138 -179.5 176.8 171.6 165.4 161.9 156.3 150.8 146.9 139.7 136.8 130.8 127.0 121.4 115.3 110.1 104.5 100.3 94.1 89.4 84.0 79.5 74.9 69.1 65.4
.527 .511 .496 .475 .458 .438 .419 .398 .376 .355 .333 .318 .297 .278 .263 .245 .232 .219 .209 .205 .204 .206 .205 .211 89.5 84.8 79.6 74.6 69.3 63.7 57.5 50.7 44.2 36.7 29.1 21.3 12.3 -5.8 -16.4 -27.5 -37.7 -49.3 -60.7 -71.8 -83.4 -93.7 -104.6
Download S-Parameters, click here
FLM1314-3F
Ku-Band Internally Matched
Case Style "IA" Metal-Ceramic Hermetic Package
Min. (0.059) 1.25±0.15 (0.049) (0.004) (0.020) Min. (0.059) 1.8±0.15 (0.071) Max. (0.126) (0.319) Max. (0.008) 1.15 (0.045) 9.7±0.15 (0.382)
13.0±0.15 (0.512) 16.5±0.15 (0.650)
Gate Source (Flange) Drain Source (Flange)
Unit: mm(inches)
further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Jose, 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which hazardous human body environment. safety, observe following procedures:
these products into mouth. alter form this product into gas, powder, liquid through burning, crushing, chemical processing these by-products dangerous human body inhaled, ingested, swallowed. Observe government laws company regulations when discarding this product. This product must discarded accordance with methods specified applicable hazardous waste procedures.
Fujitsu Limited reserves right change products specifications without notice. information does convey license under rights Fujitsu Limited others. 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed U.S.A. FCSI0499M200
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