Epitaxial Planar Silicon Transistor 2SC3070 High hFE, Low-Fr

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Epitaxial Planar Silicon Transistor 2SC3070 High hFE, Low-Fr

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Ordering number:EN923G
Epitaxial Planar Silicon Transistor
2SC3070
High hFE, Low-Frequency General-Purpose Amplifier Applications
Applications
Low-frequency, general-purpose amplifier., various drivers, muting circuit.
Package Dimensions
unit:mm 2006A
[2SC3070]
Features
High current gain (hFE=800 3200). Large current capacity (IC=1.2A). collector-to-emitter saturation voltage (VCE(sat)=0.5V max). High VEBO (VEBO15V).
EIAJ SC-51
Specifications
Absolute Maximum Ratings 25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Tstg Conditions
Base Collector Emitter SANYO
Ratings +150
Unit
Electrical Characteristics 25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 VCB=20V, IE=0 VEB=10V, IC=0 VCE=5V, IC=500mA VCE=5V, IC=10mA VCE=10V, IC=50mA VCB=10V, f=1MHz 1500 Conditions Ratings 3200 Unit
SANYO products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO representative nearest before using SANYO products described contained herein such applications. SANYO assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges,or other parameters) listed products specifications SANYO products described contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1098HA No.923-1/3
2SC3070
Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol VCE(sat) VBE(sat) Conditions IC=500mA, IB=10mA IC=500mA, IB=10mA Ratings 0.12 0.85 Unit
V(BR)CBO IC=10µA, IE=0 V(BR)CEO IC=1mA, RBE= V(BR)EBO IE=10µA, IC=0
No.923-2/3
2SC3070
Specifications SANYO products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Electric Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO products(including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must expor without obtaining expor license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Electric Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO product that intend use. Information (including circuit diagrams circuit parameters) herein example only guaranteed volume production. SANYO believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information November, 1998. Specifications information herein subject change without notice.
No.923-3/3

Epitaxial Planar Silicon Transistor 2SC3070 High hFE, Low-Fr

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