2SA2031 2SC5669 Epitaxial Planar Silicon Transistor Triple Diffus

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2SA2031 2SC5669 Epitaxial Planar Silicon Transistor Triple Diffus

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Ordering number ENN6586
2SA2031 2SC5669
Epitaxial Planar Silicon Transistor Triple Diffused Planar Silicon Transistor
2SA2031 2SC5669
230V 15A, AF100W Output Applications
Features
Package Dimensions
unit 2022A
[2SA2031 2SC5669]
Large current capacitance. Wide high durability against breakdown. Adoption MBIT process.
15.6 14.0
20.0
15.0 20.0
Specifications
5.45 5.45
Base Collector Emitter SANYO TO-3PB
Note*( 2SA2031 Absolute Maximum Ratings Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Tstg Tc=25°C Conditions
Ratings (-)250 (-)230 (-)6 (-)15 (-)30 +150
Unit
Electrical Characteristics Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Current Gain Symbol ICBO IEBO hFE(1) hFE(2) Conditions VCB=(-)250V, IE=0 VEB=(-)4V, IC=0 VCE=(-)5V, IC=(-)1A VCE=(-)5V, IC=(-)7.5A Ratings (-)0.1 (-)0.1 Unit
Continued next page.
SANYO products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO representative nearest before using SANYO products described contained herein such applications. SANYO assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO products described contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61500 TA-2927 No.6586-1/4
2SA2031 2SC5669
Continued from preceding page.
Parameter Gain-Bandwidth Product Output Capacitance Base-to-Emitter Voltage Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol VCE(sat) V(BR)CBO V(BR)CEO V(BR)EBO tstg Conditions VCE=(-)5V, IC=(-)1A VCB=(-)10V, f=1MHz VCE=(-)5V, IC=(-)7.5A IC=(-)7.5A, IB=(-)0.75A IC=(-)5mA, IE=0 IC=(-)50mA, RBE= IE=(-)5mA, IC=0 specified test circuit. specified test circuit. specified test circuit. (-0.3)0.2 (-)250 (-)230 (-)6 (0.45)0.56 (1.75)3.3 (0.25)0.4 Ratings (10)15 (400)200 (-)2.0 Unit
Swicthing Time Test Circuit
PW=20µs D.C.1% INPUT 100µF 470µF OUTPUT
6.67
VBE= VCC=50V 10IB1= -10IB2=IC=7.5A PNP, polarity reversed.
2SA2031
2SC5669
-400mA
Collector Current,
Collector Current,
-300mA
300m
200mA
-200mA
100mA
-100mA
-40mA
-20mA
IB=0
40mA
20mA
IB=0
Collector-to-Emitter Voltage,
IT02058
Collector-to-Emitter Voltage,
IT02059
2SA2031 VCE=
Collector Current,
2SC5669 VCE=5V
Collector Current,
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0
IT02061
25°C
Base-to-Emitter Voltage,
IT02060
Base-to-Emitter Voltage,
No.6586-2/4
2SA2031 2SC5669
Ta=120°C
25°C
2SA2031 VCE=
Ta=120°C
25°C
2SC5669 VCE=5V
Current Gain,
Current Gain,
-40°C
-40°C
-0.01
-0.1
-1.0
Collector Current,
IT02062
0.01
VCE(sat)
Collector Current,
IT02063
VCE(sat)
Collector-to-Emitter Saturation Voltage, VCE(sat)
-1.0
Collector-to-Emitter Saturation Voltage, VCE(sat)
2SA2031 IB=10
0.01 0.01
2SC5669 IB=10
-0.01 -0.01
-0.1
-1.0
Forward Bias
Collector Current,
IT02064
Collector Current,
ICP=30A IC=15A
Collector Current,
Collector Dissipation,
2SA2031 2SC5669
2SA2031 2SC5669
0.01
Tc=25°C Single Pulse PNP, minus sign(-)is omitted
IT02066
Collector-to-Emitter Voltage,
Ambient Temperature,
IT02065 IT02067
2SA2031 2SC5669
Collector Dissipation,
Case Temperature,
IT02068
No.6586-3/4
-0.1
2SA2031 2SC5669
Specifications SANYO products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Electric Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO products(including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must expor without obtaining expor license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Electric Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO product that intend use. Information (including circuit diagrams circuit parameters) herein example only guaranteed volume production. SANYO believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties. This catalog provides information June, 2000. Specifications information herein subject change without notice.
No.6586-4/4

2SA2031 2SC5669 Epitaxial Planar Silicon Transistor Triple Diffus

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