2SC4453 Epitaxial Planar Silicon Transistor 2SC4453 Hig

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2SC4453 Epitaxial Planar Silicon Transistor 2SC4453 Hig

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Ordering number ENN2812A
2SC4453
Epitaxial Planar Silicon Transistor
2SC4453
High-Speed Switching Applications
Features
Package Dimensions
unit 2018B
[2SC4453]
0.16
Fast switching speed. collector saturation voltage. High gain-bandwidth product. Small collector capacity. Ultrasmall-sized package permitting 2SC4453applied sets made small slim.
0.95 0.95
Base Emitter Collector SANYO
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO Tstg Conditions
Ratings +150
Unit
Electrical Characteristics Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Current Gain Symbol ICBO IEBO Conditions VCB=20V, IE=0 VEB=3V, IC=0 VCE=1V, IC=10mA Ratings 200* Unit
Marking
2SC4453 classified follows Rank
Continued next page.
SANYO products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO representative nearest before using SANYO products described contained herein such applications. SANYO assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO products described contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2001 D2598 (KT) O278 No.2812-1/4
2SC4453
Continued from preceding page.
Parameter Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn Time Storage Time Fall Time Symbol VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO tstg Conditions VCE=10V, IC=10mA VCB=5V, f=1MHz IC=10mA, IB=1mA IC=10mA, IB=1mA IC=10µA, IE=0 IC=1mA, RBE= IE=10µA, IC=0 specified Test Circuit. specified Test Circuit. specified Test Circuit. Ratings 0.13 0.80 0.25 0.85 Unit
ton, toff Test Circuit
VOUT PW300ns D.C.2% 3.3k 3.3k 0.0023µF 0.0023µF 0.005µF 0.005µF 0.1µF
tstg Test Circuit
0.1µF 0.0023µF 0.0023µF 0.1µF VOUT
Sampling oscilloscope
PW300ns D.C.2%
10µF
10µF
0.1µF
0.1µF
-10V Waveforms VOUT VOUT VBB= VIN=+15V toff VBB=+12 VIN= -15V tstg VOUT
3.5mA
160µA 140µA
Collector Current,
Collector Current,
3.0mA 2.5mA 2.0mA
120µA
100µA
1.5mA
1.0mA
0.5mA
80µA 60µA 40µA
20µA
IB=0
ITR06987
IB=0
ITR06988
Collector-to-Emitter Voltage,
Collector-to-Emitter Voltage,
No.2812-2/4
Sampling oscilloscope
2SC4453
VCE=1V
VCE=10V
Gain-Bandwidth Product,
ITR06989
1000
Current Gain,
Ta=75°C 25°C
-25°C
Collector Current,
Collector Current,
ITR06990
f=1MHz
f=1MHz
Output Capacitance,
Input Capacitance,
ITR06991
ITR06992
Emitter-to-Base Voltage,
Collector-to-Base Voltage,
VCE(sat)
IB=10
VBE(sat)
IB=10
Collector-to-Emitter Saturation Voltage, VCE(sat)
Base-to-Emitter Saturation Voltage, VBE(sat)
-25°C
75°C
25°C
-25°C
25°C
75°C
Collector Current,
ITR06993
Time
Collector Current,
ITR06994
VCC=3V IC=10IB1= -10IB2
Collector Dissipation,
Switching Time, Time
tstg
ITR06995
Collector Current,
Ambient Temperature,
ITR06996
No.2812-3/4
2SC4453
Specifications SANYO products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Electric Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO products(including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must expor without obtaining expor license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Electric Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO product that intend use. Information (including circuit diagrams circuit parameters) herein example only guaranteed volume production. SANYO believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties. This catalog provides information December, 2001. Specifications information herein subject change without notice.
No.2812-4/4

2SC4453 Epitaxial Planar Silicon Transistor 2SC4453 Hig

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