3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET /Title (2N67 /Subject (3

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3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET /Title (2N67 /Subject (3

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2N6782
3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET /Title (2N67 /Subject (3.5A, 100V, 0.600 Ohm, NChannel Power MOSFET) /Autho /Keywords (Fairchild Corporation, NChannel Power MOSFET, TO205AF /Creator /DOCI pdfmark
2N6782 N-Channel enhancement mode silicon gate power field effect transistor designed applications such switching regulators, switching converters, motor drivers, relay drivers, drivers high power bipolar switching transistors requiring high speed gate drive power. This type operated directly from integrated circuits.
Features
3.5A, 100V rDS(ON) 0.600 Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device
Ordering Information
PART NUMBER 2N6782 PACKAGE TO-205AF BRAND 2N6782
Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards"
NOTE: When ordering, entire part number.
Symbol
Packaging
JEDEC TO-205AF
DRAIN (CASE)
SOURCE
GATE
©2001 Fairchild Semiconductor Corporation
2N6782 Rev.
2N6782
Absolute Maximum Ratings
25oC, Unless Otherwise Specified 2N6782 2.25 0.12 UNITS W/oC
Drain Source Breakdown Voltage (Note Drain Gate Voltage (RGS 20k) (Note .VDGR Continuous Drain Current 100oC Pulsed Drain Current (Notes Gate Source Voltage Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Maximum Power Dissipation Linear Derating Factor Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief .Tpkg
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 125oC.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS VDS(ON) IGSS rDS(ON) td(ON) td(OFF) CISS COSS CRSS Free Operation 80V, 188mA 4.28V, 3.5A 25V, 1MHz (Figure TEST CONDITIONS 0.25mA, VDS, 0.5mA 100V, 80V, 125oC 3.5A, ±20V 2.25A, 2.25A, 10V, 125oC 25oC, 3.5A, 2.25A 34V, 2.25A, (Figure MOSFET Switching Times Essentially Independent Operating Temperature 0.75 1000 ±100 0.600 1.080 8.33 UNITS
oC/W oC/W
Drain Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
On-State Drain Current (Note Gate Source Leakage Current Drain Source Resistance (Note
Diode Forward Voltage (Note Forward Transconductance (Note Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction Case Thermal Resistance Junction Ambient Safe Operating Area
Source Drain Diode Specifications
PARAMETER Reverse Recovery Time Reverse Recovered Charge NOTES: Pulse test: pulse width 300µs, duty cycle Repetitive rating: pulse width limited maximum junction temperature. Transient Thermal Impedance curve (Figure SYMBOL TEST CONDITIONS 150oC, 3.5A, dISD/dt 100A/µs 150oC, 3.5A, dISD/dt 100A/µs UNITS
©2001 Fairchild Semiconductor Corporation
2N6782 Rev.
2N6782 Typical Performance Curves
POWER DISSIPATION MULTIPLIER DRAIN CURRENT
Unless Otherwise Specified
CASE TEMPERATURE (oC)
CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
THERMAL IMPEDANCE ZJC, NORMALIZED 0.05 0.02 0.01 SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION NOTES: DUTY FACTOR: t1/t2 PEAK
FIGURE NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
OPERATION THIS AREA LIMITED rDS(ON)
80µs PULSE TEST
DRAIN CURRENT
DRAIN CURRENT
10µs 100µs
25oC RATED 8.33oC/W SINGLE PULSE 10ms 100ms 1000
VDS, DRAIN SOURCE VOLTAGE
-0.1
VDS, DRAIN SOURCE VOLTAGE
FIGURE FORWARD BIAS SAFE OPERATING AREA
FIGURE OUTPUT CHARACTERISTICS
©2001 Fairchild Semiconductor Corporation
2N6782 Rev.
2N6782 Typical Performance Curves
Unless Otherwise Specified (Continued)
80µs PULSE TEST 9.0V DRAIN CURRENT
80µs PULSE TEST
DRAIN CURRENT
8.0V 7.0V
125oC 25oC -55oC
6.0V 5.0V 4.0V VDS, DRAIN SOURCE VOLTAGE
VGS, SOURCE DRAIN VOLTAGE
FIGURE SATURATION CHARACTERISTICS
rDS(ON), ON-STATE RESISTANCE NORMALIZED ON-RESISTANCE 2.00 1.75 1.50 1.25 1.00 0.75 0.50
FIGURE TRANSFER CHARACTERISTICS
1.5A
DRAIN CURRENT
0.25
JUNCTION TEMPERATURE (oC)
NOTE: Heating effect pulse minimal. FIGURE DRAIN SOURCE RESISTANCE GATE VOLTAGE DRAIN CURRENT FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
1.15 NORMALIZED ON-RESISTANCE 1.10
1MHz CISS CRSS COSS
1.05 1.00 0.95 0.90 0.85 0.80 JUNCTION TEMPERATURE (oC) CAPACITANCE (pF)
CISS COSS CRSS
VDS, DRAIN SOURCE VOLTAGE
FIGURE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE JUNCTION TEMPERATURE
FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE
©2001 Fairchild Semiconductor Corporation
2N6782 Rev.
2N6782 Typical Performance Curves
gfs, TRANSCONDUCTANCE
Unless Otherwise Specified (Continued)
IDR, REVERSE DRAIN CURRENT
80µs PULSE TEST
-55oC 25oC
80ms PULSE TEST
150oC
25oC
125oC
DRAIN CURRENT
VSD, SOURCE DRAIN VOLTAGE
FIGURE TRANSCONDUCTANCE DRAIN CURRENT
FIGURE SOURCE DRAIN DIODE VOLTAGE
VGS, GATE SOURCE VOLTAGE
TOTAL GATE CHARGE (nC)
FIGURE GATE SOURCE VOLTAGE GATE CHARGE
©2001 Fairchild Semiconductor Corporation
2N6782 Rev.
2N6782 Test Circuits Waveforms
BVDSS VARY OBTAIN REQUIRED PEAK
0.01
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
CURRENT REGULATOR
(ISOLATED SUPPLY) SAME TYPE Qg(TOT)
BATTERY
0.2µF
0.3µF
IG(REF) CURRENT SAMPLING RESISTOR
CURRENT SAMPLING RESISTOR IG(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORMS
©2001 Fairchild Semiconductor Corporation
2N6782 Rev.
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
Quiet SeriesDISCLAIMER
FAST
QFETQSQT OptoelectronicsQuiet SeriesSILENT SWITCHER
SMART SuperSOTTM-6 SuperSOTTM-8
VCX
STAR*POWER used under license
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices critical component component life systems which, intended surgical implant into support device system whose failure perform body, support sustain life, whose reasonably expected cause failure life failure perform when properly used accordance support device system, affect safety with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.

3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET /Title (2N67 /Subject (3

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