2SC3751 Triple Diffused Planar Silicon Transistor 2SC3751

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2SC3751 Triple Diffused Planar Silicon Transistor 2SC3751

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Ordering number ENN1970B
2SC3751
Triple Diffused Planar Silicon Transistor
2SC3751
800V 1.5A Switching Regulator Applications
Features
Package Dimensions
unit 2041A
[2SC3751]
10.0
High breakdown voltage high reliability. Fast switching speed. Wide ASO. Adoption MBIT process. Micaless package facilitating mounting.
18.1
16.0
14.0
0.75
2.55
2.55
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Tstg PW300µs, Duty Cycle10% Tc=25°C Conditions
Base Collector Emitter SANYO TO-220ML
Ratings 1100 +150 Unit
2.55
2.55
Electrical Characteristics Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO Conditions VCB=800V, IE=0 VEB=5V, IC=0 Ratings Unit
Continued next page.
SANYO products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO representative nearest before using SANYO products described contained herein such applications. SANYO assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO products described contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92001 N3098HA (KT)/4237 2046 No.1970-1/4
2SC3751
Continued from preceding page.
Parameter Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Collector-to-Emitter Sustain Voltage Turn-On Time Storage Time Fall Time Rank Symbol hFE1 hFE2 VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO VCEX(sus) tstg Conditions VCE=5V, IC=0.1A VCE=5V, IC=0.5A VCE=10V, IC=0.1A VCB=10V, f=1MHz IC=0.75A, IB=0.15A IC=0.75A, IB=0.15A IC=1mA, IE=0 IC=5mA, RBE= IE=1mA, IC=0 IC=0.75A, IB1=-IB2=0.15A, L=5mH, clamped VCC=400V, 5IB1=-2.5IB2=IC=1A, RL=400 VCC=400V, 5IB1=-2.5IB2=IC=1A, RL=400 VCC=400V, 5IB1=-2.5IB2=IC=1A, RL=400 1100 Ratings Unit
hFE1 2SC3751 classified follows. When specifying hFE1 rank, specify ranks more principle.
Switching Time Test Circuit
PW=20µs D.C.1% INPUT OUTPUT 100µF VBE= 470µF VCC=400V
VCE=5V
Collector Current,
Current Gain,
120mA 100mA 80mA 60mA 40mA
Ta=120°C
25°C
20mA
10mA
-40°C
IB=0
0.01
Collector-to-Emitter Voltage,
ITR05871
Collector Current,
ITR05872
VCE(sat)
VBE(sat)
IB=5
IB=5
Base-to-Emitter Saturation Voltage, VBE(sat)
Collector-to-Emitter Saturation Voltage, VCE(sat)
0.01
Ta=1 20°C
-40°C
25°C
-40°
120°C
0.01
Collector Current,
ITR05873
Collector Current,
ITR05874
No.1970-2/4
2SC3751
VCE=5V
Time
tstg
Switching Time, Time
Collector Current,
ITR05875
Ta=1 20°C
25°C -40°C
Base-to-Emitter Voltage,
Forward Bias
ICP=5A
Reverse Bias
Collector Current,
ITR05876
Collector Current,
0.01
Collector Current,
IC=1.5A
Tc=25°C Single pulse
IB2= -0.15A Tc=25°C
1000 ITR05878
Collector-to-Emitter Voltage,
1000 ITR05877
Collector-to-Emitter Voltage,
Collector Dissipation,
Case Temperature,
ITR05879
No.1970-3/4
2SC3751
Specifications SANYO products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Electric Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO products(including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must expor without obtaining expor license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Electric Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO product that intend use. Information (including circuit diagrams circuit parameters) herein example only guaranteed volume production. SANYO believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties. This catalog provides information September, 2001. Specifications information herein subject change without notice.
No.1970-4/4

2SC3751 Triple Diffused Planar Silicon Transistor 2SC3751

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