N-Channel Silicon MOSFET 2SK2349 High-Voltage, High-Speed Sw

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N-Channel Silicon MOSFET 2SK2349 High-Voltage, High-Speed Sw

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Ordering number EN5315A
N-Channel Silicon MOSFET
2SK2349
High-Voltage, High-Speed Switching Applications
Features
resistance, ultrahigh-speed switching. High reliability (Adoption process).
Package Dimensions
unit: 2131-TO-3JML
[2SK2349]
Specifications Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage temperature Symbol VDSS VGSS Tstg Conditions
Gate Drain Source SANYO: TO-3JML
PW10µs, duty cycle1% Tc=25°C
Ratings 1500 +150
Unit
Electrical Characteristics Ta=25°C
Parameter Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to Source Leak Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss Conditions ID=1mA, VGS=0 VDS=1500V, VGS=0 VGS=±30V, VDS=0 VDS=10V, ID=1mA VDS=20V, ID=5A ID=5A, VGS=10V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz Ratings 1500 ±100 2900 Unit
Continued next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, JAPAN 72597TS (KOTO) TA-1033 No.5315-1/4
2SK2349
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Reverse Recovery Time Symbol td(on) td(off) Conditions Ratings Unit
ID=5A, VGS=10V, VDD=200V, RGS=50 IS=10A, VGS=0 IS=10A, di/dt=100A/µs
Switching Time Test Circuit
4.5V
Drain Current,
Drain Current,
3.5V
Drain-to-Source Voltage,
=20V
Drain-to-Source Voltage,
=10V
Tc=-25°C
Drain Current,
25°C
Drain Current,
75°C
Gate-to-Source Voltage,
Case Temperature,
No.5315-2/4
2SK2349
VGS(off)
=10V =1mA
Time
=200V =10V P.W.= D.C.0.5%
Switching Time, Time
Cutoff Voltage, VGS(off)
1000
d(off)
d(on)
Case Temperature, DS(on)
Tc=25°C
Drain Current, DS(on)
Static Drain-to-Source ON-State Resistance, (on)
Static Drain-to-Source ON-State Resistance, (on)
Gate-to-Source Voltage,
Case Temperature,
Forward Transfer Admittance,
=25°C
=20V =10V
25°C
Forward Transfer Admittance,
=10V
Drain Current,
10000
Drain Current,
1MHz
Ciss,Coss,Crss
10µs
Ciss,Coss,Crss
1000
Drain Current,
Ciss
,,,,,,,,, ,,,,,,,,, 10,,,,,,,,, ,,,,,,,,, ,,,,,,,,, ,,,,,,,,,
Operation this area limited RDS(on). =25°C Single pulse
Coss
Crss
1000
Drain-to-Source Voltage,
Drain-to-Source Voltage,
No.5315-3/4
2SK2349
Allowable Power Dissipation,
Allowable Power Dissipation,
Ambient Temperature,
Case Temperature,
products described contained herein intended surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment like, failure which directly indirectly cause injury, death property lose. Anyone purchasing products described contained herein above-mentioned shall: Accept full responsibility indemnify defend SANYO ELECTRIC CO., LTD., affiliates, subsidiaries distributors their officers employees, jointly severally, against claims litigation damages, cost expenses associated with such use: impose responsibilty fault negligence which cited such claim litigation SANYO ELECTRIC CO., LTD., affiliates, subsidiaries distributors their officers employees jointly severally. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties. This catalog provides information July, 1997. Specifications information herein subject change without notice.
No.5315-4/4

N-Channel Silicon MOSFET 2SK2349 High-Voltage, High-Speed Sw

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