P-Channel Silicon MOSFET FW103 Features Package Dimensi

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P-Channel Silicon MOSFET FW103 Features Package Dimensi

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Ordering number EN5305A
P-Channel Silicon MOSFET
FW103
Features
Package Dimensions
resistance unit: Ultrahigh-speed switching. 2129-SOP8 Composite type with 4V-drive P-channel MOSFETs facilitating high-density mounting. Matched pair capability.
[FW103]
Specifications Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage temperature Symbol VDSS VGSS Tstg Conditions Ratings
Source1 Gate1 Source2 Gate2 Drain2 Drain2 Drain1 Drain1 SANYO SOP8
PW10µs, duty cycle1% Mounted ceramic board 1unit Mounted ceramic board
+150
Unit
Electrical Characteristics Ta=25°C
Parameter Breakdown Voltage Zero-Gate-Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) RDS(on) Ciss Coss Crss Conditions ID=-1mA, VGS=0 VDS=-30V, VGS=0 VGS=±16V, VDS=0 VDS=-10V, ID=-1mA VDS=-10V, ID=-3A ID=-3A, VGS=-10V ID=-3A, VGS=-4V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz Ratings -100 -2.5 Unit
-1.0
Continued next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, JAPAN O1397TS (KOTO) TA-0255 No.5305-1/3
FW103
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Symbol td(on) td(off) Conditions specified Test Circuit. IS=-3A, VGS=0 Ratings -1.0 Unit
-1.2
Switching Time Test Circuit
Electrical Connection
(Top view)
10µs
Allowable Power Dissipation, PD(FET2)
Drain Current,
Operation this area limited RDS(on). Ta=25°C 1pulse 1unit
,,,,,,,,, ,,,,,,,,, ,,,,,,,,, ,,,,,,,,, ,,,,,,,,, ,,,,,,,,,
(FET (FET1)
Drain-to-Source Voltage,
Allowable Power Dissipation, PD(FET1)
Allowable Power Dissipation,
Mounted ceramic board
Ambient Temperature,
No.5305-2/3
FW103
products described contained herein intended surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment like, failure which directly indirectly cause injury, death property lose. Anyone purchasing products described contained herein above-mentioned shall: Accept full responsibility indemnify defend SANYO ELECTRIC CO., LTD., affiliates, subsidiaries distributors their officers employees, jointly severally, against claims litigation damages, cost expenses associated with such use: impose responsibilty fault negligence which cited such claim litigation SANYO ELECTRIC CO., LTD., affiliates, subsidiaries distributors their officers employees jointly severally. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties. This catalog provides information October, 1997. Specifications information herein subject change without notice.
No.5305-3/3

P-Channel Silicon MOSFET FW103 Features Package Dimensi

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