TYPE IRF540 IRF540FI 0.077 0.077 TYPICAL RDS(on) 0.045 AVALA

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TYPE IRF540 IRF540FI 0.077 0.077 TYPICAL RDS(on) 0.045 AVALA

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IRF540 IRF540FI
TYPE IRF540 IRF540FI
0.077 0.077
TYPICAL RDS(on) 0.045 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA 100oC GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE TO-220
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID RELAY DRIVERS REGULATORS DC-DC DC-AC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter IRF540 Drain-source Voltage Drain- gate Voltage Gate-source Voltage Drain Current (cont.) Drain Current (cont.) Drain Current (pulsed) Total Dissipation Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
Value IRF540FI 2000
Unit
Pulse width limited safe operating area
July 1993
IRF540/FI
THERMAL DATA
TO-220 thj-cas Rthj- Thermal Resistance Junction-case 62.5 ISOWATT220 3.33
Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max, Single Pulse Avalanche Energy (starting Repetitive Avalanche Energy (pulse width limited max, Avalanche Current, Repetitive Not-Repetitive pulse width limited max,
Value
Unit
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symbol BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions Min. 1000 Typ. Max. Unit
Zero Gate Voltage Rating Drain Current Rating Gate-body Leakage Current
Symbol S(th) Parameter Gate Threshold Voltage Static Drain-source Resistance State Drain Current Test Conditions Min. Typ. 0.045 Max. 0.077 Unit
S(on)
DYNAMIC
Symbol Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions S(on) Min. Typ. 1600 2100 Max. Unit
IRF540/FI
ELECTRICAL CHARACTERISTICS (continued) SWITCHING RESISTIVE LOAD
Symbol d(on) d(off Parameter Turn-on Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions (see test circuit) Rating (see test circuit) Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbol Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge di/dt A/µs Test Conditions Min. Typ. Max. Unit
Pulsed: Pulse duration duty cycle Pulse width limited safe operating area
Safe Operating Area TO-220 Package
Safe Operating Area ISOWATT220 Package
IRF540/FI
Thermal Impedance TO-220 Package
Thermal Impedance ISOWATT220 Package
Derating Curve TO-220 Package
Derating Curve ISOWATT220 Package
Output Characteristics
Transfer Characteristics
IRF540/FI
Transconductance
Static Drain-source Resistance
Gate Charge Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage Temperature
Normalized Resistance Temperature
IRF540/FI
Source-drain Diode Forward Characteristics
Unclamped Inductive Load Test Circuit
Unclamped Inductive Waveforms
Switching Time Test Circuit
Gate Charge Test Circuit
IRF540/FI
TO-220 MECHANICAL DATA
DIM. MIN. DIA. 13.0 2.65 15.25 3.75 0.49 0.61 1.14 1.14 4.95 10.0 16.4 14.0 2.95 15.75 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107
Dia.
P011C
IRF540/FI
ISOWATT220 MECHANICAL DATA
DIM. MIN. 28.6 15.9 0.75 1.15 1.15 4.95 30.6 10.6 16.4 1.126 0.385 0.626 0.354 0.118 TYP. MAX. 2.75 10.4 MIN. 0.173 0.098 0.098 0.015 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
P011G
IRF540/FI
Information furnished believed accurate reliable. However, SGS-THOMSON Microelectronics assumes responsability consequences such information infringement patents other rights third parties which results from use. license granted implication otherwise under patent patent rights SGS-THOMSON Microelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. SGS-THOMSON Microelectronics products authorized critical components life support devices systems without express written approval SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics Rights Reserved SGS-THOMSON Microelectronics GROUP COMPANIES Australia Brazil France Germany Hong Kong Italy Japan Korea Malaysia Malta Morocco Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U.S.A

TYPE IRF540 IRF540FI 0.077 0.077 TYPICAL RDS(on) 0.045 AVALA

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