Epitaxial Planar Silicon Transistor 2SC4188 Ultrahigh-Defini

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Epitaxial Planar Silicon Transistor 2SC4188 Ultrahigh-Defini

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Ordering number:EN2557B
Epitaxial Planar Silicon Transistor
2SC4188
Ultrahigh-Definition Display Video Output Applications
Features Package Dimensions
unit:mm 2010C
[2SC4188]
High breakdown voltage VCEO200V. Small reverse transfer capacitance excellent high frequency characteristic Cre=1.3pF typ. Adoption FBET process.
JEDEC TO220AB EIAJ SC46
Specifications
Absolute Maximum Ratings 25°C
Parameter Collector-to-Base Voltage Collecor-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Tempreature Storage temperature Symbol VCBO VCEO VEBO Conditions
Base Collector Emitter
Ratings
Unit
Tc=25°C
Tstg
+150
2SC4188 classified 10mA follows
SANYO products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO representative nearest before using SANYO products described contained herein such applications. SANYO assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges,or other parameters) listed products specifications SANYO products described contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82098HA (KT)/5118TA/4217TA, No.2557-1/4
2SC4188
Electrical Characteristics 25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Collector-to-Emitter Saturatin Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol ICBO IEBO VCE(sat) VBE(sat) VCB=150V, IE=0 VEB=4V, IC=0 VCE=10V, IC=10mA VCE=30V, IC=10mA VCB=30V, f=1MHz VCB=30V, f=1MHz IC=20mA, IB=2mA IC=20mA, IB=2mA Conditions Ratings 320* Unit
V(BR)CBO IC=10µA, IE=0 V(BR)CEO IC=1mA, RBE= V(BR)EBO IE=10µA, IC=0
No.2557-2/4
2SC4188
No.2557-3/4
2SC4188
Specifications SANYO products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Electric Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO products described contained herein fall under strategic products (including services) controlled under Foreign Exchange Foreign Trade Control Japan, such products must exported without obtaining export license from Ministry International Trade Industry accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Electric Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO product that intend use. Information (including circuit diagrams circuit parameters) herein example only guaranteed volume production. SANYO believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information August, 1998. Specifications information herein subject change without notice.
No.2557-4/4

Epitaxial Planar Silicon Transistor 2SC4188 Ultrahigh-Defini

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