P-Channel Silicon MOSFET 2SJ584LS Features ON-resistanc

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P-Channel Silicon MOSFET 2SJ584LS Features ON-resistanc

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Ordering number:ENN6410
P-Channel Silicon MOSFET
2SJ584LS
Features
ON-resistance. Ultrahigh-speed switching. Micaless package facilitating mounting.
Package Dimensions
unit:mm 2078B
[2SJ584LS]
10.0
16.1
16.0
14.0
0.75
Specifications
Absolute Maximum Ratings 25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS Tstg
PW10µs, duty cycle1% Tc=25°C
2.55
2.55
Gate Drain Source SANYO TO-220FI-LS
Conditions
Ratings -250 -4.5 +150
Unit
Electrical Characteristics 25°C
Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) RDS(on) ID=-1mA, VGS=0 IG=±100µA, VDS=0 VDS=-250V, VGS=0 VGS=±25V, VDS=0 VDS=-10V, ID=-1mA VDS=-10V, ID=-2.5A ID=-2.5A, VGS=-10V -3.5 0.95 Conditions Ratings -250 -100 -5.0 Unit
Continued next page.
SANYO products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO representative nearest before using SANYO products described contained herein such applications. SANYO assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges,or other parameters) listed products specifications SANYO products described contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
80300TS (KOTO) TA-2755 No.6410-1/4
2SJ584LS
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) td(off) VDS=-20V, f=1MHz VDS=-20V, f=1MHz VDS=-20V, f=1MHz specified Test Circuit specified Test Circuit specified Test Circuit specified Test Circuit VDS=-100V, VGS=-10V, ID=-4.5A VDS=-100V, VGS=-10V, ID=-4.5A VDS=-100V, VGS=-10V, ID=-4.5A IS=-4.5A, VGS=0 Conditions Ratings 12.5 -0.9 -1.5 Unit
Marking J584
Switching Time Test Circuit
VDD= -100V -10V PW=10µs D.C.1% -2.5A RL=40
VOUT
2SJ584LS
-5.0 -4.5 -4.0
=-10
VDS= -10V
Drain Current,
-3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5
Drain Current,
75°C
Drain-to-Source Voltage,
IT01497
Gate-to-Source Voltage,
IT01498
RDS(on)
Static Drain-to-Source On-State Resistance, (on)
RDS(on)
VGS= -10V -2.5A
Static Drain-to-Source On-State Resistance, (on)
Tc=25°C -2.5A
IT01499
Gate-to-Source Voltage,
Case Temperature,
IT01500
No.6410-2/4
2SJ584LS
VDS= -10V
Forward Transfer Admittance,
-1.0 -0.1
75°C
Forward Current,
Tc=75 25°C
-0.3 -0.6
-0.1
-0.01
-25°C
Drain Current,
-1.0
IT01501 10000
-0.9
-1.2 IT01502
Diode Forward Voltage,
1000
Time
VDD= -100V VGS= -10V
Ciss, Coss, Crss
f=1MHz
Switching Time, Time
-0.1
td(off)
Ciss, Coss, Crss
1000
Ciss
td(on)
Coss
Crss
-1.0
IT01504
Drain Current,
IT01503 -100
Drain-to-Source Voltage,
VDS= -100V -4.5A Drain Current,
IDP= -18A
Gate-to-Source Voltage,
100m
-1.0
-4.5A
Operation this area limited RDS(on).
Total Gate Charge,
-0.1 Tc=25°C Single pulse -0.01 -1.0
-100
IT01505
Drain-to-Source Voltage,
-1000 IT01506
Allowable Power Dissipation,
Allowable Power Dissipation,
Ambient Temperature,
IT01508
Case Temperature,
IT01507
No.6410-3/4
2SJ584LS
Specifications SANYO products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Electric Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO products(including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must expor without obtaining expor license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Electric Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO product that intend use. Information (including circuit diagrams circuit parameters) herein example only guaranteed volume production. SANYO believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information August, 2000. Specifications information herein subject change without notice.
No.6410-4/4

P-Channel Silicon MOSFET 2SJ584LS Features ON-resistanc

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