Matched N-Channel JFET Pairs Part Number 2N5911 2N5912
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2N5911/5912
Matched N-Channel JFET Pairs
Part Number
2N5911 2N5912
VGS(off)
V(BR)GSS
(mS)
(pA)
jVGS1 VGS2j (mV)
FEATURES
Two-Chip Design High Slew Rate Offset/Drift Voltage Gate Leakage: Noise High CMRR:
BENEFITS
Minimum Parasitics Ensuring Maximum High-Frequency Performance Improved Speed, Settling Time Accuracy Minimum Input Error/Trimming Requirement Insignificant Signal Loss/Error Voltage High System Sensitivity Minimum Error with Large Input Signal
APPLICATIONS
Wideband Differential Amps High-Speed, Temp-Compensated, Single-Ended Input Amps High Speed Comparators Impedance Converters
DESCRIPTION
2N5911/5912 matched pairs JFETs mounted TO-78 package. This two-chip design reduces parasitics gives better performance high frequencies while ensuring extremely tight matching. hermetically-sealed TO-78 package available with full military screening MIL-S-19500 (see Military Information). similar products SO-8 packaged SST440/SST441, TO-71 packaged U440/U441, low-noise SST/U401 series, low-leakage U421/423 data sheets.
TO-78
Case View
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage Gate-Gate Voltage Gate Current Lead Temperature (1/16" from case sec.) 300_C Storage Temperature 200_C Operating Junction Temperature 150_C applications information AN102. Document Number: 70255 S-04031-Rev. 04-Jun-01 www.vishay.com Power Dissipation Sidea Totalb
Notes Derate mW/_C above 25_C Derate mW/_C above 25_C
2N5911/5912
SPECIFICATIONS 25_C UNLESS OTHERWISE NOTED)
Limits
2N5911 2N5912
Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current
Symbol
Test Conditions
Typa
Unit
V(BR)GSS VGS(off) IDSS IGSS VGS(F)
150_C 125_C
-3.5 -0.3 -1.5
-100 -250 -100 -100 -0.3
-100 -250 -100 -100 -0.3
Gate Operating Current Gate-Source Voltage Gate-Source Forward Voltagec
Dynamic
Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage Noise Figure Ciss Crss
Matching
Differential Gate-Source Voltage Gate-Source Voltage Differential Change with Temperature Saturation Drain Current Ratio GS2| GS2| DSS1 DSS2 gfs1 gfs2 G1-I CMRR 125_C mV/_C
0.98
0.95
0.95
Transconductance Ratio
0.98
0.95
0.95
Differential Gate Current Common Mode Rejection Ratioc
125_C
0.005
Notes Typical values DESIGN ONLY, guaranteed subject production testing. Pulse test: v300 duty cycle v3%. This parameter registered with JEDEC.
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Document Number: 70255 S-04031-Rev. 04-Jun-01
2N5911/5912
TYPICAL CHARACTERISTICS 25_C UNLESS OTHERWISE NOTED)
Drain Current Transconductance Gate-Source Cutoff Voltage
IDSS
Forward Transconductance (mS)
Gate Leakage Current
IG(on)
IDSS Saturation Drain Current (mA)
125_C Gate Leakage IGSS 125_C 25_C IGSS 25_C
IDSS
Drain-Gate Voltage
VGS(off) Gate-Source Cutoff Voltage
Output Characteristics
VGS(off) Drain Current (mA) Drain Current (mA) -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
Output Characteristics
VGS(off) -0.5 -1.0 -1.5 -2.0
-2.5 -3.0
-3.5
Drain-Source Voltage
Drain-Source Voltage
Output Characteristics
VGS(off) Drain Current (mA) -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 Drain Current (mA)
Output Characteristics
VGS(off) -0.5 -2.0 -2.5 -3.0 -3.5 -1.0 -1.5
Drain-Source Voltage
Drain-Source Voltage
Document Number: 70255 S-04031-Rev. 04-Jun-01
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2N5911/5912
TYPICAL CHARACTERISTICS 25_C UNLESS OTHERWISE NOTED)
Transfer Characteristics
VGS(off) Drain Current (mA) Drain Current (mA) -55_C 25_C VGS(off) -55_C 25_C
Transfer Characteristics
125_C
125_C
-0.4 -0.8 -1.2 -1.6
Gate-Source Voltage
Gate-Source Voltage
Transconductance Gate-Source Voltage
VGS(off) Forward Transconductance (mS) -55_C 25_C 125_C Forward Transconductance (mS)
Transconductance Gate-Source Voltage
VGS(off)
25_C 125_C
-55_C
-0.4 -0.8 -1.2 -1.6
Gate-Source Voltage
Gate-Source Voltage
Circuit Voltage Gain Drain Current
rDS(on) Drain-Source On-Resistance
On-Resistance Drain Current
VGS(off) Voltage Gain VGS(off) Drain Current (mA)
VGS(off)
Assume
25_C Drain Current (mA)
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Document Number: 70255 S-04031-Rev. 04-Jun-01
2N5911/5912
TYPICAL CHARACTERISTICS 25_C UNLESS OTHERWISE NOTED)
Common-Source Input Capacitance Gate-Source Voltage
Reverse Feedback Capacitance (pF) Input Capacitance (pF)
Common-Source Reverse Feedback Capacitance Gate-Source Voltage
Gate-Source Voltage
Gate-Source Voltage
Input Admittance
25_C 25_C
Forward Admittance
(mS)
(mS)
-bfs -gfg
Frequency (MHz) 1000 1000
Frequency (MHz)
Reverse Admittance
25_C -brs (mS) 25_C
Output Admittance
(mS)
-brg -grs
bog,
-grg 0.01
1000
gog,
1000
Frequency (MHz)
Frequency (MHz)
Document Number: 70255 S-04031-Rev. 04-Jun-01
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2N5911/5912
TYPICAL CHARACTERISTICS 25_C UNLESS OTHERWISE NOTED)
Equivalent Input Noise Voltage Frequency
Output Conductance (µS) VGS(off)
Output Conductance Drain Current
Noise Voltage
25_C
-55_C
125_C
Frequency (Hz)
Drain Current (mA)
On-Resistance Output Conductance Gate-Source Cutoff Voltage
rDS(on) Drain-Source On-Resistance Output Conductance (µS) Forward Transconductance (mS)
Common-Source Forward Transconductance Drain Current
VGS(off) -55_C
25_C 125_C
Drain Current (mA)
VGS(off) Gate-Source Cutoff Voltage
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Document Number: 70255 S-04031-Rev. 04-Jun-01
Legal Disclaimer Notice
Vishay
Notice
Specifications products displayed herein subject change without notice. Vishay Intertechnology, Inc., anyone behalf, assumes responsibility liability errors inaccuracies. Information contained herein intended provide product description only. license, express implied, estoppel otherwise, intellectual property rights granted this document. Except provided Vishay's terms conditions sale such products, Vishay assumes liability whatsoever, disclaims express implied warranty, relating sale and/or Vishay products including liability warranties relating fitness particular purpose, merchantability, infringement patent, copyright, other intellectual property right. products shown herein designed medical, life-saving, life-sustaining applications. Customers using selling these products such applications their risk agree fully indemnify Vishay damages resulting from such improper sale.
Document Number: 91000 Revision: 08-Apr-05
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