IRG4PC50FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SO
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IRG4PC50FDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Fast: Optimized medium operating frequencies hard switching, resonant mode). Generation IGBT design provides tighter parameter distribution higher efficiency than Generation IGBT co-packaged with HEXFREDultrafast, ultra-soft-recovery anti-parallel diodes bridge configurations Industry standard TO-247AC package Lead-Free
Fast CoPack IGBT
VCES 600V
VCE(on) typ. 1.45V
@VGE 15V,
n-cha
Benefits
Generation IGBT's offer highest efficiencies available IGBT's optimized specific application conditions HEXFRED diodes optimized performance with IGBT's Minimized recovery characteristics require less/no snubbing Designed "drop-in" replacement equivalent industry-standard Generation IGBT's
TO-247AC
Absolute Maximum Ratings
Parameter
VCES 25°C 100°C 100°C 25°C 100°C TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Soldering Temperature, sec. Mounting Torque, 6-32 Screw.
Max.
+150 (0.063 (1.6mm) from case) (1.1
Units
Thermal Resistance
Parameter
Junction-to-Case IGBT Junction-to-Case Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
Typ.
-0.24 (0.21)
Max.
0.64 0.83
Units
°C/W
(oz)
04/29/04
IRG4PC50FDPbF
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th) VGE(th)/TJ ICES IGES
Parameter Min. Collector-to-Emitter Breakdown VoltageS Temperature Coeff. Breakdown Voltage -Collector-to-Emitter Saturation Voltage -Gate Threshold Voltage Temperature Coeff. Threshold Voltage -Forward Transconductance Zero Gate Voltage Collector Current -Diode Forward Voltage Drop -Gate-to-Emitter Leakage Current
Typ. -0.62 1.45 1.79 1.53 -1.3
Max. Units Conditions 250µA V/°C 1.0mA Fig. 39A, 150°C VGE, 250µA mV/°C VGE, 250µA 100V, 600V 6500 600V, 150°C Fig. 25A, 150°C ±100 ±20V
Switching Characteristics 25°C (unless otherwise specified)
Parameter Total Gate Charge (turn-on) Gate Emitter Charge (turn-on) Gate Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate Fall Recovery During Min. -Typ. 4100 Max. Units Conditions 400V Fig. 25°C 39A, 480V 15V, Energy losses include "tail" -diode reverse recovery. Fig. 150°C, Fig. 39A, 480V -VGE 15V, -Energy losses include "tail" diode reverse recovery. Measured from package -VGE Fig. 1.0MHz 25°C Fig. 125°C 25°C Fig. 200V 125°C 25°C Fig. 1200 125°C di/dt 200A/µs -A/µs 25°C Fig. 125°C
td(on) td(off) Eoff td(on) td(off) Cies Coes Cres di(rec)M/dt
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IRG4PC50FDPbF
Load Current
125°C sink 90°C drive specified Turn-on loss include effects reverse overy
rate
Frequenc
Fig. Typical Load Current Frequency
(Load Current IRMS fundamental)
r-to itte
1000
1000
r-to itte
r-to itte
itte
Fig. Typical Output Characteristics www.irf.com
Fig. Typical Transfer Characteristics
IRG4PC50FDPbF
axim ollector urrent
olle r-to-E itte olta
ture
Fig. Maximum Collector Current Case Temperature
Fig. Typical Collector-to-Emitter Voltage Junction Temperature
Therm
0.50
0.01 0.00001
0.000
0.001
0.01
ratio
Fig. Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case www.irf.com
IRG4PC50FDPbF
8000 Cies Cres Coes SHORTED
itte
Capacitance (pF)
6000
4000
2000
Collector-to-Emitter Voltage
Fig. Typical Capacitance Collector-to-Emitter Voltage
Fig. Typical Gate Charge Gate-to-Emitter Voltage
5.00
Total Switchig Losses (mJ)
4.50
Total Switchig Losses (mJ)
480V 25°C
480V
4.00
3.50
esistance
Junction perature
Fig. Typical Switching Losses Gate Resistance www.irf.com
Fig. Typical Switching Losses Junction Temperature
IRG4PC50FDPbF
r-to itte
Total Switchig Losses (mJ)
150°C 480V
1000
1000
Collector-to-Em itter Current
r-to-E itte olta
Fig. Typical Switching Losses Collector-to-Emitter Current
Fig. Turn-Off
Fig. Maximum Forward Voltage Drop Instantaneous Forward Current www.irf.com
IRG4PC50FDPbF
200V 125°C 25°C
(ns)
(A/µs)
1000
1000
Fig. Typical Reverse Recovery dif/dt
Fig. Typical Recovery Current dif/dt
1500
10000
1200
i(re
1000
1000
1000
Fig. Typical Stored Charge dif/dt www.irf.com
Fig. Typical di(rec)M/dt dif/dt
IRG4PC50FDPbF
Same type device .U.T.
430µF
(off)
t1+5µ
Fig. Test Circuit Measurement ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), td(off),
Fig. Test Waveforms Circuit Fig. 18a, Defining
Eoff, td(off),
CURRENT
AVEFORMS
td(on)
RECOVERY ENERG
Fig. Test Waveforms Circuit Fig. 18a,
Defining Eon, td(on),
Fig. Test Waveforms Circuit Fig. 18a,
Defining Erec, trr, Qrr,
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IRG4PC50FDPbF
Figure 18e. Macro Waveforms Figure 18a's Test Circuit
1000V
D.U.T.
480V
480V @25°C
Figure Clamped Inductive Load Test Circuit
Figure Pulsed Collector Current Test Circuit
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IRG4PC50FDPbF
Notes:
Repetitive rating: VGE=20V; pulse width limited maximum junction temperature (figure VCC=80%(VCES), VGE=20V, L=10µH, (figure Pulse width 80µs; duty factor 0.1%. Pulse width 5.0µs, single shot.
TO-247AC Package Outline
Dimensions shown millimeters (inches)
TO-247AC Part Marking Information
XAMPL CODE 5657 2000
ote: assem line position indicates "Lead-Free"
IONAL CODE
PART NUMB
035H
CODE 2000
Data specifications subject change without notice.
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Note: most current drawings please refer website http://www.irf.com/package/
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