Z-MOS Power MOSFET N-Channel Enhancement Mode NChannel Enhancemen

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Z-MOS Power MOSFET N-Channel Enhancement Mode NChannel Enhancemen

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IXZR16N60 IXZR16N60A/B
Z-MOS Power MOSFET
N-Channel Enhancement Mode NChannel Enhancement Mode Switch Mode MOSFET Capacitance Z-MOSMOSFET Process Optimized Operation High dv/dt Ideal Class Applications Nanosecond Switching
Symbol VDSS VDGR VGSM ID25 dv/dt Test Conditions
25°C 150°C 25°C 150°C; Continuous Transient 25°C 25°C, pulse width limited 25°C 25°C IDM, di/dt 100A/µs, VDSS, 150°C,
VDSS ID25 RDS(on)
18.0 0.44
Maximum Ratings
V/ns >200 V/ns
PDHS PDAMB RthJC RthJHS Symbol Test Conditions
25°C, Derate 4.4W/°C above 25°C 25°C
Characteristic Values 25°C unless otherwise specified) min. typ. max. 4.25 ±100
=125C Features
VDSS VGS(th) IGSS IDSS RDS(on) Tstg Weight
VGS, 250µ VDC, 0.8VDSS VGS=0
Isolated Substrate high isolation voltage (>2500V) excellent thermal transfer Increased temperature power
cycling capability IXYS advanced Z-MOS process gate charge capacitances easier drive faster switching RDS(on) Very insertion inductance (<2nH) beryllium oxide (BeO) other hazardous materials
0.437 15.2 +175
0.5ID25 Pulse test, 300µS, duty cycle 50V, 0.5ID25, pulse test
Advantages
High Performance Optimized high speed Common Source Package
Gate Source Drain Drain Source Gate Isolated Package, insulator required
1.6mm(0.063 from case
IXZR16N60 IXZR16N60A/B
Z-MOS Power MOSFET
Symbol Test Conditions Characteristic Values 25°C unless otherwise specified) min. Ciss Coss Crss Cstray Td(on) Td(off) Toff Source-Drain Diode Symbol Test Conditions
Repetitive; pulse width limited VGS=0 Pulse test, 300µs, duty cycle VDSS (External) Back Metal VDSS(max),
typ.
max. 1=G, 2=D, 60A: 1=G, 2=S, 60B: 1=D, 2=S,
1930 17.8 Characteristic Values 25°C unless otherwise specified) min. typ. max.
IXYS reserves right change limits, test conditions dimensions. IXYS MOSFETS covered more following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 6,404,065 6,583,505 6,710,463 6,727,585 6,731,002
IXZR16N60 IXZR16N60A/B
Z-MOS Power MOSFET
10000
Ciss
1000
Capacitiance
Coss
Crss
Volts
IXZ316N60 Capacitances verses
#dsIXZR16N60_A/B 07/04 2004 IXYS
IXYS Company
2401 Research Blvd., Suite Fort Collins, 80526 970-493-1901 Fax: 970-493-1903 Email: info@ixysrf.com Web: http://www.ixysrf.com

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