Z-MOS Power MOSFET N-Channel Enhancement Mode Switch Mode MOSFET

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Z-MOS Power MOSFET N-Channel Enhancement Mode Switch Mode MOSFET

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IXZR08N120 IXZR08N120A/B
Z-MOS Power MOSFET
N-Channel Enhancement Mode Switch Mode MOSFET Capacitance Z-MOSMOSFET Process Optimized Operation Ideal Class Applications
Symbol VDSS VDGR VGSM ID25 dv/dt Test Conditions
25°C 150°C 25°C 150°C; Continuous Transient 25°C 25°C, pulse width limited 25°C 25°C IDM, di/dt 100A/µs, VDSS, 150°C,
VDSS ID25 RDS(on)
1200
Maximum Ratings 1200 1200
V/ns >200 V/ns
PDHS PDAMB RthJC RthJHS
25°C, Derate 4.4W/°C above 25°C 25°C
Features
min. VDSS VGS(th) IGSS IDSS RDS(on) Tstg Weight
1.6mm(0.063 from case VGS, 250µ VDC, 0.8VDSS VGS=0 =125C
typ.
max. ±100 +175
1200
Isolated Substrate high isolation voltage (>2500V) excellent thermal transfer Increased temperature power
cycling capability IXYS advanced Z-MOS process gate charge capacitances easier drive faster switching RDS(on) Very insertion inductance (<2nH) beryllium oxide (BeO) other hazardous materials
0.5ID25 Pulse test, 300µS, duty cycle 0.5ID25, pulse test
10.1
Advantages
High Performance Optimized high speed Common Source Package
Gate Source Drain Drain Source Gate Easy mount-no insulators needed
IXZR08N120 IXZR08N120A/B
Z-MOS Power MOSFET
Symbol Test Conditions Characteristic Values 25°C unless otherwise specified) min. Ciss Coss Crss Cstray Td(on) Td(off) Toff Source-Drain Diode Symbol Test Conditions
Repetitive; pulse width limited IF=Is, VGS=0 Pulse test, 300µs, duty cycle VDSS (External) Back Metal VDSS(max),
typ.
max. 1=G, 2=D,3=S 120A: 1=G, 2=S, 120B: 1=D, 2=S,
1960 Characteristic Values 25°C unless otherwise specified) min. typ. max.
IXYS reserves right chang limits, test conditions dimensions. change limits, test conditions dimensions. IXYS MOSFETS covered more following U.S. patents: 4,835,592 4,860,072 4,850,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 6,404,065 6,583,505 6,710,463 6,727,585 6,731,002
IXZR08N120 IXZR08N120A/B
Z-MOS Power MOSFET
10000
1000
Ciss
Capacitance
Coss
Crss
1000 1200
Volts
IXZ308N120 Capacitances verses
#dsIXZR08N120_A/B 07/04 2004 IXYS
IXYS Company
2401 Research Blvd., Suite Fort Collins, 80526 970-493-1901 Fax: 970-493-1903 Email: info@ixysrf.com Web: http://www.ixysrf.com

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