SuperSOTTM-8 N-Channel enhancement mode power field effect transistors

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SuperSOTTM-8 N-Channel enhancement mode power field effect transistors

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NDH833N N-Channel Enhancement Mode Field Effect Transistor
SuperSOTTM-8 N-Channel enhancement mode power field effect transistors produced using National's proprietary, high cell density, DMOS technology. This very high density process especially tailored minimize on-state resistance provide superior switching performance. These devices particularly suited voltage applications such battery powered circuits portable electronics where fast switching, in-line power loss, resistance transients needed.
Octorber 1996 PRELIMINARY
Features
RDS(ON) 0.020 RDS(ON) 0.025 Proprietary SuperSOTTM-8 package design using copper lead frame superior thermal electrical capabilities. High density cell design extremely RDS(ON). Exceptional on-resistance maximum current capability.
Absolute Maximum Ratings
Symbol Parameter VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Maximum Power Dissipation
25°C unless otherwise note
NDH833N
(Note
Units
(Note (Note (Note
TJ,TSTG
Operating Storage Temperature Range
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W °C/W
NDH833N Rev.
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Symbol Parameter Conditions Units CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current 55°C Gate Body Leakage, Forward Gate Body Leakage, Reverse
(Note
-100
VDS= VGS, 125°C 125°C 0.62 0.015
CHARACTERISTICS
Gate Threshold Voltage
0.02
Static Drain-Source On-Resistance
0.022 0.036 0.018 0.025 1540
ID(on) Ciss Coss Crss tD(on) tD(off)
On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn Delay Time Turn Rise Time Turn Delay Time Turn Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note VGEN RGEN
NDH833N Rev.
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Symbol
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
Parameter
Conditions
Units
DRAIN-SOURCE DIODE CHARACTERISTICS MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage
(Note
0.65
+RCA
DS(ON)@T
Typical using board layouts shown below 4.5"x5" FR-4 still environment: 70oC/W when mounted cpper. 125oC/W when mounted 0.026 copper. 135oC/W when mounted 0.005 copper.
Scale letter size paper Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%.
NDH833N Rev.
Typical Electrical Characteristics
DRAIN-SOURCE CURRENT DRAIN-SOURCE ON-RESISTANCE
DS(on) NORMALIZED
=4.5V
2.0V
DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
DRAIN-SOURCE ON-RESISTANCE
DS(ON) NORMALIZED DRAIN-SOURCE ON-RESISTANCE
7.1A
DS(on) NORMALIZED
4.5V
125°C
25°C
-55°C
JUNCTION TEMPERATURE (°C)
DRAIN CURRENT
Figure On-Resistance Variation with Temperature.
Figure On-Resistance Variation with Drain Current Temperature.
5.0V
DRAIN CURRENT
=-55°C
25°C 125°C
NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE
250µA
GATE SOURCE VOLTAGE
JUNCTION TEMPERATURE (°C)
Figure Transfer Characteristics.
Figure Gate Threshold Variation with Temperature.
NDH833N Rev.
Typical Electrical Characteristics (continued)
DRAIN-SOURCE BREAKDOWN VOLTAGE 1.12
REVERSE DRAIN CURRENT
250µA
1.08
125°C 25°C
NORMALIZED
1.04
0.01
-55°C
0.96
0.001
0.92
0.0001
JUNCTION TEMPERATURE (°C)
BODY DIODE FORWARD VOLTAGE
Figure Breakdown Voltage Variation with Temperature.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
5000 3000 2000 CAPACITANCE (pF)
GATE-SOURCE VOLTAGE
7.1A =10V
1000
DRAIN SOURCE VOLTAGE
GATE CHARGE (nC)
Figure Capacitance Characteristics.
Figure Gate Charge Characteristics.
d(on)
toff
td(off)
VOUT
INVERTED
I10%
PULSE WIDTH
Figure Switching Test Circuit.
Figure Switching Waveforms.
NDH833N Rev.
Typical Electrical Thermal Characteristics (continued)
STEADY-STATE POWER DISSIPATION TRANSCONDUCTANCE (SIEMENS)
5.0V
-55°C
25°C
125°C
4.5"x5" FR-4 Board Still
DRAIN CURRENT
COPPER MOUNTING AREA
Figure Transconductance Variation with Drain Current Temperature.
Figure SuperSOTTM-8 Maximum Steady-State Power Dissipation versus Copper Mounting Area.
DRAIN CURRENT 0.03 0.01
STEADY-STATE DRAIN CURRENT
4.5"x5" FR-4 Board Still 4.5V
4.5V SINGLE PULSE Note 25°C
COPPER MOUNTING AREA
DRAIN-SOURCE VOLTAGE
Figure Maximum Steady-State Drain Current versus Copper Mounting Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
Figure Maximum Safe Operating Area.
0.05
0.05 0.02
r(t) Note
P(pk)
0.03 0.02 0.01 0.0001
0.01 Single Pulse
Duty Cycle,
0.01 TIME (sec)
0.001
Figure Transient Thermal Response Curve.
Note: Thermal characterization performed using conditions described note Transient thermal response will change depending circuit board design.
NDH833N Rev.

SuperSOTTM-8 N-Channel enhancement mode power field effect transistors

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