These N-Channel enhancement mode power field effect transistors produc

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These N-Channel enhancement mode power field effect transistors produc

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NDH831N N-Channel Enhancement Mode Field Effect Transistor
These N-Channel enhancement mode power field effect transistors produced using National's proprietary, high cell density, DMOS technology. This very high density process especially tailored minimize on-state resistance provide superior switching performance. These devices particularly suited voltage applications such battery powered circuits portable electronics where fast switching, in-line power loss, resistance transients needed.
1996 PRELIMINARY
Features
5.6A, 20V. RDS(ON) 0.035 4.5V RDS(ON) 0.045 2.7V. High density cell design extremely RDS(ON). Enhanced SuperSOTTM-8 small outline surface mount package with high power current handling capability.
SuperSOTTM-8 Absolute Maximum Ratings 25°C unless otherwise noted
Symbol Parameter VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Maximum Power Dissipation
(Note (Note (Note (Note
NDH83120
Units
TJ,TSTG
Operating Storage Temperature Range
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W °C/W
NDH831N.SAM
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Symbol Parameter Conditions Units CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current 55°C Gate Body Leakage, Forward Gate Body Leakage, Reverse
(Note
-100
VDS= VGS, 125°C 125°C 0.35 0.025 0.035 0.031
CHARACTERISTICS
Gate Threshold Voltage
0.035 0.63 0.045
Static Drain-Source On-Resistance
ID(on) Ciss Coss Crss tD(on) tD(off)
On-State Drain Current
Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note Turn Delay Time Turn Rise Time Turn Delay Time Turn Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VGEN RGEN 19.5
NDH831N.SAM
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Symbol
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
Parameter
Conditions
Units
DRAIN-SOURCE DIODE CHARACTERISTICS MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage
(Note
0.75
DS(ON)@T
Typical using board layouts shown below 4.5"x5" FR-4 still environment: 70oC/W when mounted copper. 125oC/W when mounted 0.026 copper. 135oC/W when mounted 0.005 copper.
Scale letter size paper
Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%.
NDH831N.SAM
Typical Electrical Characteristics
DRAIN-SOURCE CURRENT
=4.5V
DS(on) NORMALIZED DRAIN-SOURCE ON-RESISTANCE
2.0V
DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Gate Voltage Drain Current.
DS(ON) NORMALIZED
5.6A
DS(on) NORMALIZED
4.5V
DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE ON-RESISTANCE
125°C
25°C
-55°C
JUNCTION TEMPERATURE (°C)
DRAIN CURRENT
Figure On-Resistance Variation with Temperature.
Figure On-Resistance Variation with Drain Current Temperature.
NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE
5.0V
DRAIN CURRENT
250µA
-55°C
125°C 25°C
JUNCTION TEMPERATURE (°C)
GATE SOURCE VOLTAGE
Figure Transfer Characteristics.
Figure Gate Threshold Variation with Temperature.
NDH831N.SAM
Typical Electrical Characteristics
NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE 1.12
REVERSE DRAIN CURRENT
250µA
1.08
1.04
125°C
25°C
-55°C
0.01
0.96
0.001
0.92
JUNCTION TEMPERATURE (°C)
0.0001
BODY DIODE FORWARD VOLTAGE
Figure Breakdown Voltage Variation with Temperature.
Figure Body Diode Forward Voltage Variation with Current Temperature.
3000 2000 CAPACITANCE (pF) GATE-SOURCE VOLTAGE
5.6A
1000
DRAIN SOURCE VOLTAGE
GATE CHARGE (nC)
Figure Capacitance Characteristics.
Figure Gate Charge Characteristics.
TRANSCONDUCTANCE (SIEMENS)
5.0V
-55°C 25°C
125°C
DRAIN CURRENT
Figure Transconductance Variation with Drain Current Temperature.
NDH831N.SAM
Typical Thermal Characteristics
STEADY-STATE DRAIN CURRENT
STEADY-STATE POWER DISSIPATION
4.5"x5" FR-4 Board Still
4.5"x5" FR-4 Board Still 4.5V
COPPER MOUNTING AREA
COPPER MOUNTING AREA
Figure SOT-8 Maximum Steady-State Power Dissipation versus Copper Mounting Area.
DRAIN CURRENT 0.03 0.01
Figure Maximum Steady-State Drain Current versus Copper Mounting Area.
4.5V SINGLE PULSE Note 25°C
DRAIN-SOURCE VOLTAGE
Figure Maximum Safe Operating Area.
TRANSIENT THERMAL RESISTANCE 0.05 0.03 0.02 0.01 0.0001
0.02 0.01 Single Pulse 0.05
r(t), NORMALIZED EFFECTIVE
r(t) Note
P(pk)
Duty Cycle, 0.01 TIME (sec)
0.001
Figure Transient Thermal Response Curve.
Note: Thermal characterization performed using conditions described note Transient thermal response will change depending circuit board design.
NDH831N.SAM
NDH831N.SAM

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