Area flat 2.54 spacing Cathode 3.85 3.35 Chip position

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Area flat 2.54 spacing Cathode 3.85 3.35 Chip position

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GaAIAs-IR-Lumineszenzdiode (880 GaAIAs Infrared Emitter (880
Area flat
2.54 spacing
Cathode 3.85 3.35
Chip position
fex06306
GEX06306
wenn nicht anders angegeben/Dimensions unless otherwise specified.
Wesentliche Merkmale GaAIAs-IR-Lumineszenzdiode, hergestellt Schmelzepitaxieverfahren Enge Toleranz: Bauteiloberkante Gute spektrale Anpassung Sehr plane Anwendungen
Lichtschranken Gleich-
Features GaAIAs infrared emitting diode, fabricated liquid phase epitaxy process Small tolerance: Chip surface case surface Good spectral match silicon photodetectors Plane surface Same package Applications
Light-reflection switches steady
Wechsellichtbetrieb
varying intensity (max. kHz)
Fibre optic transmission
Type
Bestellnummer Ordering Code Q62703-Q516
Package plan, klares violettes 2.54-mm-Raster (1/10''), Anodenkennzeichnung: package 3/4), plane violet-colored transparent epoxy resin, solder tabs lead spacing 2.54 (1/10''), anode marking: short lead.
Semiconductor Group
1999-02-04
Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- Lagertemperatur Operating storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Forward current Surge current Verlustleistung Power dissipation freie max. Thermal resistance, lead length between package bottom PC-board max. Kennwerte Characteristics Bezeichnung Description Strahlung Wavelength peak emission Spektrale Bandbreite Imax, Symbol Symbol peak Wert Value Einheit Unit Symbol Symbol Wert Value Einheit Unit
Top; Tstg IFSM Ptot RthJA
Spectral bandwidth Imax Abstrahlwinkel Half angle Aktive Active chip area Abmessungen aktiven Dimension active chip area Abstand Distance chip front case surface 0.16 Grad deg.
Semiconductor Group
1999-02-04
Kennwerte Characteristics (cont'd) Bezeichnung Description Schaltzeiten, Switching times, from from to10 Capacitance Forward voltage Sperrstrom Reverse current Total radiant flux Temperaturkoeffizient bzw. Temperature coefficient Temperaturkoeffizient Temperature coefficient Temperaturkoeffizient peak, Temperature coefficient peak, Symbol Symbol Wert Value 0.6/0.5 Einheit Unit
1.8) 3.8) 0.01
0.25
mV/K nm/K
Achsrichtung gemessen einem Raumwinkel 0.01 Grouping radiant intensity axial direction solid angle 0.01 Bezeichnung Description Radiant intensity Radiant intensity Symbol Werte Values Einheit Unit
3.15
mW/sr
typ.
mW/sr
Semiconductor Group
1999-02-04
Relative spectral emission Irel
OHR00877
Radiant intensity
(IF)
OHR00878
Single pulse,
(100mA)
Max. permissible forward current (TA)
OHR00880
1000
Forward current, (VF) Single pulse,
OHR00881
Permissible pulse handling capability duty cycle parameter
OHR00886
Forward current versus lead length between package bottom PC-board (I),
OHR00949
0.005 0.01 0.02 0.05
Radiation characteristics Irel
OHR01893
Semiconductor Group
1999-02-04

Area flat 2.54 spacing Cathode 3.85 3.35 Chip position

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