EPITAXIAL SILICON POWER TRANSISTORS BD233 BD235 BD237 BD234

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EPITAXIAL SILICON POWER TRANSISTORS BD233 BD235 BD237 BD234

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IS/ISO 9002 Lic# QSC/L- 000019.3
EPITAXIAL SILICON POWER TRANSISTORS
BD233 BD235 BD237
BD234 BD236 BD238
TO126 Plastic Package
Intended Medium Power Linear Switching Applications
ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage (RBE=1K) Emitter Base Voltage Collector Current Collector Peak Current Total Dissipation Total Dissipation Derate above Operating Storage Junction Temperature Range THERMAL CHARACTERISTICS Junction Case Junction Ambient free (j-c) (j-a) SYMBOL VCBO VCEO VCER VEBO Tstg BD233 BD234 BD235 BD236 1.25 +150 BD237 BD238 UNIT
ELECTRICAL CHARACTERISTICS unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION ICBO VCB=45V, IE=0 BD233/234 Collector Current BD235/236 VCB=60V, IE=0 VCB=100V, IE=0 BD237/238 VCB=45V, IE=0 BD233/234 VCB=60V, IE=0 BD235/236 VCB=100V, IE=0 BD237/238 Emitter Current Collector Emitter Sustaining Voltage IEBO *VCEO (sus) VEB=5V, IC=0 IC=0.1A, IB=0 BD233/234 BD235/236 BD237/238 IC=1.0A, IB=0.1A IC=1.0A, VCE=2V
UNIT
Collector Emitter Saturation Voltage Base Emitter Voltage
*VCE (sat) *VBE (on)
Data Sheet
Page
EPITAXIAL SILICON POWER TRANSISTORS
BD233 BD235 BD237
BD234 BD236 BD238
TO126 Plastic Package
ELECTRICAL CHARACTERISTICS unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION IC=150mA, VCE=2V *hFE Current Gain IC=1.0A, VCE=2V IC=250mA, VCE=10V Current Gain Bandwidth Product *hFE1 hFE2 Matched Pairs *Pulsed Pulse Duration=300µs, Duty Cycle=1.5% IC=150mA, VCE=2V
UNIT
Data Sheet
Page
BD233 BD235 BD237
BD234 BD236 BD238
TO126 Plastic Package TO-126 (SOT-32) Plastic Package
10.5 0.49
10.8 0.75
2.25 TYP. TYP. 15.7 TYP. 1.27 TYP. 3.75 TYP.
Configuration Emitter Collector Base
TYP. dimensions
TO-126 TUBE PACKING
±0.50 532.00 ±0.10 THRU NOS) MARKING SIDE -1.00 390.00 ±0.05 THRU NOS) 0.65 71.00 3.70 MARKING SIDE
0.50 12.00
AMMO PACK SIZE
±0.20 33.00 1.30
1.00
1.20
92.0
Label
10.0
SECTION
75.0
Tubes/Ammo Pack 1000 Pcs./Ammo Pack
PRINTING AREA ±0.1
66382 ANTISTATICz
20.0
ARROW
GENERAL TOLERANCE 0.01 30.01 120.01 ABOVE ±0.1 ±0.2 ±0.3 ±0.5 ±0.8 ANGULAR
-0.1
11.0
-0.1
3.35
MATL:- BLACK WITH ANTISTATIC DIPPING
PCS/TUBE)
SYMBOL
dimensions
Notes: print black. text Helvetia medium font.
Packing Details
PACKAGE Details TO-126 Bulk TO-126 Tube pcs/ tube STANDARD PACK Weight/Qty Size 7.5" 7.5" 3.7" 21.5" Data Sheet pcs/ polybag INNER CARTON Size 13.5" OUTER CARTON Page
-0.1
±0.10 11.95 +0.1 R2.5
Notes
BD233 BD235 BD237
BD234 BD236 BD238
TO126 Plastic Package
Disclaimer
product information selection guides facilitate selection CDIL's Discrete Semiconductor Device(s) best suited application your product(s) your requirement. recommended that completely review Data Sheet(s) confirm that Device(s) meet functionality parameters your application. information furnished Data Sheet CDIL Site/CD believed accurate reliable. CDIL however, does assume responsibility inaccuracies incomplete information. Furthermore, CDIL does assume liability whatsoever, arising application CDIL product; neither does convey license under patent rights rights others. These products designed life saving/support appliances systems. CDIL customers selling these products (either individual Discrete Semiconductor Devices incorporated their products), life saving/support appliances systems applications their risk CDIL will responsible damages resulting from such sale(s). CDIL strives continuous improvement reserves right change specifications products without prior notice.
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C-120 Naraina Industrial Area, Delhi 028, India. Telephone 91-11-2579 6150 91-11-2579 9569,2579 5290 e-mail sales@cdil.com www.cdil.com www.cdilsemi.com
BD233_238Rev_1221102E
Data Sheet
Page

EPITAXIAL SILICON POWER TRANSISTORS BD233 BD235 BD237 BD234

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