BPV11 very high sensitive silicon epitaxial planar phototransistor sta
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BPV11
BPV11 very high sensitive silicon epitaxial planar phototransistor standard plastic package. waterclear epoxy lens device sensitive visible near infrared radiation. viewing angle ±15° makes insensible ambient straylight. base terminal available enable biasing sensitivity control.
12785
Features
Very high photo sensitivity Standard package with clear lens Angle half sensitivity Base terminal available Lead-free component Component accordance RoHS 2002/95/EC WEEE 2002/96/EC
Applications
Detector industrial electronic circuitry, measurement control
Absolute Maximum Ratings
Tamb unless otherwise specified Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector current Collector peak current Total Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/ Ambient from body tp/T 0.5, Tamb Test condition Symbol VCBO VCEO VEBO Ptot Tstg RthJA Value Unit
Document Number 81504 Rev. 1.4, 08-Mar-05
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BPV11
Vishay Semiconductors Electrical Characteristics
Tamb unless otherwise specified Parameter Collector Emitter Breakdown Voltage Collector-emitter dark current Current Gain Collector-emitter capacitance Collector base capacitance Test condition MHz, MHz, Symbol V(BR)CEO ICEO CCEO CCBO Typ. Unit
Optical Characteristics
Tamb unless otherwise specified Parameter Collector Light Current Angle Half Sensitivity Wavelength Peak Sensitivity Range Spectral Bandwidth Collector Emitter Saturation Voltage Turn-On Time Turn-Off Time Cut-Off Frequency mW/cm2, Test condition mW/cm2, Symbol VCEsat toff Typ. Unit
Typical Characteristics (Tamb unless otherwise specified)
Ptot -Total Power Dissipation Collector Dark Current
CE=10V
RthJA
8249
8300
Tamb Ambient Temperature(°C
Tamb Ambient Temperature
Figure Total Power Dissipation Ambient Temperature
Figure Collector Dark Current Ambient Temperature
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Document Number 81504 Rev. 1.4, 08-Mar-05
BPV11
Relative Collector Current
CE=5V
Amplification
mW/cm
8250
0.01
8239
Tamb Ambient Temperature
Collector Current
Figure Relative Collector Current Ambient Temperature
Figure Amplification Collector Current
Collector Light Current
Collector Base Capacitance
f=1MHz
=950nm
Collector Base Voltage
0.01 0.01
8244
8246
Irradiance
Figure Collector Light Current Irradiance
Figure Collector Base Capacitance Collector Base Voltage
Collector Light Current
Collector Emitter Capacitance
f=1MHz
=950nm
=1mW/cm mW/cm mW/cm 0.1mW/cm
0.05mW/cm 0.02mW/cm
Collector Emitter Voltage
8272
Collector Emitter Voltage
8247
Figure Collector Light Current Collector Emitter Voltage
Figure Collector Emitter Capacitance Collector Emitter Voltage
Document Number 81504 Rev. 1.4, 08-Mar-05
www.vishay.com
BPV11
8253
toff -Turn Turn Time
CE=5V RL=100 =950nm
toff
Collector Current
Figure Turn On/Turn Time Collector Current
)rel Relative Spectral Sensitivity
1000
8348
Wavelength
Figure Relative Spectral Sensitivity Wavelength
Srel Relative Sensitivity
8248
Figure Relative Radiant Sensitivity Angular Displacement
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Document Number 81504 Rev. 1.4, 08-Mar-05
BPV11
Vishay Semiconductors Package Dimensions
9612200
Document Number 81504 Rev. 1.4, 08-Mar-05
www.vishay.com
BPV11
Vishay Semiconductors Ozone Depleting Substances Policy Statement
policy Vishay Semiconductor GmbH Meet present future national international statutory requirements. Regularly continuously improve performance products, processes, distribution operatingsystems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances (ODSs). Montreal Protocol (1987) London Amendments (1990) intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. Vishay Semiconductor GmbH been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency (EPA) Council Decision 88/540/EEC 91/690/EEC Annex (transitional substances) respectively. Vishay Semiconductor GmbH certify that semiconductors manufactured with ozone depleting substances contain such substances.
reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer Vishay Semiconductors products unintended unauthorized application, buyer shall indemnify Vishay Semiconductors against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: (0)7131 2831, number: (0)7131 2423
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Document Number 81504 Rev. 1.4, 08-Mar-05
Legal Disclaimer Notice
Vishay
Notice
Specifications products displayed herein subject change without notice. Vishay Intertechnology, Inc., anyone behalf, assumes responsibility liability errors inaccuracies. Information contained herein intended provide product description only. license, express implied, estoppel otherwise, intellectual property rights granted this document. Except provided Vishay's terms conditions sale such products, Vishay assumes liability whatsoever, disclaims express implied warranty, relating sale and/or Vishay products including liability warranties relating fitness particular purpose, merchantability, infringement patent, copyright, other intellectual property right. products shown herein designed medical, life-saving, life-sustaining applications. Customers using selling these products such applications their risk agree fully indemnify Vishay damages resulting from such improper sale.
Document Number: 91000 Revision: 08-Apr-05
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