271, Area flat 2.54 spacing Cathode Approx. weight

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271, Area flat 2.54 spacing Cathode Approx. weight

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GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
271,
Area flat
2.54 spacing
Cathode Approx. weight
Chip position
GEX06239
Cathode
spacing 2.54
Area flat Chip position
GEO06645
wenn nicht anders angegeben/Dimensions unless otherwise specified.
Wesentliche Merkmale GaAs-IR-LED, hergestellt Schmelzepitaxieverfahren Hohe Hohe Impulsbelastbarkeit Lange Gruppiert lieferbar 300, Anwendungen IR-Fernsteuerung Fernseh- Videorecordern, Lichtdimmern Lichtschranken Gleich- Wechsellichtbetrieb Data Sheet
Features GaAs infrared emitting diode, fabricated liquid phase epitaxy process High reliability High pulse handling capability long leads Available groups Same package 300, Applications remote control hi-fi TV-sets, video tape recorders, dimmers Remote control various equipment Photointerrupters
1999-05-27
fex06628
14.0 13.0
11.4 11.0
Opto Semiconductors 271,
Type LD271 LD271 Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- Lagertemperatur Operating storage temperature range Sperrspannung Reverse voltage Forward current Surge current Verlustleistung Power dissipation Thermal resistance Symbol Symbol Wert Value Einheit Unit Bestellnummer Ordering Code Q62703-Q148 Q62703-Q833 Q62703-Q256 Q62703-Q838 Package 3/4), 2.54-mm-Raster (1/10'') package 3/4), grey colored epoxy resin lens, solder tabs lead spacing 2.54 (1/10'')
Top; Tstg IFSM Ptot RthJA
Data Sheet
1999-05-27
Opto Semiconductors 271,
Kennwerte Characteristics Bezeichnung Description Strahlung Wavelength peak emission Spektrale Bandbreite Imax Spectral bandwidth Imax Abstrahlwinkel Half angle Aktive Active chip area Abmessungen aktive Dimensions active chip area Abstand Linsenscheitel Distance chip front lens Schaltzeiten, Switching times, from from Capacitance Forward voltage Sperrstrom, Reverse current Total radiant flux Temperaturkoeffizient bzw. Temperature coefficient Temperaturkoeffizient Temperature coefficient Temperaturkoeffizient Temperature coefficient Symbol Symbol peak Wert Value Einheit Unit
0.25
Grad deg.
1.30 1.5) 1.90 2.5) 0.01
0.55
mV/K nm/K
Data Sheet
1999-05-27
Opto Semiconductors 271,
Gruppierung Achsrichtung gemessen einem Raumwinkel 0.01 Grouping radiant intensity axial direction solid angle 0.01 Bezeichnung Description Symbol Symbol Wert Value Radiant intensity Einheit Unit
typ.
mW/sr mW/sr
Relative spectral emission Irel
OHRD1938
Radiant intensity
(IF)
OHR01038
Single pulse,
Max. permissible forward current (TA)
OHO00364
(100
1000
1060
Data Sheet
1999-05-27
Opto Semiconductors 271,
Forward current (VF), single pulse,
OHR01041
Permissible pulse handling capability duty cycle parameter
OHR00257
0.005 0.01 0.02
typ.
max.
0.05
Radiation characteristics Irel
OHR01879
Data Sheet
1999-05-27

271, Area flat 2.54 spacing Cathode Approx. weight

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