Data Sheet September 1998 File Number 480.4 General Purpose High
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CA3081, CA3082
Data Sheet September 1998 File Number 480.4
General Purpose High Current Transistor Arrays
CA3081 CA3082 consist seven high current 100mA) silicon transistors common monolithic substrate. CA3081 connected common emitter configuration CA3082 connected common collector configuration. CA3081 CA3082 capable directly driving seven segment displays, light emitting diode (LED) displays. These types also well suited variety other drive applications, including relay control thyristor firing.
Features
CA3081 Common Emitter Array CA3082 Common Collector Array Directly Drive Seven Segment Incandescent Displays Light Emitting Diode (LED) Display Transistors Permit Wide Range Applications Either Common Emitter (CA3081) Common Collector (CA3082) Configuration High 100mA (Max) VCESAT 50mA) 0.4V (Typ)
Ordering Information
PART NUMBER (BRAND) CA3081 CA3081F CA3081M (3081) CA3081M96 (3081) CA3082 CA3082M (3082) CA3082M96 (3082) TEMP. RANGE (oC) PACKAGE PDIP CERDIP SOIC SOIC Tape Reel PDIP SOIC SOIC Tape Reel PKG. E16.3 F16.3 M16.15 M16.15 E16.3 M16.15 M16.15
Applications
Drivers Incandescent Display Devices Displays Relay Control Thyristor Firing
Pinouts
CA3081 COMMON EMITTER CONFIGURATION (PDIP, CERDIP, SOIC) VIEW
SUBSTRATE
CA3082 COMMON COLLECTOR CONFIGURATION (PDIP, SOIC) VIEW
SUBSTRATE
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. http://www.intersil.com 407-727-9207 Copyright Intersil Corporation 1999
CA3081, CA3082
Absolute Maximum Ratings
25oC
Thermal Information
Thermal Resistance (Typical, Note (oC/W) (oC/W) CERDIP Package. PDIP Package SOIC Package Maximum Power Dissipation (Any Transistor) 500mW Maximum Junction Temperature (Ceramic Package) .175oC Maximum Junction Temperature (Plastic Package) .150oC Maximum Storage Temperature Range -65oC 150oC Maximum Lead Temperature (Soldering 10s) 300oC (SOIC Lead Tips Only)
Collector-to-Emitter Voltage (VCEO) .16V Collector-to-Base Voltage (VCBO) Collector-to-Substrate Voltage (VCIO Note Emitter-to-Base Voltage (VEBO) Collector Current (IC) 100mA Base Current (IB) 20mA
Operating Conditions
Temperature Range -55oC 125oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTES: collector each transistor CA3081 CA3082 isolated from substrate integral diode. substrate must connected voltage which more negative than collector voltage order maintain isolation between transistors provide normal transistor action. avoid undesired coupling between transistors, substrate terminal should maintained either signal (AC) ground. suitable bypass capacitor used establish signal ground. measured with component mounted evaluation board free air.
Electrical Specifications
PARAMETER
Equipment Design 25oC SYMBOL V(BR)CBO V(BR)CIO V(BR)CEO V(BR)EBO TEST CONDITIONS 500µA, 500µA, 1mA, 500µA 0.5V, 30mA 0.8V, 50mA 0.87 UNITS
Collector-to-Base Breakdown Voltage Collector-to-Substrate Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Forward Current Transfer Ratio
Base-to-Emitter Saturation Voltage (Figure Collector-to-Emitter Saturation Voltage CA3081, CA3082 CA3081 (Figure CA3082 (Figure Collector Cutoff Current Collector Cutoff Current
VBESAT VCESAT
30mA, 30mA, 50mA, 50mA,
0.27
ICEO ICBO
10V, 10V,
Typical Read Driver Applications
CA3082 (COMMON COLLECTOR) (NOTE) LIGHT EMITTING DIODE (LED) 40736R
SEGMENT INCANDESCENT DISPLAY (DR2000 SERIES EQUIVALENT) FROM DECODER CA3081 (COMMON EMITTER)
NOTE: Resistance determined relationship: Where: Input Pulse Voltage Forward Voltage Drop Across Diode FIGURE SCHEMATIC DIAGRAM SHOWING TRANSISTOR CA3082 DRIVING LIGHT EMITTING DIODE (LED)
FIGURE SCHEMATIC DIAGRAM SHOWING TRANSISTOR CA3081 DRIVING SEGMENT INCANDESCENT DISPLAY
CA3081, CA3082 Typical Performance Curves
BASE-TO-EMITTER SATURATION VOLTAGE FORWARD CURRENT TRANSFER RATIO (hFE) 25oC 25oC
70oC
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
FIGURE FORWARD CURRENT TRANSFER RATIO COLLECTOR CURRENT
25oC COLLECTOR-TO-EMITTER SATURATION VOLTAGE
FIGURE BASE-TO-EMITTER SATURATION VOLTAGE COLLECTOR CURRENT
COLLECTOR-TO-EMITTER SATURATION VOLTAGE MAXIMUM 70oC
MAXIMUM
TYPICAL
TYPICAL
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
FIGURE COLLECTOR-TO-EMITTER SATURATION VOLTAGE COLLECTOR CURRENT
FIGURE COLLECTOR-TO-EMITTER SATURATION VOLTAGE COLLECTOR CURRENT
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil semiconductor products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
information regarding Intersil Corporation products, site http://www.intersil.com
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