Medium Power Bipolar Transistors High performance, frequency devi
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BC635
Medium Power Bipolar Transistors
High performance, frequency devices typically with current ratings power dissipation. silicon planar epitaxial transistors. Driver stages audio amplifier application.
TO-92 Plastic Package
Dimensions
Minimum 4.32 4.45 3.18 0.41 0.35 1.14 12.70
Maximum 5.33 5.20 4.19 0.55 0.50
1.40 1.53 Dimensions Millimetres
Configuration: Base Collector Emitter
Page
13/05/08 V1.1
BC635
Medium Power Bipolar Transistors
Absolute Maximum Ratings 25°C)
Description Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation 25°C Derate Above 25°C Power Dissipation 25°C Derate Above 25°C Operating Storage Junction Temperature Range Thermal Resistance From Junction Case From Junction Ambient (j-c) (j-a) °C/W Symbol VCBO VCEO VEBO BC635 2.75 +150 mW/°C mW/°C Unit
Tstg
Electrical Characteristics 25°C unless otherwise specified)
Description Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Symbol VCEO* VCBO VEBO ICBO (on)* (sat)* Test Condition 10mA, 100µA, 10µA, 30V, Collector Current 125°C 30V, 500mA, 500mA, 50mA 5mA, 150mA, Current Gain hFE* Group-10 Group-16 500mA, Dynamic Characteristics Transistors Frequency Output Capacitance Input Capacitance 50mA, 100MHz 10V, 1MHz 0.5V, 1MHz (Typical) (Typical) (Typical) TBC635 >5.0 <100 <1.0 <0.5 Units
Base Emitter Voltage Collector Emitter Saturation Voltage
*Pulse Test Pulse Width 300µs, Duty Cycle
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13/05/08 V1.1
BC635
Medium Power Bipolar Transistors
Specifications
VCEO Maximum Maximum Minimum 150mA (Sat) Maximum 500mA Package (Pin Out) TO-92 Type Part Number
BC635
Page
13/05/08 V1.1
BC635
Medium Power Bipolar Transistors
Notes:
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13/05/08 V1.1
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