Bipolar Transistors General Purpose Silicon Planar Epitaxial Ampl

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Bipolar Transistors General Purpose Silicon Planar Epitaxial Ampl

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BC182B
Bipolar Transistors
General Purpose Silicon Planar Epitaxial Amplifier Transistors.
TO-92 Plastic Package
Dimensions
Minimum 4.32 4.45 3.18 0.41 0.35 1.14 12.70 1.982
Maximum 5.33 5.20 4.19 0.55 0.50
1.40 1.53 2.082
Dimensions Millimetres
Configuration: Emitter Base Collector
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10/05/08 V1.1
BC182B
Bipolar Transistors
Absolute Maximum Ratings 25°C unless specified otherwise)
Description Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation 25°C Derate Above 25°C Power Dissipation 25°C Derate Above 25°C Operating Storage Junction Temperature Range Symbol VCEO VCBO VEBO Value mW/°C mW/°C Unit
Tstg
Electrical Characteristics 25°C unless specified otherwise)
Description Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Cut Current Emitter-Cut Current Symbol VCEO VCBO VEBO ICBO IEB0 Test Condition 2mA, 10µA, 100µA, 50V, 10µA, Current Gain 2mA, 100mA, Collector Emitter Saturation Voltage Base Emitter Saturation Voltage (sat) (sat) 10mA, 0.5mA 100mA, 5.0mA* 100mA, 5mA* 100µA, 2.0mA, 100mA, Minimum Typical 0.07 0.62 0.83 0.25 Maximum Unit
Base Emitter Voltage
(on)
0.55
*Pulse Condition: 300s, Duty Cycle 2.0%.
Page
10/05/08 V1.1
BC182B
Bipolar Transistors
Electrical Characteristics 25°C unless specified otherwise)
Description Dynamic Characteristics 0.5mA, 100MHz 10mA, 5.0V 100MHz 10V, 1MHz 0.5V, 1MHz 2mA, 1KHz 2mA, 2kW, 1kHz 200Hz Symbol Test Condition Minimum Typical Maximum Unit
Current Gain Bandwidth Product
Output Capacitance Input Capacitance
|hfe|
Small Signal Current Gain
Noise Figure
Specifications
VCEO VCBO Maximum Minimum Minimum (MHz) Ptot (mW) Package TO-92 Part Number BC182B
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10/05/08 V1.1
BC182B
Bipolar Transistors
Notes:
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10/05/08 V1.1

Bipolar Transistors General Purpose Silicon Planar Epitaxial Ampl

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