IRFR3303PbF IRFU3303PbF Ultra On-Resistance Surface Mount (IRFR33
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95070A
IRFR3303PbF IRFU3303PbF
Ultra On-Resistance Surface Mount (IRFR3303) Straight Lead (IRFU3033) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free
HEXFET® Power MOSFET
VDSS RDS(on) 0.031
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques achieve extremely on-resistance silicon area. This benefit, combined with fast switching speed ruggedized device design that HEXFET Power MOSFETs well known for, provides designer with extremely efficient reliable device wide variety applications. D-Pak designed surface mounting using vapor phase, infrared, wave soldering techniques. straight lead version (IRFU series) through-hole mounting applications. Power dissipation levels watts possible typical surface mount applications.
D-Pak TO-252AA
I-Pak TO-251AA
Absolute Maximum Ratings
Parameter
25°C 100°C 25°C dv/dt TSTG Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Soldering Temperature, seconds
Max.
0.45 (1.6mm from case
Units
W/°C V/ns
Thermal Resistance
Parameter
Junction-to-Case Junction-to-Ambient (PCB mount)** Junction-to-Ambient
Typ.
Max.
Units
°C/W
www.irf.com
12/14/04
IRFR/U3303PbF
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min.
Typ. 0.032
Max. Units Conditions 250µA V/°C Reference 25°C, 0.031 10V, VGS, 250µA 25V, 30V, 24V, 150°C -100 -20V 10V, Fig. 0.8, Fig. Between lead, (0.25in.) from package center contact 1.0MHz, Fig.
Source-Drain Ratings Characteristics
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, 18A, 25°C, di/dt 100A/µs Intrinsic turn-on time negligible (turn-on dominated LS+LD)
Notes: Pulse width 300µs; duty cycle Repetitive rating; pulse width limited max. junction temperature. fig. Starting 25°C, 590µH Caculated continuous current based maximum allowable junction 18A. (See Figure temperature; Package limitation current 20A. 18A, di/dt 140A/µs, V(BR)DSS, This applied I-PAK, D-PAK measured between 150°C lead center contact When mounted square (FR-4 G-10 Material recommended footprint soldering techniques refer application note #AN-994
IRFR/U3303PbF
1000
Drain-to-Source Current
Drain-to-Source Current
20µs PULSE WIDTH
8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
1000
8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
4.5V
0.01
4.5V
20µs PULSE WIDTH
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
RDS(on) Drain-to-Source Resistance (Normalized)
Drain-to-Source Current
20µs PULSE WIDTH
VGS, Gate-to-Source Voltage
Junction Temperature
Typical Transfer Characteristics
Normalized On-Resistance Temperature
IRFR/U3303PbF
1400 1200
Gate-to-Source Voltage
1MHz Ciss SHORTED Crss Coss
Capacitance (pF)
1000
Ciss Coss
Crss
TEST CIRCUIT FIGURE
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
1000
Reverse Drain Current
OPERATION THIS AREA LIMITED RDS(on)
Drain Current
10us
100us
Single Pulse
10ms
,Source-to-Drain Voltage
Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
IRFR/U3303PbF
LIMITED PACKAGE
Pulse Width Duty Factor
D.U.T.
Drain Current
-VDD
10a. Switching Time Test Circuit
Case Temperature
td(on) d(off)
Maximum Drain Current Case Temperature
10b. Switching Time Waveforms
Thermal Response thJC
0.50 0.20 0.10 0.05 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJC 0.0001 0.001 0.01
0.02 0.01
0.01 0.00001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRFR/U3303PbF
D.U.T.
Single Pulse Avalanche Energy (mJ)
BOTTOM
8.0A
0.01
12a. Unclamped Inductive Test Circuit
V(BR)DSS
Starting Junction Temperature
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
IRFR/U3303PbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
dv/dt controlled Driver same type D.U.T. controlled Duty Factor D.U.T. Device Under Test
Driver Gate Drive P.W. Period
P.W. Period VGS=10V
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
Logic Level Devices N-Channel HEXFETS
IRFR/U3303PbF
D-Pak (TO-252AA) Package Outline
Dimensions shown millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: R120 EMBLY CODE 1234 EMBLED 1999 SEMBLY LINE Note: embly line ition indicates "Lead-Free" PART NUMBER ERNAT IONAL RECT IFIER LOGO
IRFU120 916A
EMBLY CODE
CODE YEAR 1999 WEEK LINE
PART NUMBER INTERNATIONAL RECTIF LOGO
IRFU120
CODE DESIGNATES LEAD-F PRODUCT (OPT IONAL) YEAR 1999 WEEK SEMBLY CODE
EMBLY CODE
IRFR/U3303PbF
I-Pak (TO-251AA) Package Outline
Dimensions shown millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: IRFU120 EMBLY CODE 5678 MBLE 1999 EMBLY LINE Note: embly line ition indicates "Lead-Free" PART NUMBER INTE RNAT IONAL RECT LOGO
IRFU120 919A
EMBLY CODE
CODE YEAR 1999 WEEK LINE
PART NUMBE ERNAT IONAL RECTIF LOGO
IRFU120
SEMBLY CODE
DATE CODE IGNAT LEAD-F PRODUCT (OPTIONAL) YEAR 1999 EMBLY CODE
IRFR/U3303PbF
D-Pak (TO-252AA) Tape Reel Information
Dimensions shown millimeters (inches)
16.3 .641 15.7 .619
16.3 .641 15.7 .619
12.1 .476 11.9 .469
FEED DIRECTION
.318 .312
FEED DIRECTION
NOTES CONTROLLING DIMENSION MILLIMETER. DIMENSIONS SHOWN MILLIMETERS INCHES OUTLINE CONFORMS EIA-481 EIA-541.
INCH
NOTES OUTLINE CONFORMS EIA-481.
Data specifications subject change without notice.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information.12/04
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