IRF7341PbF Generation Technology Ultra On-Resistance Dual N-Chann
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IRF7341PbF
Generation Technology Ultra On-Resistance Dual N-Channel Mosfet Surface Mount Available Tape Reel Dynamic dv/dt Rating Fast Switching Lead-Free Description
HEXFET® Power MOSFET
VDSS RDS(on) 0.050
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Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques achieve extremely on-resistance silicon area. This benefit, combined with fast switching speed ruggedized device design that HEXFET Power MOSFETs well known for, provides designer with extremely efficient reliable device wide variety applications. SO-8 been modified through customized leadframe enhanced thermal characteristics multiple-die capability making ideal variety power applications. With these improvements, multiple devices used application with dramatically reduced board space. package designed vapor phase, infra red, wave soldering techniques. Power dissipation greater than 0.8W possible typical mount application.
SO-8
Absolute Maximum Ratings
Parameter
25°C 70°C 25°C 70°C VGSM dv/dt TSTG Drain- Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10µs Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Junction Storage Temperature Range
Max.
0.016
Units
W/°C V/ns
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Typ.
Max.
62.5
Units
°C/W
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11/9/04
IRF7341PbF
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Min.
Typ. 0.059 0.043 0.056
Max. Units Conditions 250µA V/°C Reference 25°C, 0.050 10V, 4.7A 0.065 4.5V, 3.8A VGS, 250µA 10V, 4.5A 55V, 55V, 55°C -100 -20V 4.5A 10V, Fig. 1.0A 1.0MHz, Fig.
Source-Drain Ratings Characteristics
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, 2.0A, 25°C, 2.0A di/dt -100A/µs
Notes:
Repetitive rating; pulse width limited Starting 25°C, 6.5mH
max. junction temperature. fig. 4.7A. (See Figure
4.7A, di/dt 220A/µs, V(BR)DSS,
150°C
Pulse width 300µs; duty cycle When mounted inch square copper board, t<10
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IRF7341PbF
Drain-to-Source Current
Drain-to-Source Current
8.0V 6.0V 4.5V 4.0V 3.5V BOTTOM 3.0V
8.0V 6.0V 4.5V 4.0V 3.5V BOTTOM 3.0V
3.0V
3.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
Drain-to-Source Current
Reverse Drain Current
20µs PULSE WIDTH
Gate-to-Source Voltage
,Source-to-Drain Voltage
Typical Transfer Characteristics
Typical Source-Drain Diode Forward Voltage
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IRF7341PbF
(on), Drain-to-Source Resistance
RDS(on) Drain-to-Source Resistance (Normalized)
4.7A
0.120
0.100
0.080
4.5V
0.060
0.040
Junction Temperature
Drain Current
Normalized On-Resistance Temperature
Typical On-Resistance Drain Current
0.12
RDS(on) Drain-to-Source Resistance
Single Pulse Avalanche Energy (mJ)
BOTTOM
2.1A 3.8A 4.7A
0.10
0.08
0.06
4.7A
0.04
Gate-to-Source Voltage
Starting Junction Temperature
Typical On-Resistance Gate Voltage
Maximum Avalanche Energy Drain Current
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IRF7341PbF
1200
1000
Gate-to-Source Voltage
1MHz Ciss SHORTED Crss Coss
4.5A
Capacitance (pF)
Ciss
Coss
Crss
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
Thermal Response thJA
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJA 0.001 0.01
0.0001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7341PbF
SO-8 Package Outline
Dimensions shown milimeters (inches)
INCHES .0532 .013 .0075 .189 .1497 .0688 .0098 .020 .0098 .1968 .1574 MILLIMET 1.35 0.10 0.33 0.19 4.80 3.80 1.75 0.25 0.51 0.25 5.00 4.00
.0040
0.25 [.010]
.050 BASIC .025 BASIC .2284 .0099 .016 .2440 .0196 .050
1.27 BASIC 0.635 BASIC 5.80 0.25 0.40 6.20 0.50 1.27
0.10 [.004]
0.25 [.010]
DIMENS IONING OLERANCING Y14.5M-1994. CONT ROLLING DIMENS ION: MILLIMET DIMENS IONS HOWN MILLIMET [INCHES LINE CONFORMS JEDEC LINE -012AA. DIMENS DOES INCLUDE MOLD PROT IONS. MOLD PROT IONS EXCEED 0.15 [.006]. DIMENS DOES INCLUDE MOLD PROT IONS. MOLD PROT IONS EXCEED 0.25 [.010]. DIMENS LENGT LEAD OLDERING SUBS 1.27 [.050] 6.46 [.255]
FOOT PRINT 0.72 [.028]
1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: IRF7101 (MOSFET CODE (YWW) IGNAT LEAD-FREE PRODUCT (OPTIONAL) LAST DIGIT YEAR WEEK SEMBLY CODE CODE PART NUMBER
ERNAT IONAL RECT IFIER LOGO
XXXX 7101
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IRF7341PbF
SO-8 Tape ReeDimensions shown milimeters (inches)
TERMINAL NUMBER
12.3 .484 11.7 .461
.318 .312
FEED DIRECTION
NOTES: CONTROLLING DIMENSION MILLIMETER. DIMENSIONS SHOWN MILLIMETERS(INCHES). OUTLINE CONFORMS EIA-481 EIA-541.
330.00 (12.992) MAX.
14.40 .566 12.40 .488 NOTES CONTROLLING DIMENSION MILLIMETER. OUTLINE CONFORMS EIA-481 EIA-541.
Data specifications subject change without notice. This product been designed qualified Consumer market. Qualifications Standards found IR's site.
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WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information.11/04
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