Complementary Power Transistors General-purpose power amplifier s

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Complementary Power Transistors General-purpose power amplifier s

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2N5880 2N5882
Complementary Power Transistors
General-purpose power amplifier switching applications.
Collector-Emitter Saturation Voltage VCE(sat) 1.0V (Maximum) 7.0A Execellent current Gain 6.0A
Dimensions Base Emitter Collector(Case)
Minimum 38.75 19.28 7.96 11.18 25.20 0.92 1.38 29.90 16.64 3.88 10.67
Maximum 39.96 22.23 9.28 12.19 26.67 1.09 1.62 30.40 17.30 4.36 11.18
2N5880 2N5882 Ampere Complementary Silicon Power Transistors Volts Watts
TO-3
Maximum Ratings
Characteristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous -Peak Base Current Total Power Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range
Dimensions Millimetres
Symbol VCEO VCBO VEBO TSTG
Rating
Unit
0.915 +200
W/°C
Thermal Characteristics
Characteristic Thermal Resistance Junction Case Symbol Maximum Unit °C/W
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2N5880 2N5882
Complementary Power Transistors
Figure-1 Power Derating Power Dissipation (Watts)
Temperature (°C)
Electrical Characteristics 25°C unless otherwise noted)
Characteristic Characteristics Collector-Emitter Sustaining Voltage 200mA, Collector Current (VCE 40V, Collector Current (VCE 80V, VBE(off) 1.5V) (VCE 80V, VBE(off) 1.5V, 150°C) Collector Current (VCB 80V, Emitter Current (VEB 5.0V, Characteristics Current Gain 2.0A, 4.0V) 6.0A, 4.0V) 15A, 4.0V) Collector-Emitter Saturation Voltage 7.0A, 0.7A) 15A, 3.75A) Base-Emitter Voltage 6.0A, 4.0V) Base-Emitter Saturation Voltage 15A, 3.75A) Dynamic Characteristics Current Gain-Bandwidth Product 1.0A, 10V, 1.0MHz) Small-Signal Current Gain 2.0A, 4.0V, 1.0KHz) Pulse Test Pulse Width 300µs, Duty Cycle 2.0%. ftest Symbol Minimum Maximum Unit
VCEO(sus) ICEO ICEX ICBO IEBO
VCE(sat) VBE(on) VBE(sat)
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2N5880 2N5882
Complementary Power Transistors
2N5880 Current Gain 2N5882 Current Gain
hFE, Current Gain
Collector Current (AMP) Collector Saturation Region VCE, Collector Emitter Voltage (Volts) VCE, Collector Emitter Voltage (Volts)
hFE, Current Gain
Collector Current (AMP) Collector Saturation Region
Base Current (AMP) "ON" Voltages
Base Current (AMP) "ON" Voltages
Voltage (Volts)
Voltage (Volts)
Collector Current (AMP)
Collector Current (AMP)
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31/05/05 V1.0
2N5880 2N5882
Complementary Power Transistors
Active-Region Safe Operating Area (SOA) There limitations power handling ability transistor: average junction temperature second Collector Current (AMP) breakdown safe operating area curves indicate IC-VCE limits transistor that must observed reliable operation i.e., transistor must subjected greater dissipation than curves indicate. data curve based TJ(PK) 200°C; variable depending conditions. Second breakdown pulse limits valid duty cycles provided TJ(PK) 200°C. high case temperatures, thermal limitation will reduce power that handled values less than limitations imposed second breakdown. VCE, Collector Emitter Voltage (Volts) Turn-Off Time Capacitances
Collector Current (AMP) Turn-On Time
Capacitance (pF)
Time (µs)
Reverse Voltage (Volts)
Time (µs)
Collector Current (AMP)
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31/05/05 V1.0
2N5880 2N5882
Complementary Power Transistors
Specifications
IC(av) maximum VCEO maximum minimum Ptot 25°C Package Type Part Number 2N5882 2N5880
TO-3
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31/05/05 V1.0
2N5880 2N5882
Complementary Power Transistors
Notes:
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Complementary Power Transistors General-purpose power amplifier s

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