Z-MOS Power MOSFET N-Channel Enhancement Mode NChannel Enhancemen
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IXZH16N60
Z-MOS Power MOSFET
N-Channel Enhancement Mode NChannel Enhancement Mode Switch Mode MOSFET Capacitance Z-MOSMOSFET Process Optimized Operation High dv/dt Ideal Class Applications Nanosecond Switching
Symbol VDSS VDGR VGSM ID25 dv/dt Test Conditions
25°C 150°C 25°C 150°C; Continuous Transient 25°C 25°C, pulse width limited 25°C 25°C IDM, di/dt 100A/µs, VDSS, 150°C,
VDSS ID25 RDS(on)
18.0 0.44 300W
Maximum Ratings
V/ns >200 V/ns
PDAMB RthJC
25°C
Symbol
Test Conditions
Characteristic Values 25°C unless otherwise specified) min. typ. max. 4.25 ±100
=125C
VDSS VGS(th) IGSS IDSS RDS(on) Tstg Weight
VGS, 250µ VDC, 0.8VDSS VGS=0
Features
0.44 15.2 +175
0.5ID25 Pulse test, 300µS, duty cycle 50V, 0.5ID25, pulse test
IXYS advanced Z-MOS process gate charge capacitances easier drive faster switching RDS(on) Very insertion inductance (<2nH)
Advantages
High Performance Optimized high speed Standard TO-247 package
1.6mm(0.063 from case
IXZH16N60
Z-MOS Power MOSFET
Symbol Test Conditions Characteristic Values 25°C unless otherwise specified) min. Ciss Coss Crss Cstray Td(on) Td(off) Toff Source-Drain Diode Symbol Test Conditions
Repetitive; pulse width limited VGS=0 Pulse test, duty cycle VDSS (External) Back Metal VDSS(max),
typ.
max.
1930 17.8 Characteristic Values 25°C unless otherwise specified) min. typ. max.
IXYS reserves right change limits, test conditions dimensions. IXYS MOSFETS covered more following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 6,404,065 6,583,505 6,710,463 6,727,585 6,731,002
IXZH16N60
Z-MOS Power MOSFET
10000
Ciss
1000
Capacitiance
Coss
Crss
Volts
IXZ316N60 Capacitances verses
#dsIXZH16N60 04/07 2007 IXYS
IXYS Company
2401 Research Blvd., Suite Fort Collins, 80526 970-493-1901 Fax: 970-493-1903 Email: info@ixysrf.com Web: http://www.ixysrf.com
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