N-Channel Enhancement Mode Linear 175MHz MOSFET Capacitance Z-MOS MOSF

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N-Channel Enhancement Mode Linear 175MHz MOSFET Capacitance Z-MOS MOSF

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IXZ215N12L
N-Channel Enhancement Mode Linear 175MHz MOSFET Capacitance Z-MOS MOSFET Process Optimized Linear Operation Ideal Class Broadcast Communications Applications
VDSS ID25 RDS(on)
PRELIMINARY
Symbol VDSS VDGR VGSM ID25 dv/dt Test Conditions
25°C 150°C 25°C 150°C; Continuous Transient 25°C 25°C, pulse width limited 25°C 25°C di/dt 00A/µs, DSS, 150°C,
Maximum Ratings
V/ns
DRAIN
>200 V/ns
GATE
PDHS PDAMB
25°C, Derate 6.0W/°C above 25°C 25°C
Features
min. VDSS VGS(th) IGSS IDSS RDS(on) Tstg Weight
1.6mm(0.063 from case 250µ 25°C 0.5ID25 Pulse test, 300µS, duty cycle 0.5ID25, pulse test
typ.
max.
Isolated Substrate high isolation voltage (>2500V) excellent thermal transfer Increased temperature power IXYS CapacitanceZ-MOS Very insertion inductance (<2nH) beryllium oxide (BeO) other
hazardous materials Advantages Process cycling capability
0.30 +175 +175
High Performance Package Easy mount-no insulators needed
IXZ215N12L
Symbol Test Conditions Characteristic Values 25°C unless otherwise specified) min. Ciss Coss Crss Cstray Td(on) Td(off) Toff
(External) Back Metal 40V,
typ.
max.
COMMUNICATIONS
VDD= 50V, Pout=200W, f=175MHz
min.
typ. 12.7
max.
Drain Efficiency VDD= 50V, Pout=200W, f=175MHz Load Mismatch VDD= 150V, Pout=300W, f=175MHz
IXZ215N12L
Capacitance Voltage
1000
Ciss
Coss
Crss Volts
verses
Amps, Siemens
Volts
IXZ215N12L
Verses function
Volts
#9200-0242 2004 IXYS
IXYS Company
2401 Research Blvd., Suite Fort Collins, 80526 970-493- 1901 Fax: 970-493-1903 Email: deiinfo@directedenergy.com Web: http://www.directedenergy.com

N-Channel Enhancement Mode Linear 175MHz MOSFET Capacitance Z-MOS MOSF

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