IRLML2502PbF HEXFET® Power MOSFET Ultra On-Resistance N-Chan

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IRLML2502PbF HEXFET® Power MOSFET Ultra On-Resistance N-Chan

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94892B
IRLML2502PbF
HEXFET® Power MOSFET
Ultra On-Resistance N-Channel MOSFET SOT-23 Footprint Profile (<1.1mm) Available Tape Reel Fast Switching Lead-Free Description
VDSS RDS(on) 0.045
These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques achieve extremely on-resistance silicon area. This benefit, combined with fast switching speed ruggedized device design that HEXFET® power MOSFETs well known for, provides designer with extremely efficient reliable device battery load management. thermally enhanced large leadframe been incorporated into standard SOT-23 package produce HEXFET Power MOSFET with industry's smallest footprint. This package, dubbed Micro3TM, ideal applications where printed circuit board space premium. profile (<1.1mm) Micro3 allows easily into extremely thin application environments such portable electronics PCMCIA cards. thermal resistance power dissipation best available.
Micro3
Absolute Maximum Ratings
Parameter
25°C 70°C 25°C 70°C TSTG Drain- Source Voltage Continuous Drain Current, 4.5V Continuous Drain Current, 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction Storage Temperature Range
Max.
1.25 0.01
Units
W/°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Typ.
Max.
Units
°C/W
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06/05/09
IRLML2502PbF
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Min. 0.60
Typ. 0.01 0.035 0.050
Max. Units Conditions 250µA V/°C Reference 25°C, 0.045 4.5V, 4.2A 0.080 2.5V, 3.6A VGS, 250µA 10V, 4.0A 16V, 16V, 70°C -100 -12V 4.0A 5.0V 1.0A 1.0MHz
Source-Drain Ratings Characteristics
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, 1.3A, 25°C, 1.3A di/dt 100A/µs
Notes:
Repetitive rating; pulse width limited Pulse width 300µs; duty cycle
max. junction temperature. fig.
Surface mounted FR-4 board, 5sec.
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IRLML2502PbF
7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V
Drain-to-Source Current
2.25V
Drain-to-Source Current
7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V
2.25V
20µs PULSE WIDTH
20µs PULSE WIDTH
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
RDS(on) Drain-to-Source Resistance (Normalized)
4.0A
Drain-to-Source Current
20µs PULSE WIDTH
4.5V
Gate-to-Source Voltage
Junction Temperature
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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IRLML2502PbF
1200
1000
Gate-to-Source Voltage
1MHz Ciss SHORTED Crss Coss
4.0A
Capacitance (pF)
Ciss
Coss Crss
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
Reverse Drain Current
OPERATION THIS AREA LIMITED RDS(on)
Drain Current
10us 100us 10ms
Single Pulse
,Source-to-Drain Voltage
Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRLML2502PbF
Drain Current
Case Temperature
Maximum Drain Current Case Temperature
1000
Thermal Response thJA
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJA 0.0001 0.001 0.01
0.00001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRLML2502PbF
Drain-to-Source Resistance
0.05
0.30
RDS(on) Drain-to -Source Voltage
2.5V 0.20
0.04
4.0A
0.03
0.10 4.5V
0.02
0.00 Drain Current
VGS, Gate -Source Voltage
On-Resistance Gate Voltage
On-Resistance Drain Current
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IRLML2502PbF
Micro3 (SOT-23) Package Outline
Dimensions shown millimeters (inches)
9DH@ITDPIT HDGGDH@U@ST DI8C@T
b"'d !&#!
b"&$d b&$d
IPU@T
Micro3 (SOT-23/TO-236AB) Part Marking Information
`@6S XPSF X@@F
8P9@
XPSF X@@F
`@6S
Note: most current drawing please refer website http://www.irf.com/package/
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IRLML2502PbF
Micro3Tape Reel Information
Dimensions shown millimeters (inches)
2.05 .080 1.95 .077 .161 .154 .062 .060 1.32 .051 1.12 .045
1.85 .072 1.65 .065
3.55 .139 3.45 .136
.326 .312
FEED DIRECTION
.161 .154
.043 .036
0.35 .013 0.25 .010
178.00 7.008 MAX.
9.90 .390 8.40 .331 NOTES: CONTROLLING DIMENSION MILLIMETER. OUTLINE CONFORMS EIA-481 EIA-541.
Data specifications subject change without notice.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. 06/09
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IRLML2502PbF HEXFET® Power MOSFET Ultra On-Resistance N-Chan

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