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High voltage power transistor. designed high-voltage, high-speed, powe


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1165901
High voltage power transistor. designed high-voltage, high-speed, power switching inductive circuit, motor control, solenoid relay drivers.
Collector-emitter sustaining voltage VCEO (sus) 4000V (Minimum). collector-emitter saturation voltage (sat) 3.0V (Maximum) 8.0A, 2.5A.
TO-3
Dimensions
Minimum 38.75 19.28 7.96 11.18 25.20 0.92 1.38 29.90 16.64 3.88 10.67
Maximum 39.96 22.23 9.28 12.19 26.67 1.09 1.62 30.40 17.30 4.36 11.18
BUX80 Ampere Power Transistors Volts Watts
Base Emitter Collector (Case)
TO-3
Dimensions Millimetres
http://www.farnell.com http://www.newark.com http://www.cpc.co.uk
Page
22/10/08 V1.1
1165901
Maximum Ratings
Characteristic Collector-Emitter Voltage CoIIector-Emitter Voltage (VBE Emitter-Base Voltage Collector Current-Continuous -Peak Base Current-Continuous Total Power Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range Symbol VCEO VCES VEBO TSTG BUX80 +200 W/°C Unit
Thermal Characteristics
Characteristic Thermal Resistance Junction Case Symbol Maximum 1.25 Unit °C/W
Power Derating
Power Dissipation (Watts)
Temperature (°C)
http://www.farnell.com http://www.newark.com http://www.cpc.co.uk
Page
22/10/08 V1.1
1165901
Electrical Characteristics
25°C unless otherwise noted) Symbol Minimum Maximum Unit
Characteristic Characteristics Collector-Emitter Sustaining Voltage 100mA, 25mH) Collector Current (VCE 800V, (VCE 800V, 125°C) Emitter Current (VEB 10V, Characteristics Current Gain 1.2A, 5.0V) Collector-Emitter Saturation Voltage 5.0A, 1.0mA) 8.0A, 2.5mA) Base-Emitter Saturation Voltage 5.0A, 1.0mA) 8.0A, 2.5mA) Switching Characteristics Turn Time Storage Time Fall Time 250V, 5.0A 1.0A, -2.0A
VCEO (sus)
ICES IEBO
(typical)
(sat)
(sat)
Pulse Test Pulse Width 300µs, Duty Cycle 2.0%.
http://www.farnell.com http://www.newark.com http://www.cpc.co.uk
Page
22/10/08 V1.1
1165901
Current Gain VCE, Collector Emitter Voltage (Volts) Collector Saturation Region
hFE, Current Gain
Collector Current (Amperes) Base-Emitter Saturation Voltage VBE, Base-Emitter Saturation Voltage (Volts) VCE, Collector-Emitter Saturation Voltage (Volts)
Base Current (Amperes) Collector-Emitter Saturation Voltage
Collector Current (Amperes) Switching Time
Collector Current (Amperes) Safe Operating Area Collector Current (Amperes)
Time (µs)
Collector Current (Amperes)
http://www.farnell.com http://www.newark.com http://www.cpc.co.uk
VCE, Collector Emitter Voltage (Volts)
Page
22/10/08 V1.1
1165901
Part Number Table
Description Transistor, NPN, TO-3 Part Number BUX80
Disclaimer This data sheet contents (the "Information") belong Premier Farnell Group (the "Group") licensed licence granted other than information purposes connection with products which relates. licence intellectual property rights granted. Information subject change without notice replaces data sheets previously supplied. Information supplied believed accurate Group assumes responsibility accuracy completeness, error omission from made Users this data sheet should check themselves Information suitability products their purpose make assumptions based information included omitted. Liability loss damage resulting from reliance Information (including liability resulting from negligence where Group aware possibility such loss damage arising) excluded. This will operate limit restrict Group's liability death personal injury resulting from negligence. Multicomp registered trademark Group. Premier Farnell 2008.
http://www.farnell.com http://www.newark.com http://www.cpc.co.uk
Page
22/10/08 V1.1

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