N-CHANNEL 0.35A SOT23-3L TO-92 STripFETTMII MOSFET Table General
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2N7000 2N7002
N-CHANNEL 0.35A SOT23-3L TO-92 STripFETTMII MOSFET
Table General Features
TYPE 2N7000 2N7002 VDSS RDS(on) 10V) 10V) 0.35 0.20
Figure Package
TYPICAL RDS(on) @10V THRESHOLD DRIVE DESCRIPTION This MOSFET second generation STMicroelectronics unique "Single Feature SizeTM" strip-based process. resulting transistor shows extremely high packing density onresistance, rugged avalanche characteristics less critical alignment steps therefore remarkable manufacturing reproducibility. APPLICATIONS HIGH SWITCHING APPLICATIONS
SOT23-3L
TO-92
Figure Internal Schematic Diagram
SOT23-3L
TO-92
Table Order Codes
SALES TYPE 2N7000 2N7002 MARKING 2N7000G ST2N PACKAGE TO-92 SOT23-3L PACKAGING BULK TAPE REEL
Rev. April 2005 1/11
2N7000 2N7002
Table Absolute Maximum ratings
Symbol VDGR PTOT Parameter TO-92 Drain-source Voltage (VGS Drain-gate Voltage (RGS Gate- source Voltage Drain Current (continuous) 25°C Drain Current (pulsed) Total Dissipation 25°C 0.35 0.20 0.35 Value SOT23-3L Unit
Pulse width limited safe operating area
Table Thermal Data
TO-92 Rthj-amb Tstg Thermal Resistance Junction-ambient Operating Junction Temperature Storage Temperature SOT23-3L 357.1 °C/W
When mounted FR-4, copper board.
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table On/Off
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS Gate-body Leakage Current (VDS Gate Threshold Voltage Static Drain-source Resistance Test Conditions Rating Rating, 125°C VGS, Min. ±100 Typ. Max. Unit
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2N7000 2N7002
ELECTRICAL CHARACTERISTICS (CONTINUED) Table Dynamic
Symbol Ciss Coss Crss td(on) td(off) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions MHz, Min. Typ. Max. Unit
(see Figure (see Figure
Table Source Drain Diode
Symbol ISDM IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt A/µs, 150°C (see Figure Test Conditions Min. Typ. Max. 0.35 1.40 Unit
Pulsed: Pulse duration duty cycle Pulse width limited safe operating area.
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2N7000 2N7002
Figure Safe Operating Area TO-92 Figure Thermal Impedance TO-92
Figure Safe Operating Area SOT23-3L
Figure Thermal Impedance SOT23-3L
Figure Output Characteristics
Figure Transfer Characteristics
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2N7000 2N7002
Figure Transconductance Figure Static Drain-source Resistance
Figure Gate Charge Gate-source Voltage
Figure Capacitance Variations
Figure Normalized Gate Threshold Voltage Temperature
Figure Normalized Resistance Temperature
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2N7000 2N7002
Figure Source-Drain Forward Characteristics Figure Normalized BVDSS Temperature
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2N7000 2N7002
Figure Unclamped Inductive Load Test Circuit Figure Unclamped Inductive Wafeform
Figure Switching Times Test Circuit Resistive Load
Figure Gate Charge Test Circuit
Figure Test Circuit Inductive Load Switching Diode Recovery Times
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2N7000 2N7002
TO-92 MECHANICAL DATA
MIN. 4.32 0.36 4.45 3.30 2.41 1.14 12.70 2.16 0.92 0.41 MAX. 4.95 0.51 4.95 3.94 2.67 1.40 15.49 2.41 1.52 0.56 MIN. 0.170 0.014 0.175 0.130 0.094 0.044 0.50 0.085 0.036 0.016 inch TYP. MAX. 0.194 0.020 0.194 0.155 0.105 0.055 0.610 0.094 0.060 0.022
DIM.
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2N7000 2N7002
SOT23-3L MECHANICAL DATA
DIM. MIN. 0.400 0.540 0.890 0.010 0.880 0.300 0.080 2.800 2.100 1.200 1.300 0.950 1.900 0.600 15.75 21.27 2.900 0.950 MAX. 1.120 0.100 1.020 0.500 0.200 3.040 2.64 1.400 MIN. 35.05 0.39 34.65 11.81 3.15 110.26 82.70 47.26 51.19 37.41 74.82 23.63 114.17 37.41 TYP. MAX. 44.12 3.94 40.17 19.69 7.88 119.72 103.96 55.13 mils
GAUGE PLANE 0.25
0.10
SEATING PLANE
7110469/A
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2N7000 2N7002
Table Revision History
Date 06-Apr-2005 20-Apr-2005 Revision Description Changes stylesheet Configuration TO-92
10/11
2N7000 2N7002
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo registered trademark STMicroelectronics other names property their respective owners 2005 STMicroelectronics Rights Reserved STMicroelectronics group companies Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States America
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