High Speed Silicon Photodiode BPV10NF high sensitive wide bandwid

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High Speed Silicon Photodiode BPV10NF high sensitive wide bandwid

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BPV10NF
High Speed Silicon Photodiode
BPV10NF high sensitive wide bandwidth photodiode standard plastic package. black epoxy universal filter, spectrally matched GaAs GaAlAs emitters. BPV10NF optimized serial infrared links according IrDA standard.
16140
Features
Extra fast response times High modulation bandwidth (>100 MHz) High radiant sensitivity Radiant sensitive area 0.78 junction capacitance Standard package with universal filter Angle half sensitivity Lead-free component Component accordance RoHS 2002/95/EC WEEE 2002/96/EC
Applications
Infrared high speed remote control free transmission systems with high modulation frequencies high data transmission rate requirements especially direct point point links. BPV10NF ideal design transmission systems according IrDA requirements carrier frequency based systems (e.g. FSK- coded, MHz). Recommended emitter diodes TSHF 5.-series TSSF 4500.
Absolute Maximum Ratings
Tamb unless otherwise specified Parameter Reverse Voltage Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/ Ambient from body, Tamb Test condition Symbol Tamb Tstg RthJA Value Unit
Electrical Characteristics
Tamb unless otherwise specified Parameter Forward Voltage Breakdown Voltage Reverse Dark Current Diode capacitance Test condition MHz, Symbol V(BR) Typ. Unit
Document Number 81503 Rev. 1.4, 08-Mar-05
www.vishay.com
BPV10NF
Vishay Semiconductors Optical Characteristics
Tamb unless otherwise specified Parameter Open Circuit Voltage Short Circuit Current Reverse Light Current Test condition mW/cm2, Symbol TKIra Typ. -0.1 0.55 1050
Unit cmHz/W
mW/cm2, mW/cm2, mW/cm2,
Temp. Coefficient Absolute Spectral Sensitivity Angle Half Sensitivity Wavelength Peak Sensitivity Range Spectral Bandwidth Quantum Efficiency Noise Equivalent Power Detectivity Rise Time Fall Time
mW/cm2,
1012
Typical Characteristics (Tamb unless otherwise specified)
Reverse Dark Current
1000
Relative Reverse Light Current
=20V
8436
R=5V Ee=1mW/cm2 =870nm
8621
Tamb Ambient Temperature
Tamb Ambient Temperature
Figure Reverse Dark Current Ambient Temperature
Figure Relative Reverse Light Current Ambient Temperature
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Document Number 81503 Rev. 1.4, 08-Mar-05
BPV10NF
1000
Reverse Light Current
Relative Spectral Sensitivity
R=5V
=870nm
0.01
8622
Irradiance mW/cm
8426
1050 Wavelength
1150
Figure Reverse Light Current Irradiance
Figure Relative Spectral Sensitivity Wavelength
Reverse Light Current (µA)
mW/cm mW/cm mW/cm mW/cm
=870nm
0.05 mW/cm 0.02 mW/cm
8562
8623
Reverse Voltage
Figure Reverse Light Current Reverse Voltage
Figure Relative Radiant Sensitivity Angular Displacement
Diode Capacitance
f=1MHz
8439
Reverse Voltage
Figure Diode Capacitance Reverse Voltage
Document Number 81503 Rev. 1.4, 08-Mar-05
www.vishay.com
BPV10NF
Vishay Semiconductors Package Dimensions
12198
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Document Number 81503 Rev. 1.4, 08-Mar-05
BPV10NF
Vishay Semiconductors Ozone Depleting Substances Policy Statement
policy Vishay Semiconductor GmbH Meet present future national international statutory requirements. Regularly continuously improve performance products, processes, distribution operatingsystems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances (ODSs). Montreal Protocol (1987) London Amendments (1990) intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. Vishay Semiconductor GmbH been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency (EPA) Council Decision 88/540/EEC 91/690/EEC Annex (transitional substances) respectively. Vishay Semiconductor GmbH certify that semiconductors manufactured with ozone depleting substances contain such substances.
reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer Vishay Semiconductors products unintended unauthorized application, buyer shall indemnify Vishay Semiconductors against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: (0)7131 2831, number: (0)7131 2423
Document Number 81503 Rev. 1.4, 08-Mar-05
www.vishay.com
Legal Disclaimer Notice
Vishay
Notice
Specifications products displayed herein subject change without notice. Vishay Intertechnology, Inc., anyone behalf, assumes responsibility liability errors inaccuracies. Information contained herein intended provide product description only. license, express implied, estoppel otherwise, intellectual property rights granted this document. Except provided Vishay's terms conditions sale such products, Vishay assumes liability whatsoever, disclaims express implied warranty, relating sale and/or Vishay products including liability warranties relating fitness particular purpose, merchantability, infringement patent, copyright, other intellectual property right. products shown herein designed medical, life-saving, life-sustaining applications. Customers using selling these products such applications their risk agree fully indemnify Vishay damages resulting from such improper sale.
Document Number: 91000 Revision: 08-Apr-05
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High Speed Silicon Photodiode BPV10NF high sensitive wide bandwid

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