Darlington Complementary Transistors Designed general-purpose pow
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2N6051/2N6052/2N6058/2N6059
Darlington Complementary Transistors
Designed general-purpose power amplifier frequency switching applications. Monolithic construction with Built-in Base-Emitter Shunt Resistors. High current gain-hFE (typical) 6.0A.
Dimension
Minimum 38.75 19.28 7.96 11.18 25.20 0.92 1.38 29.90 16.64 3.88 10.67
Maximum 39.96 22.23 9.28 12.19 26.67 1.09 1.62 30.40 17.30 4.38 11.18
2N6051 2N6052
2N6058 2N6059
Darlington Ampere Complementary Silicon Power Transistors Volts Watts
Dimensions Millimetres
TO-3
Maximum Ratings
Characteristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -Continuous -Peak Base Current Total Power Dissipation 25°C Derated above 25°C Operating Storage Junction Temperature Range Symbol VCEO VCBO VEBO TSTG 2N6051 2N6058 0.857 +200 W/°C 2N6052 2N6059 Unit
Thermal Characteristics
Characteristic Thermal Resistance Junction Case Symbol Maximum 1.17 Unit °C/W
Page
21/04/04 V1.0
2N6051/2N6052/2N6058/2N6059
Darlington Complementary Transistors
Figure Power Derating
Power Dissipation (Watts)
Electrical Characteristics 25°C unless otherwise noted)
Characteristic Characteristics Collector-Emitter Sustaining Voltage 100mA, Collector Cut-off Current (VCE 40V, (VCE 50V, 2N6051, 2N6058 2N6052, 2N6059 2N6051, 2N6058 2N6052, 2N6059 VCEO(sus) Symbol Minimum Maximum Unit
ICEO
Collector Cut-off Current (VCE Rated VCEO, VBE(off) 1.5V) (VCE Rated VCEO, VBE(off) 1.5V, 150°C) Emitter Cut-off Current (VEB 5.0V, Characteristics Current Gain 6.0A, 3.0V) 12A, 3.0V) Collector-Emitter Saturation Voltage 6.0A, 24mA) 12A, 120mA) Base-Emitter Voltage 6.0A, 3.0V) Base-Emitter Saturation Voltage 12A, 120mA) Dynamic Characteristics Current-Gain-Bandwidth Product 5.0A, 3.0V, 1.0MHz) Small-Signal Current-Gain 5.0A, 3.0V, 1.0KHz) Pulse Test: Pulse Width 300µs, Duty Cycle 2.0% ftest
ICEX IEBO
18,000
VCE(sat) VBE(on) VBE(sat)
Page
30/05/05 V1.0
2N6051/2N6052/2N6058/2N6059
Darlington Complementary Transistors
Active-Region Safe Operating Area (SOA)
There limitations power handling ability transistor: average junction temperature second breakdown safe operating area curves indicate IC-VCE limits transistor that must observed reliable operation i.e., transistor must subjected greater dissipation than curves indicate. data curve based (PK) 200°C; variable depending conditions. Second breakdown pulse limits valid duty cycles provided (PK) 200°C, high case temperatures, thermal limitation will reduce power that handled values less than limitations imposed second breakdown.
Page
30/05/05 V1.0
2N6051/2N6052/2N6058/2N6059
Darlington Complementary Transistors
2N6051, 2N6052 2N6058, 2N6059
Page
30/05/05 V1.0
2N6051/2N6052/2N6058/2N6059
Darlington Complementary Transistors
Specifications
maximum VCEO maximum minimum Ptot 25°C Part Number Package 2N6058 2N6059 2N6051 2N6052
TO-3
Page
30/05/05 V1.0
2N6051/2N6052/2N6058/2N6059
Darlington Complementary Transistors
Notes:
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