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Darlington Transistors They high voltage, high current devices fa


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BU806
Darlington Transistors
They high voltage, high current devices fast switching applicatons. Collector-emitter sustaining voltage-VCEO (sus) 200V (Minimum) BU806 Collector-emitter Saturation Voltage (SAT) 1.5V (Maximum) 5.0A, 50mA.
Dimension Base Collector Emitter Collector (Case)
Minimum 14.68 9.78 5.01 13.06 3.57 2.42 1.12 0.72 4.22 1.14 2.20 0.33 2.48 3.70
Maximum 15.31 10.42 6.52 14.62 4.07 3.66 1.36 0.96 4.98 1.38 2.97 0.55 2.98 3.90 TO-220 BU806 Ampere Darlington Complementary Silicon Power Transistors Volts Watts
Maximum Ratings
Characteristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Peak Base Current-Continuous Total Power Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range Symbol VCEO VCBO VEBO TSTG BU806 0.48
Dimensions Millimeters
Unit
W/°C
+150
Thermal Characteristics
Characteristic Thermal Resistance Junction Case Symbol Maximum 2.08 Unit °C/W
Page
16/03/06 V1.0
BU806
Darlington Transistors
Power Derating
Schematic Diagram
Electrical Characteristics 25°C unless otherwise noted)
Characteristic Characteristics Collector-Emitter Sustaining Voltage 100mA, Collector Current (VCE 400V, Emitter Current (VEB =6.0V, Characteristics Collector-Emitter Saturation Voltage 5.0A, 50mA) Base-Emitter Saturation Voltage 5.0A, 50mA) Diode Forward Voltage 4.0A Switching Characteristics Turn Time Storage Time Fall Time 100V, 5.0A 50mA, -500mA 100V 0.35 (Typical) 0.55 (Typical) 0.20 (Typical) (sat) (sat) VCEO (SUS) ICES IEBO Symbol Minimum Maximum Unit
Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%.
Page
16/03/06 V1.0
BU806
Darlington Transistors
Current Gain
Figure Active Region Safe Operating Area There limitations power handling ability transistor: average junction temperature second breakdown safe operating area curves indicate IC-VCE limits transistor that must observed reliable operation i.e., transistor must subjected greater dissipation than curves indicate. data curve based (PK) 150°C; variable depending conditions. Second breakdown pulse limits valid duty cycles provided (PK) 150°C. high case temperatures, thermal limitation will reduce power that handled values less than limitations imposed second breakdown.
Specifications
(av) maximum VCEO maximum minimum Ptot 25°C Package TO-220 Type Part Number BU806
Page
16/03/06 V1.0
BU806
Darlington Transistors
Notes:
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Disclaimer This data sheet contents (the "Information") belong Premier Farnell Group (the "Group") licensed licence granted other than information purposes connection with products which relates. licence intellectual property rights granted. Information subject change without notice replaces data sheets previously supplied. Information supplied believed accurate Group assumes responsibility accuracy completeness, error omission from made Users this data sheet should check themselves Information suitability products their purpose make assumptions based information included omitted. Liability loss damage resulting from reliance Information (including liability resulting from negligence where Group aware possibility such loss damage arising) excluded. This will operate limit restrict Group's liability death personal injury resulting from negligence. Multicomp registered trademark Group. Premier Farnell 2004.
Page
16/03/06 V1.0

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