Power Bipolar Transistors Silicon Planar Epitaxial Transistors.

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Power Bipolar Transistors Silicon Planar Epitaxial Transistors.

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BC177/BC177B Series
Power Bipolar Transistors
Silicon Planar Epitaxial Transistors.
TO-18 Metal Package
Dimensions Minimum 5.24 4.52 4.31 0.40 0.91 0.71 12.70
Dimensions Millimetres
Maximum 5.84 4.97 5.33 0.53 0.76 1.27 2.97 1.17 1.21
Configuration: Emitter Base Collector
Page
21/04/06 V1.0
BC177/BC177B Series
Power Bipolar Transistors
Absolute Maximum Ratings
Description Symbol VCEO Collector-Emitter Voltage VCES Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation 25°C Derate above 25°C Power Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range Thermal Resistance Junction Case (j-c) °C/W VCBO VEBO 2.28 6.67 +200 BC177 Unit
mW/°C
Tstg
Electrical Characteristics 25°C unless otherwise specified)
Description Collector-Cut Current Symbol ICES Test Condition 20V, Tamb 125°C 20V, 10µA, 2mA, 10µA, Minimum Typical Maximum Unit
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
VCBO VCEO VEBO
Current
2mA, BC177 Group
0.20 0.60 0.80 0.75
Collector Emitter Saturation Voltage
(Sat) (Sat) (on)
Base Emitter Saturation Voltage
10mA, 0.5mA 100mA,
0.90
Base Emitter Voltage
2mA,
0.60
Page
21/04/06 V1.0
BC177/BC177B Series
Power Bipolar Transistors
Electrical Characteristics 25°C unless otherwise specified)
Description Symbol Test Condition 10mA, value which 11mA 10mA, 50MHz 0.2mA 1kHz,B 200Hz 10V, 1MHz 1kHz 2mA, BC177 Group 2mA, Group 2mA, Group Minimum Maximum Unit
Collector Knee Voltage
0.60
Transition Frequency
Noise Figure
Output Capacitance
Cobo
Small Signal Current Gain
Input Impedance
Output Admittance
umohs
Specifications
VCEO VCBO maximum minimum TO-18 minimum Ptot (mW) Type Package Part Number
BC177 BC177B
Page
21/04/06 V1.0
BC177/BC177B Series
Power Bipolar Transistors
Notes:
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21/04/06 V1.0

Power Bipolar Transistors Silicon Planar Epitaxial Transistors.

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