High Voltage Power Transistors Devices with breakdown voltages 16

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

High Voltage Power Transistors Devices with breakdown voltages 16

Datasheet Thumbnail

Top Searches for this datasheet

BF259
High Voltage Power Transistors
Devices with breakdown voltages 160V minimum. Silicon High Voltage Power Transistors.
TO-39 Metal Package
Dimensions
Minimum 8.50 7.74 6.09 0.40 2.41 4.82 0.71 0.73 12.70
Maximum 9.39 8.50 6.60 0.53 0.88 2.66 5.33 0.86 1.02
Dimensions Millimetres
Configuration Emitter Base Collector
Page
31/05/05 V1.0
BF259
High Voltage Power Transistors
Absolute Maximum Ratings
Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current-Continuous Collector Current-Peak Power Dissipation 25°C Derate above 25°C Power Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range Thermal Characteristics Junction Ambient Free Junction Case Rth(j-a) Rth(j-c) °C/W Symbol VCBO VCEO VEBO 5.71 28.57 +200 BF259 Units
mW/°C
Tstg
Electrical Characteristics 25°C unless specified otherwise)
Parameter Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Current Gain Collector Emitter Saturation Voltage Symbol VCEO VCBO VEBO ICBO VCE(Sat) Test Condition 10mA, 100µA, 100µA, VCBO 250V, 30mA, 30mA, BF259 >300 >300 Units
Dynamic Characteristics
Parameter Transition Frequency Collector Base Capacitance Symbol Test Condition 15mA, 10V, 100MHz 30V, 1MHz Typical Units
Page
31/05/05 V1.0
BF259
High Voltage Power Transistors
Specifications
VCEO maximum IC(av) maximum minimum 30mA VCE(Sat) maximum 30mA minimum (MHz) Ptot 25°C (mW) Package TO-39 Type Part Number
BF259
Page
31/05/05 V1.0
BF259
High Voltage Power Transistors
Notes:
International Sales Offices:
AUSTRALIA Farnell InOne
9645 8888 9644 7898
FINLAND Farnell InOne
7780 5411
NETHERLANDS Farnell InOne
7373 7333
SWITZERLAND Farnell InOne
AUSTRIA Farnell InOne
2180 2180
FRANCE Farnell InOne
ZEALAND Farnell InOne
0646 0656
Farnell InOne
8701 8701
BELGIUM Farnell InOne
2810 3648
GERMANY Farnell InOne
NORWAY Farnell InOne
BuckHickman InOne
8450 8450
BRAZIL Farnell-Newark InOne
4066 9400 4066 9410
HONG KONG Farnell-Newark InOne 2268 9888
2268 9899
PORTUGAL Farnell InOne
8804 5288
8701 8701
CHINA Farnell-Newark InOne
++86 6238 5152 ++86 6238 5022
IRELAND Farnell InOne
9277 9016
SINGAPORE
Farnell-Newark InOne 6788 0200
export
EXPORT Farnell InOne
8701 8701
6788 0300
enquiries from other markets
DENMARK Farnell InOne
ITALY Farnell InOne
SPAIN Farnell InOne
8805 5107
http://www.farnellinone.com
ESTONIA Farnell InOne
7780 5411
Farnell-Newark InOne 7873 8000 7873 7000
MALAYSIA
SWEDEN Farnell InOne
http://www.buckhickmaninone.com http://www.cpc.co.uk
Disclaimer This data sheet contents (the "Information") belong Premier Farnell Group (the "Group") licensed licence granted other than information purposes connection with products which relates. licence intellectual property rights granted. Information subject change without notice replaces data sheets previously supplied. Information supplied believed accurate Group assumes responsibility accuracy completeness, error omission from made Users this data sheet should check themselves Information suitability products their purpose make assumptions based information included omitted. Liability loss damage resulting from reliance Information (including liability resulting from negligence where Group aware possibility such loss damage arising) excluded. This will operate limit restrict Group's liability death personal injury resulting from negligence. Multicomp registered trademark Group. Premier Farnell 2004.
Page
31/05/05 V1.0

High Voltage Power Transistors Devices with breakdown voltages 16

Top Searches for this datasheet

Other recent searches