High performance, frequency devices. NPN/PNP Silicon Planar Epitaxial
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BC635 BC640
High performance, frequency devices. NPN/PNP Silicon Planar Epitaxial Transistors. Driver Stages Audio Amplifier Application.
TO-92 Plastic Package
Dimensions
Minimum 4.32 4.45 3.18 0.41 0.35 1.14 12.70
Maximum 5.33 5.20 4.19 0.55 0.50
1.40 1.53 Dimensions Millimetres
Configuration: Base Collector Emitter
Page
31/05/05 V1.0
BC635 BC640
Absolute Maximum Ratings 25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation 25°C Derate Above 25°C Power Dissipation 25°C Derate Above 25°C Operating Storage Junction Temperature Range Thermal Resistance From Junction Case From Junction Ambient Rth(j-c) Rth(j-a) °C/W Symbol VCBO VCEO VEBO 2.75 +150 mW/°C mW/°C BC635 BC640 Unit
Tstg
Electrical Characteristics 25°C unless otherwise specified)
Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Cut Current Symbol VCEO* VCBO VEBO ICBO Test Condition 10mA, 100µA, 10µA, 30V, 125°C 30V, 500mA, 500mA, 50mA 5mA, 150mA, Group-10 Group-16 500mA, BC635 >5.0 <100 <1.0 <0.5 BC640 Unit
Base Emitter Voltage Collector Emitter Saturation Voltage
VBE(on)* VCE(sat)*
Current Gain
hFE*
Dynamic Characteristics Transistors Frequency Output Capacitance Input Capacitance 50mA, 100MHz (Typical) 10V, 1MHz 0.5V, 1MHz (Typical) (Typical) (Typical) (Typical) (Typical)
*Pulse Test Pulse Width 300µs, Duty Cycle
Page
31/05/05 V1.0
BC635 BC640
Specifications
VCEO maximum TO-92 BC640 maximum minimum 150mA VCE(Sat) maximum 500mA Package Type Part Number
BC635
Page
31/05/05 V1.0
BC635 BC640
Notes:
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31/05/05 V1.0
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