Darlington Power Transistor Fast Switching Darlington Transistor

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Darlington Power Transistor Fast Switching Darlington Transistor

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BU806
Darlington Power Transistor
Fast Switching Darlington Transistor high voltage, high current devices fast switching applications.
Collector-Emitter Sustaining Voltage VCEO(sus) 200V (Minimum). Collector-Emitter Saturation Voltage VCE(sat) 1.5V (Maximum) 5.0A, 50mA.
BU806 Ampere Darlington Power Transistor Volts Watts
Dimensions Minimum Base Collector Emitter Collector(Case) 14.68 9.78 5.01 13.06 3.57 2.42 1.12 0.72 4.22 1.14 2.20 0.33 2.48 3.70
Maximum 15.31 10.42 6.52 14.62 4.07 3.66 1.36 0.96 4.98 1.38 2.97 0.55 2.98 3.90 TO-220
Dimensions Millimetres
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31/05/05 V1.0
BU806
Darlington Power Transistor
Maximum Ratings
Characteristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous -Peak Base Current-Continuous Total Power Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range Symbol VCEO VCBO VEBO BU806 0.48 +150 W/°C Unit
TSTG
Thermal Characteristics
Characteristic Thermal Resistance Junction Case Symbol Maximum 2.08 Unit °C/W
Figure Power Derating Power Dissipation (Watts)
Temperature (°C)
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31/05/05 V1.0
BU806
Darlington Power Transistor
Electrical Characteristics 25°C Unless Otherwise Noted)
Characteristic Characteristics Collector-Emitter Sustaining Voltage 100mA, Collector Current (VCE 400V, Emitter Current (VEB 6.0V, Characteristics Collector-Emitter Saturation Voltage 5.0A, 50mA) Base-Emitter Saturation Voltage 5.0A, 50mA) Diode Forward Voltage 4.0A) VCEO(sus) ICES IEBO Symbol Minimum Maximum Unit
VCE(sat) VBE(sat) VF(sat)
Switching Characteristics
Turn Time Storage Time Fall Time 100V, 5.0A 50mA, -500mA 100V 0.35 (typical) 0.55 (typical) 0.20 (typical)
Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%.
Current Gain
hFE, Current Gain
Collector Current (AMP)
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31/05/05 V1.0
BU806
Darlington Power Transistor
Active-Region Safe Operating Area (SOA) There limitations power handling ability transistor: average junction temperature second breakdown safe operating area curves indicate IC-VCE limits transistor that must Collector Current (AMP) observed reliable operation i.e., transistor that must subjected greater dissipation than curves indicate. data curve based TJ(PK) 150°C; variable depending conditions. Second breakdown pulse limits valid duty cycles provided TJ(PK)150°C, high case temperatures, thermal limitation will reduce power that handled values less than limitations imposed second breakdown.
VCE, Collector Emitter Voltage (Volts)
Specifications
IC(av) maximum VCEO maximum minimum Ptot 25°C Package TO-220 Type Part Number BU806
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31/05/05 V1.0
BU806
Darlington Power Transistor
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Darlington Power Transistor Fast Switching Darlington Transistor

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