Darlington Transistors General-purpose power amplifier frequency

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Darlington Transistors General-purpose power amplifier frequency

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2N6054/2N6056
Darlington Transistors
General-purpose power amplifier frequency switching applications. Collector-Emitter Saturation Voltage VCE(SAT) 2.0V (Maximum) 4.0A 3.0V (Maximum) 8.0A Monolithic construction with Built-in Base-Emitter Shunt Resistors.
Dimension Base Emitter Collector(Case)
Minimum 38.75 19.28 7.96 11.18 25.20 0.92 1.38 29.90 16.64 3.88 10.67
Maximum 39.96 22.23 9.28 12.19 26.67 1.09 1.62 30.40 17.30 4.36 11.18
Dimensions Millimetres
Maximum Ratings
Characteristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -Continuous -Peak Base Current Total Power Dissipation 25°C Derated above 25°C Operating Storage Junction Temperature Range Symbol VCEO VCBO VEBO TSTG 2N6056 2N6054 0.571 +200 W/°C Unit
Thermal Characteristics
Characteristic Thermal Resistance Junction Case Symbol Maximum 1.75 Unit °C/W
Page
21/04/04 V1.0
2N6054/2N6056
Darlington Transistors
Figure Power Derating
Electrical Characteristics 25°C unless otherwise noted)
Characteristic Characteristics Collector-Emitter Sustaining Voltage 100mA, Collector Cutoff Current (VCE 40V, Collector Cutoff Current (VCE 80V, VBE(off) 1.5V) (VCE 80V, VBE(off) 1.5V, 150°C) Emitter Cutoff Current (VEB 5.0V, Characteristics Current Gain 4.0A, 3.0V) Collector-Emitter Saturation Voltage 4.0A, 16mA) 8.0A, 80mA) Base-Emitter Voltage 3.0V) Base-Emitter Saturation Voltage 8.0A, 80mA) Dynamic Characteristics Output Capacitance (VCB 10V, 0.1MHz) Small-Signal Current Gain 3.0A, 3.0V, 1.0KHz) Pulse Test: Pulse Width 300µs, Duty Cycle 2.0% 2N6054 2N6056 18,000 2N6054, 2N6056 2N6054, 2N6056 2N6054, 2N6056 2N6054, 2N6056 VCEO(sus) ICEO ICEX IEBO Symbol Minimum Maximum Unit
VCE(sat) VBE(on) VBE(sat)
Page
31/05/05 V1.0
2N6054/2N6056
Darlington Transistors
2N6054
Current Gain
2N6056
Current Gain
Collector Saturation Region
Collector Saturation Region
"ON" Voltages
"ON" Voltages
Page
31/05/05 V1.0
2N6054/2N6056
Darlington Transistors
Switching Time Capacitances
Active Region Safe Operating Area (SOA) There limitation power handling ability transistor: average junction temperature second breakdown safe operating area curves indicate IC-VCE limits transistor that must observed reliable operation i.e., transistor must subjected greater dissipation than curves indicate. data curve base TJ(PK) 200°C; variable depending conditions. Second breakdown pulse limits valid duty cycles provided TJ(PK) 200°C, high case temperatures, thermal limitation will reduce power that handled values less than limitations imposed second breakdown.
Part Number
IC(av) maximum Order Mutliple VCEO maximum minimum Ptot 25°C Package Type Part Number 2N6056 2N6054
TO-3
Page
31/05/05 V1.0
2N6054/2N6056
Darlington Transistors
Notes:
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Disclaimer This data sheet contents (the "Information") belong Premier Farnell Group (the "Group") licensed licence granted other than information purposes connection with products which relates. licence intellectual property rights granted. Information subject change without notice replaces data sheets previously supplied. Information supplied believed accurate Group assumes responsibility accuracy completeness, error omission from made Users this data sheet should check themselves Information suitability products their purpose make assumptions based information included omitted. Liability loss damage resulting from reliance Information (including liability resulting from negligence where Group aware possibility such loss damage arising) excluded. This will operate limit restrict Group's liability death personal injury resulting from negligence. Multicomp registered trademark Group. Premier Farnell 2004.
Page
21/04/04 V1.0

Darlington Transistors General-purpose power amplifier frequency

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