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Data Sheet, Preliminary, Nov. 2007
Control integrated Power System (CIPOSTM)
IKCS12F60AA
http://www.infineon.com/cipos
Power Management Drives
CIPOSIKCS12F60AA
Revision History: Previous Version: Page
2007-12 Subjects (major changes since last revision) max. bootstrap capacitor
Rev.1.4
Authors: Hellmund, Scholz, Frank Edition 2007-07 Published Infineon Technologies 85579 Neubiberg, Germany Infineon Technologies 12/12/07. Rights Reserved. Attention please! information given this data sheet shall event regarded guarantee conditions characteristics ("Beschaffenheitsgarantie"). With respect examples hints given herein, typical values stated herein and/or information regarding application device, Infineon Technologies hereby disclaims warranties liabilities kind, including without limitation warranties non-infringement intellectual property rights third party. Information further information technology, delivery terms conditions prices please contact your nearest Infineon Technologies Office representatives (http://www.infineon.com). Warnings technical requirements components contain dangerous substances. information types question please contact your nearest Infineon Technologies Office representatives. Infineon Technologies Components only used life-support devices systems with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system, affect safety effectiveness that device system. Life support devices systems intended implanted human body, support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered. TrenchStop® registered trademark Infineon Technologies CIPOSTM, CoolMOSTM, CoolSETTM, DuoPackTM, EmConand thinQ!are trademarks Infineon Technologies
Preliminary Data Sheet
2/17
Rev. 1.4, Dec. 2007
CIPOSIKCS12F60AA Table Contents
CiPoSControl integrated Power System Features.4 Target Applications Description.4 System Configuration Internal Electrical Schematic.5 Assignment.6 Description /HIN1,2,3 /LIN1,2,3 (Low side high side control pins, (enable, ITRIP (Over-current detection function, VDD, (control side supply reference, 23). VB1,2,3 VS1,2,3 (High side supplies, VRU, VRV, (low side emitter, (positive input voltage, 10). Absolute Maximum Ratings Module Section IGBT Diode Section Control Section.9 Recommended Operation Conditions.9 Static Parameters Dynamic Parameters Integrated Components Circuit Typical Application.12 Test Circuits
Preliminary Data Sheet
3/17
Rev. 1.4, Dec. 2007
CIPOSIKCS12F60AA
CIPOSControl integrated Power System
Single In-Line Intelligent Power Module 3-bridge 600V 25°C
Features
Fully isolated Single In-Line molded module TrenchStop® IGBTs with lowest VCE(sat) Optimal adapted EmCondiode Integrated bootstrap diode capacitor Rugged gate driver technology with stability against transient negative voltage Temperature monitor over temperature shutdown Overcurrent shutdown Undervoltage lockout channels Matched propagation delay channels side emitter pins accessible phase current monitoring (open emitter) Cross-conduction prevention Lead-free terminal plating; RoHS compliant Qualified according JEDEC1 (high temperature stress tests 500h) target applications
Description
CiPoSmodule family offers chance integrating various power control components increase reliability, optimize size system costs. This SIL-IPM designed control motors variable speed drives applications like conditioning, compressors washing machines. package concept specially adapted power applications, which need extremely good thermal conduction electrical isolation, also EMI-save control overload protection. features Infineon TrenchStop® IGBTs EmCondiodes combined with optimized Infineon gate driver excellent electrical performance.
System Configuration
halfbridges with TrenchStop® IGBT FWEmCondiodes gate driver Bootstrap diodes high side supply Integrated 100nF bootstrap capacitance Temperature sensor, passive components adaptions Isolated heatsink Creepage distance 3.1mm
Target Applications
Washing machines Consumer Fans Consumer Compressors
J-STD-020 JESD-022 4/17 Rev. 1.4, Dec. 2007
Preliminary Data Sheet
CIPOSIKCS12F60AA Internal Electrical Schematic
(10)
Tr1, U-HS Tr3, V-HS Tr5, W-HS
Tr2, U-LS
Tr4, V-LS
Tr6, W-LS
(12) (13) (14)
CbsH1 Dbs1Dbs3 CbsH2 CbsH3
(22) /HIN1 (15) /HIN2 (16) /HIN3 (17) /LIN1 (18) /LIN2 (19) /LIN3 (20) ITRIP (21) (24)
/HIN1 /HIN2 /HIN3 /LIN1 /LIN2 /LIN3
Driver-IC
integrated components Table
(23)
Figure Internal Schematic
Preliminary Data Sheet
5/17
Rev. 1.4, Dec. 2007
CIPOSIKCS12F60AA Assignment
Number Name W,VS3 n.a. V,VS2 n.a. U,VS1 n.a. n.a. /HIN1 /HIN2 /HIN3 /LIN1 /LIN2 /LIN3 ITRIP Description high side floating supply voltage motor output high side floating supply offset voltage None high side floating supply voltage motor output high side floating supply offset voltage None high side floating supply voltage motor output high side floating supply offset voltage None positive input voltage None side emitter side emitter side emitter input gate driver high side input gate driver high side input gate driver high side input gate driver side input gate driver side input gate driver side input overcurrent shutdown module control supply module negative supply input logic enable, output temperature monitoring
Description
/HIN1,2,3 /LIN1,2,3 (Low side high side control pins, These pins active they responsible control integrated IGBT Schmitt-trigger input threshold them
such guarantee LSTTL CMOS compatibility down 3.3V controller outputs. Pull-up resistor about kOhm internally provided pre-bias inputs during supply start-up zener clamp provided protection purposes. Input schmitt-trigger noise filter provide beneficial noise rejection short input pulses. recommended proper work CiPoSnot provide input pulse-width lower than 1us. integrated gate drive provides additionally shoot through prevention capability which avoids simultaneous on-state gate drivers same (i.e. LO1, LO2, LO3).
Figure Input structure Preliminary Data Sheet 6/17 Rev. 1.4, Dec. 2007
CIPOSIKCS12F60AA
minimum deadtime insertion 325ns also provided, order reduce cross-conduction external power switches. (enable, signal applied controls directly output stages. outputs LOW, logic level. internal structure same Figure made exception switching levels Schmitt-Trigger, which here VEN,TH+ VEN,TH- 1.32 typical propagation delay time shuts down gate drivers power outputs, when supply voltage below VDDUV- 10.3 This prevents external power switches from critically gate voltage levels during on-state therefore from excessive power dissipation. VB1,2,3 VS1,2,3 (High side supplies, high side supply voltage. high side circuit float with respect following external high side power device emitter/source voltage. power consumption, floating driver stage supplied integrated bootstrap circuit connected VDD. This includes also
Figure Internal Circuit This also used reading temperature close gate drive Please refer section "Integrated Components" specification integrated parts. ITRIP (Over-current detection function, CiPoSprovides over-current detection function connecting ITRIP input with motor current feedback. ITRIP comparator threshold (typ 0.45V) referenced ground. input noise filter (typ: tITRIPMIN 225ns) prevents driver detect false over-current events. Over-current detection generates hard shut down outputs gate driver after shutdown propagation delay typically 690ns. fault-clear time typically 2ms. VDD, (control side supply reference, side supply provides power both input logic side output power stage. Input logic referenced ground well under-voltage detection circuit. under-voltage circuit enables device operate power when supply voltage least typical voltage VDDUV+ 11.9 least present.
Figure Input filter timing diagram integrated bootstrap capacitors each floating supply, which located very close gate drive circuit. under-voltage detection operates with rising supply threshold typical VBSUV+ 11.9 falling threshold VDDUV- 10.3 according Figure VS1,2,3 provide high robustness against negative voltage respect This ensures very stable designs even under rough conditions. VRU, VRV, (low side emitter, side emitters available current measurements each phase leg. recommended keep connection short possible order avoid unnecessary inductive voltage drops. (positive input voltage, high side IGBT connected voltage. recommended, that voltage does exceed
Preliminary Data Sheet
7/17
Rev. 1.4, Dec. 2007
CIPOSIKCS12F60AA Absolute Maximum Ratings
25°C, stated otherwise) Module Section Description Condition Symbol Storage temperature range Operating temperature control PCB1 Solder temperature Insulation test voltage Mounting torque Mounting pressure surface Creepage distance External bootstrap capacitor single capacitor charging,
Wave soldering, 1.6mm (0.063in.) from case
Value
Unit
Tstg TPCB Tsol
RMS, f=50Hz, =1min
VISOL
2500
screw washer Package flat mounting surface Cbs,ext
IGBT Diode Section Description Condition Symbol Collector-Emitter breakdown voltage output current
Value
Unit
VGE=0V, 0.25mA, 250ns 25°C,TvJ 150°C 80°C,TvJ 150°C limited TvJmax
15V,VDC 400V, 150°C
V(BR)CES
Repetitive peak collector current Short circuit withstand time
Ptot TvjI TvjD
Power dissipation IGBT Operating junction temperature range
25°C IGBT Diode
Monitored static operation with biased High-Side reduced 50V. Allowed number short circuits: <1000; time between short circuits: >1s. Preliminary Data Sheet 8/17 Rev. 1.4, Dec. 2007
CIPOSIKCS12F60AA
Description
Condition
Symbol
Value
Unit
Single IGBT thermal resistance, junction-case Single diode thermal resistance, junction-case Control Section Description Module supply voltage High side floating supply voltage High side floating supply offset voltage 250ns 250ns 500ns 500ns LIN, HIN, ITRIP
RthJC RthJCD
Condition
Symbol VS1,2,3
Value
Unit
VDD-VBS-50 VDD-VBS-6
Input voltage Operating junction temperature Max. switching frequency
TJ,IC fPWM
Recommended Operation Conditions
voltages absolute voltages referenced -Potential unless otherwise specified. Description Symbol Value High side floating supply offset voltage High side floating supply voltage High side output voltage (VHO side power supply Logic input voltages LIN,HIN,EN,ITRIP 12.5 12.5 17.5 17.5 Unit
Monitored 9/17 Rev. 1.4, Dec. 2007
Preliminary Data Sheet
CIPOSIKCS12F60AA Static Parameters
25°C, stated otherwise) Description Condition Symbol Collector-Emitter saturation voltage 15V, Iout 25°C 150°C Iout 25°C 150°C 600V, 250ns 25°C 150°C 15V, 300V, 150°C VCE(sat) 11.0 Value 1.32 12.0 10.3 10.1 2.15 2.05 1000 12.8 11.0 13.0 Unit
Diode forward voltage
Zero gate voltage collector current1
ICES
Short circuit collector current1 Logic input voltage (LIN,HIN) Logic input voltage (LIN,HIN) positive going threshold negative going threshold ITRIP positive going threshold ITRIP input hysteresis supply undervoltage positive going threshold supply undervoltage negative going threshold supply undervoltage lockout hysteresis Input clamp voltage (/HIN, /LIN, ITRIP) Quiescent supply current (VBx only) Quiescent supply current (VDD only) Input bias current Input bias current ITRIP Input bias current Input bias current Leakage current high side
IC(SC) VEN,TH+ VEN,THVIT,TH+ VIT,HYS VDDUV+ VBSUV+ VDDUVVBSUVVDDUVH VBSUVH VINCLAMP
float VITRIP 550V, Tj,IC 125°C
IQDD IIN+ IINIITRIP+ IEN+ ILVS
Allowed number short circuits: <1000; time between short circuits: >1s. 10/17 Rev. 1.4, Dec. 2007
Preliminary Data Sheet
CIPOSIKCS12F60AA Dynamic Parameters
25°C, stated otherwise) Description Condition Symbol Turn-on propagation delay High side side Turn-on rise time High side side Turn-off propagation delay High side side Turn-off fall time High side side Shutdown propagation delay ENABLE Shutdown propagation delay ITRIP Input filter time ITRIP Input filter time turn input filter time turn only Input filter time turn Input filter time turn Input filter time Fault clear time after ITRIP-fault Min. deadtime between side high side Deadtime gate drive circuit IGBT Turn-on Energy (includes reverse recovery diode) IGBT Turn-off Energy Iout 300V 25°C 150°C Iout 300V 25°C 150°C Iout 300V 25°C 150°C VLIN,HIN VITRIP VLIN,HIN Iout 300V Iout 300V VLIN,HIN VLIN,HIN Iout 300V Iout 300V VLIN,HIN VITRIP VITRIP VLIN,HIN td(on) td(off) tITRIP tITRIPmin tFILIN Value Unit
VHIN VHIN
tFILIN1 tFILIN2 tFILEN tFLTCLR DTPWM DTIC
Eoff
Diode recovery Energy
Erec
Preliminary Data Sheet
11/17
Rev. 1.4, Dec. 2007
CIPOSIKCS12F60AA Integrated Components
Description Condition Symbol1 Resistor (0.25 Resistor Resistor B-Constant (Negative Temperature Coefficient) Bootstrap diode forward voltage Capacitor Capacitor Bootstrap Capacitor TNTC 25°C TNTC 25°C IFDbs 100mA VFDbs CbsHx Value 4250 2.05 Unit
Circuit Typical Application
Symbols according Figure 12/17 Rev. 1.4, Dec. 2007
Preliminary Data Sheet
CIPOSIKCS12F60AA Characteristics
1000ns td(off) td(on)
1000ns td(off)
td(on)
SWITCHING TIMES
100ns
SWITCHING TIMES
100ns
10ns
10ns 25°C
50°C
75°C
100°C
125°C
COLLECTOR CURRENT Figure Typical switching times function collector current (inductive load, TJ=150°C, 300V, Dynamic test circuit Figure
TvJ, JUNCTION TEMPERATURE Figure Typical switching times function junction temperature (inductive load, 300V, 0/15V, Dynamic test circuit Figure
SWITCHING ENERGY LOSSES
SWITCHING ENERGY LOSSES
1.25mJ
0.15mJ
Eoff
1.00mJ
0.75mJ
0.10mJ
0.50mJ
Eoff
0.05mJ
Erec
0.25mJ
Erec
0.00mJ 25°C 50°C 75°C 100°C 125°C
0.00mJ
COLLECTOR CURRENT Figure Typical switching energy losses function collector current (inductive load, 150°C, 300V, 0/15V Dynamic test circuit Figure
TvJ, JUNCTION TEMPERATURE Figure Typical switching energy losses function junction temperature (inductive load, 300V, 0/15V, Dynamic test circuit Figure
Preliminary Data Sheet
13/17
Rev. 1.4, Dec. 2007
CIPOSIKCS12F60AA
VGE=25°C 125°C 150°C
VEN, VOLTAGE
COLLECTOR CURRENT
75°C 100°C
10.3V
25°C
50°C
CASE TEMPERATURE Figure Typical voltage function case temperature
VCE, COLLECTOR EMITTER VOLTAGE Figure Typical output characteristic IGBT function collector emitter voltage (VDD 15V)
ZthJC, TRANSIENT THERMAL RESISTANCE
Single Pulse IGBT Diode
forward CURRENT
VGE=25°C 125°C 150°C
100ns
10µs 100µs 10ms 100ms
forward VOLTAGE Figure Typical diode forward current function forward voltage
PULSE WIDTH Figure Diode transient thermal impedance function pulse width (D=tP/T)
Preliminary Data Sheet
14/17
Rev. 1.4, Dec. 2007
CIPOSIKCS12F60AA Test Circuits Parameter Definiton
Erec
Erec
Figure Dynamic test circuit Leakage inductance =180nH Stray capacitance =39pF
Figure Definition diodes switching characteristics
Figure Definition Enable ITIRP propagation delay
LIN1,2,3 HIN1,2,3
2.1V 0.9V td(off) td(on) tEoff
Eoff
iCU, iCV, vCEU, vCEV, vCEW
tEon
Eoff
vCEx
vCEx
Figure Switching times definition switching energy definition
Preliminary Data Sheet
15/17
Rev. 1.4, Dec. 2007
CIPOSIKCS12F60AA
tFILIN
tFILIN
high
Figure Short Pulse suppression
Preliminary Data Sheet
16/17
Rev. 1.4, Dec. 2007
CIPOSIKCS12F60AA Package Outline IKCS12F60AA
Description
Condition
Symbol
Value
Unit
Weight
Preliminary Data Sheet
17/17
Rev. 1.4, Dec. 2007
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