HiPerFRED High Performance Fast Recovery Diode Loss Soft Recovery
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200QB
HiPerFRED
High Performance Fast Recovery Diode Loss Soft Recovery Common Cathode
Part number (Marking product)
200QB
Features Advantages:
Planar passivated chips Very leakage current Very short recovery time Improved thermal behaviour Very Irm-values Very soft recovery behaviour Avalanche voltage rated reliable operation Soft reverse recovery EMI/RFI reduces: Power dissipation within diode Turn-on loss commutating switch
Applications:
Antiparallel diode high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers switch mode power supplies (SMPS) Uninterruptible power supplies (UPS)
Package:
TO-3P Industry standard outline compatible with TO-247 Epoxy meets 94V-0 RoHS compliant
Ratings Symbol VRRM Definition
max. repetitive reverse voltage reverse current
Conditions
min.
typ.
max. 1.34 1.63 1.06 1.39 0.70 10.5 0.95
Unit
forward voltage
thJC Ptot
average forward current threshold voltage slope resistance
rectangular,
power loss calculation only
thermal resistance junction case virtual junction temperature total power dissipation max. forward surge current max. reverse recovery current
Hz), sine -diF A/µs typ.;
reverse recovery time
junction capacitance non-repetitive avalanche energy repetitive avalanche current
0614
IXYS reserves right change limits, conditions dimensions.
Data according 60747and diode unless otherwise specified
2006 IXYS rights reserved
200QB
Ratings Symbol thCH Weight Definition
current thermal resistance case heatsink mounting torque mounting force with clip storage temperature
Conditions pin*
min.
typ.
max.
Unit
0.25
Irms typically limited pin-to-chip resistance; current capability chip. case common cathode/anode configuration non-isolated backside, whole current capability used connecting backside.
Outlines TO-3P
0614
IXYS reserves right change limits, conditions dimensions.
Data according 60747and diode unless otherwise specified
2006 IXYS rights reserved
200QB
25°C A/µs 1000 -diF/dt A/µs 1000 -diF/dt 150°C 125°C 125°C 125°C
Fig. Forward current
Fig. Typ. reverse recovery charge versus -diF/dt
125°C
Fig. Typ. peak reverse current versus -diF/dt
125°C A/µs 1000 diF/dt
diF/dt A/µs
A/µs 1000 -diF/dt
Fig. Dynamic parameters versus
Fig. Typ. recovery time -diF/dt
Fig. Typ. peak forward voltage versus diF/dt
Constants ZthJC calculation: Rthi
[K/W]
ZthJC
0.505 0.195 0.250
0.005 0.0003 0.041
0.01
0.001 0.00001
DPG60C300QB
0.0001
0.001
0.01
Fig. Transient thermal impedance junction case
0614
IXYS reserves right change limits, conditions dimensions.
Data according 60747and diode unless otherwise specified
2006 IXYS rights reserved
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