BPV22F high speed high sensitive photodiode plastic package with spher

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BPV22F high speed high sensitive photodiode plastic package with spher

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BPV22F
BPV22F high speed high sensitive photodiode plastic package with spherical side view lens. epoxy package itself filter, spectrally matched GaAs GaAs/GaAlAs emitters nm). Lens radius chip position perfectly matched chip size, giving high sensitivity without compromising viewing angle. comparison with flat packages spherical lens package achieves sensitivity improvement
8633
Features
Large radiant sensitive area Wide viewing angle Improved sensitivity Fast response times Plastic package with filter Filter designed transmission Lead (Pb)-free component Component accordance RoHS 2002/95/EC WEEE 2002/96/EC
Applications
Infrared remote control free transmission systems combination with emitter diodes (TSU.- TSI.-Series).
Absolute Maximum Ratings
Tamb unless otherwise specified Parameter Reverse Voltage Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/ Ambient Tamb Test condition Symbol Tamb Tstg RthJA Value Unit
Document Number 81508 Rev. 1.4, 13-Nov-06
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BPV22F
Vishay Semiconductors Electrical Characteristics
Tamb unless otherwise specified Parameter Forward Voltage Breakdown Voltage Reverse Dark Current Diode capacitance Serial Resistance Test condition MHz, Symbol V(BR) Typ. Unit
Optical Characteristics
Tamb unless otherwise specified Parameter Open Circuit Voltage Temp. Coefficient Short Circuit Current Reverse Light Current Temp. Coefficient Absolute Spectral Sensitivity Angle Half Sensitivity Wavelength Peak Sensitivity Range Spectral Bandwidth Quantum Efficiency Noise Equivalent Power Detectivity Rise Time Fall Time Cut-Off Frequency Test condition mW/cm2, mW/cm2, mW/cm
Symbol TKVo TKIra
Typ.
Unit mV/K
mW/cm mW/cm2,
0.35 1050 10-14 1012
cmHz/W
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Document Number 81508 Rev. 1.4, 13-Nov-06
BPV22F
Vishay Semiconductors Typical Characteristics
Tamb unless otherwise specified
Reverse Light Current (µA) mW/cm2 mW/cm2 mW/cm2 mW/cm2 0.05 mW/cm2 0.02 mW/cm2
8412
Diode Capacitance (pF)
8430
Reverse Voltage
Reverse Voltage
Figure Reverse Dark Current Ambient Temperature
Figure Reverse Light Current Reverse Voltage
Relative Reverse Light Current
Diode Capacitance (pF)
Tamb Ambient Temperature (°C)
948407
8409
Reverse Voltage
Figure Relative Reverse Light Current Ambient Temperature
Figure Diode Capacitance Reverse Voltage
Relative Spectral Sensitivity
1000
Reverse Light Current (µA)
0.01
8411
1050
1150
Irradiance (mW/cm2)
8408
Wavelength (nm)
Figure Reverse Light Current Irradiance
Figure Relative Spectral Sensitivity Wavelength
Document Number 81508 Rev. 1.4, 13-Nov-06
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BPV22F
Relative Sensitivity
8413
Figure Relative Radiant Sensitivity Angular Displacement
Package Dimensions
1475
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Document Number 81508 Rev. 1.4, 13-Nov-06
BPV22F
Vishay Semiconductors Ozone Depleting Substances Policy Statement
policy Vishay Semiconductor GmbH Meet present future national international statutory requirements. Regularly continuously improve performance products, processes, distribution operating systems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances (ODSs). Montreal Protocol (1987) London Amendments (1990) intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. Vishay Semiconductor GmbH been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency (EPA) Council Decision 88/540/EEC 91/690/EEC Annex (transitional substances) respectively. Vishay Semiconductor GmbH certify that semiconductors manufactured with ozone depleting substances contain such substances.
reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer Vishay Semiconductors products unintended unauthorized application, buyer shall indemnify Vishay Semiconductors against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 81508 Rev. 1.4, 13-Nov-06
www.vishay.com
Legal Disclaimer Notice
Vishay
Notice
Specifications products displayed herein subject change without notice. Vishay Intertechnology, Inc., anyone behalf, assumes responsibility liability errors inaccuracies. Information contained herein intended provide product description only. license, express implied, estoppel otherwise, intellectual property rights granted this document. Except provided Vishay's terms conditions sale such products, Vishay assumes liability whatsoever, disclaims express implied warranty, relating sale and/or Vishay products including liability warranties relating fitness particular purpose, merchantability, infringement patent, copyright, other intellectual property right. products shown herein designed medical, life-saving, life-sustaining applications. Customers using selling these products such applications their risk agree fully indemnify Vishay damages resulting from such improper sale.
Document Number: 91000 Revision: 08-Apr-05
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BPV22F high speed high sensitive photodiode plastic package with spher

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