(3.3 Linear Wireless Data Power Amplifier (2.3 2.7)GHz Operation

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(3.3 Linear Wireless Data Power Amplifier (2.3 2.7)GHz Operation

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ALM-42216
(3.3 Linear Wireless Data Power Amplifier (2.3 2.7)GHz Operation
Avago Technologies' ALM-42216 fully-matched Power amplifier module (2.3-2.7)GHz band. High linear output power 3.3V achieved through Avago Technologies' proprietary 0.25um GaAs Enhancement-mode pHEMT process. housed miniature 1.1mm MCOB module. includes shutdown switchable gain functions. detector also included onchip. compact footprint profile coupled with high gain high efficiency make ALM-42216 ideal choice power amplifier IEEE 802.16 (Wimax) applications.
Features
High Efficiency 17.4% 3.3V supply voltage High gain 30dB High linearity performance 23.5dBm 2.5% rate OFDMA). Broadband Fully-matched input output impedances >45dBc harmonic attenuation Built-in detector shutdown switches Switchable gain attenuation using single CMOS compatible switch GaAs E-pHEMT Technology[1] cost small package size: Useable supplies higher output power
Applications
High linearity amplifier IEEE 802.16 mobile fixed terminal amplifier amplifier
Component Image
MCOB
Specifications
2.5GHz; 3.3V, Iqtotal=240 (typ) Gain 23.5dBm linear Pout (2.5% EVM, 64QAM OFDMA) 25.5dBm linear Pout (2.5% EVM, 64QAM OFDMA) Vdd=5V P1dB 30dBm Detector range 10dB (0.5V 2.5V) switchable gain attenuation Shutdown current 20uA
Notes: Enhancement mode technology employs positive Vgs, thereby eliminating need negative gate voltage associated with conventional depletion mode devices.
42216 WWYY XXXX View Configuration
Notes: Package marking provides orientation identification "42216" Device part number "WWYY" Work week Year "XXXX" Assembly number
Attention: Observe precautions handling electrostatic sensitive devices. Machine Model Human Body Model Refer Avago Application Note A004R: Electrostatic Discharge, Damage Control.
View
Absolute Maximum Rating TA=25°C
Symbol
Vdd, Vddbias Pin,max Pdiss TSTG
Parameter
Supply voltages, bias supply voltage Control Voltage Input Power Total Power Dissipation Junction Temperature Storage Temperature
Units
Absolute Max.
(Vdd)
Thermal Resistance [2,3]
(Vdd 3.3V, Id=240mA), °C/W
Notes: Operation this device excess these limits cause permanent damage. Thermal resistance measured using Infra-Red Measurement Technique. Board temperature (TB) derate device power 30mW rise Board (package belly) temperature.
Electrical Specifications
=3.3V, Iqtotal 240mA, performance GHz, IEEE 802.16e 64-QAM, rate FEC, OFDMA operation unless otherwise stated. Vbyp Symbol
Iqtotal freq Gain OP1dB Plin Ilintotal Atten Vdet DetR
Parameter Test Condition
Supply Voltage Quiescent Supply Current (normal high gain mode) Quiescent Supply Current (bypass mode, Vbyp 3.3V) Input Frequency Range Control voltage required Iqtotal=240mA Gain Output Power Gain Compression Linear Output power 2.5%EVM (normal gain mode) Total current draw Plin level Input Return Loss, source Output Return Loss, load Reverse Isolation Second harmonic attenuation Gain attenuation bypass mode Detector output voltage Plin Detector dynamic range Stability under load VSWR (all phase)
Units
Min.
Typ.
Max.
22.0 23.5 -17.5
31.5
Notes: Iqtotal defined quiescent currents flowing into pins Vdd1, Vdd2, Vdd3, Vddbias. Current measured during portion amplifier using downlink ratio, IEEE 802.16e modulation.
Product Consistency Distribution Charts[1]
Figure Linear Pout Distribution (normal gain mode)
Figure Gain Distribution (normal gain mode)
Figure Distribution Iq(total)=240mA
Figure Gain Distribution (bypass mode)
Notes: Distribution data sample size samples taken from different wafers different lots. Future wafers allocated this product have nominal values anywhere between upper lower limits.
Figure Demo board circuit ALM-42216 module
Notes: 0402 ceramic chip capacitor 0.1uF 0402 ceramic chip capacitor 100pF 0402 ceramic chip capacitor 0805 ceramic chip capacitor
Vdd1
Vdd2
Vdd3
RFinput
MATCH MATCH MATCH MATCH
RFoutput
Bypass SWITCH Bias
Vbyp Figure Application circuit demoboard
Vddbias
Vdet
Notes: normal gain mode operation, Vbyp bias that used bias conditions internal gain stages Typical quiescent current distribution with Vdd1=Vdd2=Vdd3 3.3V, Vbyp 2.45V Idd1 Idd2 Idd3 I_Vddbias 17mA Bypass mode enabled setting Vbyp 3.3V. This condition overrides normal high gain mode operation bypasses first gain stage, regardless voltage pin. Modulated signal measurements made with Agilent 89600 Agilent ESG4438C signal generator with IEEE 802.16e option using following test conditions Signal format IEEE 802.16e OFDMA, rate Modulation 64-QAM Numher Subcarriers Modulation bandwidth Downlink ratio Residual distortion signal generator (0.6-0.8)%. This distortion included overall data datasheet. Typical operating voltages currents Normal gain mode Vdd1 Vdd2 Vdd3 Vddbias 3.3V. 2.45V. Vbyp Iqtotal Bypass mode Vdd1 Vdd2 Vdd3 Vddbias 3.3V. 2.45V. Vbyp 3.3V. Iqtotal
Unless otherwise stated, measurements made Vdd=+3.3V, Iqtotal=240mA. (typ) 2.45V
25deg -30deg Freq 25deg -30deg Freq
Figure Small-signal performance high-gain mode, 3.3V
S21, S11,
S21, S11,
Figure Small-signal performance high-gain mode,
25deg -30deg Freq
25deg -30deg Freq
Figure Small-signal performance bypass mode, 3.3V
S21, S11,
Figure Small-signal performance bypass mode,
S21, S11,
Gain_2.3GHz Gain_2.5GHz Gain_2.7GHz Idd_2.3GHz Idd_2.5GHz Idd_2.7GHz Pout (dBm)
1000
1100 1000 Gain_2.3GHz Gain_2.5GHz Gain_2.7GHz Idd_2.3GHz Idd_2.5GHz Idd_2.7GHz Pout (dBm)
Idd_total (mA)
Figure Gain Pout 25°C high-gain mode, 3.3V
Figure Gain Pout 25°C high-gain mode,
Gain_2.3GHz Gain_2.5GHz Gain_2.7GHz Idd_2.3GHz Idd_2.5GHz Idd_2.7GHz Pout (dBm)
1000
Gain_2.3GHz Gain_2.5GHz Gain_2.7GHz Idd_2.3GHz Idd_2.5GHz Idd_2.7GHz Pout (dBm)
1200 1100 1000
Idd_total (mA)
Figure Gain Pout -30°C high-gain mode, 3.3V
Figure Gain Pout -30°C high-gain mode,
1000 Gain_2.3GHz Gain_2.5GHz Gain_2.7GHz Idd_2.3GHz Idd_2.5GHz Idd_2.7GHz Pout (dBm)
Gain_2.3GHz Gain_2.5GHz Gain_2.7GHz Idd_2.3GHz Idd_2.5GHz Idd_2.7GHz Pout (dBm)
1100 1000
Idd_total (mA)
Figure Gain Pout 85°C high-gain mode, 3.3V
Figure Gain Pout 85°C high-gain mode,
Idd_total (mA)
Gain (dB)
Gain (dB)
Idd_total (mA)
Gain (dB)
Gain (dB)
Idd_total (mA)
Gain (dB)
Gain (dB)
Idd_total (mA)
Pout (dBm)
Figure Pout 25°C High-gain mode, 3.3V
Figure Pout 25°C High-gain mode,
Idd_total (mA)
Pout (dBm)
Pout (dBm) Figure Pout -30°C High-gain mode,
Figure Pout -30°C High-gain mode, 3.3V
Idd_total (mA)
Pout (dBm) Figure Pout 85°C High-gain mode, 3.3V
Pout (dBm) Figure Pout 85°C High-gain mode,
Idd_total (mA)
EVM_2.3GHz EVM_2.5GHz EVM_2.7GHz Idd_2.3GHz Idd_2.5GHz Idd_2.7GHz
EVM_2.3GHz EVM_2.5GHz EVM_2.7GHz Idd_2.3GHz Idd_2.5GHz Idd_2.7GHz
Idd_total (mA)
EVM_2.3GHz EVM_2.5GHz EVM_2.7GHz Idd_2.3GHz Idd_2.5GHz Idd_2.7GHz
EVM_2.3GHz EVM_2.5GHz EVM_2.7GHz Idd_2.3GHz Idd_2.5GHz Idd_2.7GHz
Idd_total (mA)
EVM_2.3GHz EVM_2.5GHz EVM_2.7GHz Idd_2.3GHz Idd_2.5GHz Idd_2.7GHz
Pout (dBm) EVM_2.3GHz EVM_2.5GHz EVM_2.7GHz Idd_2.3GHz Idd_2.5GHz Idd_2.7GHz
Figure Spectral mask Pout 22.2 dBm, Freq= 2.5GHz, normal gain mode, 3.3V, Temperature 25°C 3.25 3.00 2.75 2.50 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50
Figure Spectral mask Pout 24.7 meeting specs, Freq=2.5GHz, normal gain mode, Temperature 25°C 4.50 4.25 4.00 3.75 3.50 3.25 3.00 2.75 2.50 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50
VDet
Vdet_2.3GHz_25C Vdet_2.5GHz_25C Vdet_2.7GHz_25C Pout (dBm)
VDet
Vdet_2.3GHz_25C Vdet_2.5GHz_25C Vdet_2.7GHz_25C Pout (dBm)
Figure Detector Pout, normal gain mode, 3.3V, Temperature 25°C
Figure Detector Pout, normal gain mode, Temperature 25°C
View Figure Package Drawing dimensions
View
Bottom View
Layout Stencil Design
Land Pattern (Top View)
Stencil Outline
Combined Stencil Layout
dimensions
Figure board stencil design
Package Dimensions
REEL USER FEED DIRECTION
CARRIER TAPE USER FEED DIRECTION COVER TAPE
42216 WWYY XXXX
42216 WWYY XXXX
42216 WWYY XXXX
VIEW
VIEW
Tape Dimensions
Part Number Ordering Information
Part Number
ALM-42216-BLKG ALM-42216-TR1G ALM-42216-TR2G
Devices
1000 3000
Container
Antistatic Reel Reel
Reel Dimension inch
FRONT
BACK
DETAIL
RECYCLE LOGO
FRONT VIEW
R10.65 R5.2 Slot hole
10.9* +1.5* -0.0
FRONT
BACK
Slot hole EMBOSSED RIBS RAISED: 0.25mm, WIDTH: 1.25mm BACK VIEW 14.4* MAX.
Reel Dimension inch
EMBOSSED LETTERING 16.0mm HEIGHT MIN. 0.4mm THICK. 12MM
DATE CODE
EMBOSSED LETTERING 7.5mm HEIGHT EMBOSSED LINE (2x) 89.0mm LENGTH LINES 147.0mm AWAY FROM CENTER POINT LOGO RECYCLE LOGO DETAIL FRONT VIEW
11.9-15.4** +2.0* 12.4 -0.0
Detail
R19.0±0.5 BACK VIEW
SLOT 5.0±0.5(3x)
18.4 MAX.*
product information complete list distributors, please site:
www.avagotech.com
Avago, Avago Technologies, logo trademarks Avago Technologies Limited United States other countries. Data subject change. Copyright 2005-2008 Avago Technologies Limited. rights reserved. AV02-1191EN 2008
EMBOSSED LETTERING 7.5mm HEIGHT
+0.5 -0.2 20.2(MIN.)

(3.3 Linear Wireless Data Power Amplifier (2.3 2.7)GHz Operation

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